Refractory self-aligned gate technology for GaAs microwave FETs and MMICS

1987 ◽  
Vol 23 (20) ◽  
pp. 1073 ◽  
Author(s):  
A.E. Geissberger ◽  
R.A. Sadler ◽  
E.L. Griffin ◽  
I.J. Bahl ◽  
M.L. Balzan
Keyword(s):  
Microwave Fets

Full RF characterization for extracting the small-signal equivalent circuit in microwave FETs

1996 ◽  
Vol 44 (12) ◽  
pp. 2625-2633 ◽  
Author(s):  
J.A. Reynoso-Hernandez ◽  
F.E. Rangel-Patino ◽  
J. Perdomo
Keyword(s):  
Equivalent Circuit ◽  
Small Signal ◽  
Microwave Fets

Small-Versus Large-Signal Extraction of Charge Models of Microwave FETs

2014 ◽  
Vol 24 (6) ◽  
pp. 394-396 ◽  
Author(s):  
Gustavo Avolio ◽  
Antonio Raffo ◽  
Iltcho Angelov ◽  
Giovanni Crupi ◽  
Alina Caddemi ◽  
...  
Keyword(s):  
Signal Extraction ◽  
Large Signal ◽  
Microwave Fets

Problem of fabrication of diamond-based high-power microwave FETs

2014 ◽  
Vol 59 (4) ◽  
pp. 379-383
Author(s):  
G. Z. Garber ◽  
A. A. Dorofeev ◽  
A. M. Zubkov ◽  
Yu. V. Kolkovskii ◽  
Yu. A. Kontsevoi ◽  
...  
Keyword(s):  
High Power ◽  
High Power Microwave ◽  
Microwave Fets ◽  
Power Microwave

Trapping effects in GaN and SiC microwave FETs

2002 ◽  
Vol 90 (6) ◽  
pp. 1048-1058 ◽  
Author(s):  
S.C. Binari ◽  
P.B. Klein ◽  
T.E. Kazior
Keyword(s):  
Microwave Fets ◽  
Trapping Effects
Sign in / Sign up

Export Citation Format

Share Document