microwave fets
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scholarly journals Embedded gate CVD MoS2 microwave FETs

2017 ◽  
Vol 1 (1) ◽  
Author(s):  
Atresh Sanne ◽  
Saungeun Park ◽  
Rudresh Ghosh ◽  
Maruthi Nagavalli Yogeesh ◽  
Chison Liu ◽  
...  
Keyword(s):  
Microwave Fets

Evolution of surface morphology of alloyed AuGe/Ni/Au ohmic contacts to GaAs microwave FETs

2015 ◽  
Vol 30 ◽  
pp. 62-74 ◽  
Author(s):  
G. Sai Saravanan ◽  
K. Mahadeva Bhat ◽  
S. Dhamodaran ◽  
A.P. Pathak ◽  
R. Muralidharan ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Ohmic Contacts ◽  
Microwave Fets

Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies

Carbon ◽  
2015 ◽  
Vol 81 ◽  
pp. 96-104 ◽  
Author(s):  
M. Winters ◽  
O. Habibpour ◽  
I.G. Ivanov ◽  
J. Hassan ◽  
E. Janzén ◽  
...  
Keyword(s):  
Electron Transport ◽  
Material Characterization ◽  
Transport Studies ◽  
Microwave Fets

Small-Versus Large-Signal Extraction of Charge Models of Microwave FETs

2014 ◽  
Vol 24 (6) ◽  
pp. 394-396 ◽  
Author(s):  
Gustavo Avolio ◽  
Antonio Raffo ◽  
Iltcho Angelov ◽  
Giovanni Crupi ◽  
Alina Caddemi ◽  
...  
Keyword(s):  
Signal Extraction ◽  
Large Signal ◽  
Microwave Fets

Problem of fabrication of diamond-based high-power microwave FETs

2014 ◽  
Vol 59 (4) ◽  
pp. 379-383
Author(s):  
G. Z. Garber ◽  
A. A. Dorofeev ◽  
A. M. Zubkov ◽  
Yu. V. Kolkovskii ◽  
Yu. A. Kontsevoi ◽  
...  
Keyword(s):  
High Power ◽  
High Power Microwave ◽  
Microwave Fets ◽  
Power Microwave

Straightforward modeling of dynamic I-V characteristics for microwave FETs

2013 ◽  
Vol 24 (1) ◽  
pp. 109-116 ◽  
Author(s):  
Gustavo Avolio ◽  
Dominique M. M.-P. Schreurs ◽  
Antonio Raffo ◽  
Giovanni Crupi ◽  
Alina Caddemi ◽  
...  
Keyword(s):  
Microwave Fets

scholarly journals Bias Dependant Noise Wave Modelling Procedure of Microwave Fets

2012 ◽  
Vol 63 (2) ◽  
pp. 120-124
Author(s):  
Olivera Pronić-Rančić ◽  
Zlatica Marinković ◽  
Vera Marković
Keyword(s):  
Error Correction ◽  
Microwave Field ◽  
Field Effect Transistors ◽  
Wave Model ◽  
Model Accuracy ◽  
Wave Modelling ◽  
Modelling Procedure ◽  
Model Equations ◽  
Microwave Fets ◽  
Modelling Approach

Bias Dependant Noise Wave Modelling Procedure of Microwave Fets A new noise modelling procedure of microwave field-effect transistors (FETs) valid for various bias conditions is suggested in this paper. The proposed procedure is based on transistor noise wave model. With the aim to improve the noise wave model accuracy, the modification of the model is done by inclusion of the error correction functions into the noise wave model equations. It leads to significant reduction of deviations between measured and simulated noise parameters and therefore better noise prediction is achieved. It is also shown that once determined error correction functions can be applied for accurate noise modelling of the same device for various bias conditions. The validity of the presented noise modelling approach is exemplified by modelling of a specific MESFET device in packaged form.

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