Experimental modelling of microwave FETs based on ‘hot’ S-parameters

1991 ◽  
Vol 74 (3) ◽  
pp. 219-224
Author(s):  
G. Kompa
Keyword(s):  
Experimental Modelling ◽  
S Parameters ◽  
Microwave Fets

Marginal RF Gain Investigation and Root Cause Determination

2013 ◽  
Author(s):  
Keith Harber ◽  
Steve Brockett
Keyword(s):  
Radio Frequency ◽  
Failure Analysis ◽  
Power Amplifier ◽  
Physical Analysis ◽  
Root Cause ◽  
S Parameter ◽  
Mode Of Operation ◽  
S Parameters

Abstract This paper outlines the failure analysis of a Radio Frequency only (RF-only) failure on a complex Multimode Multiband Power Amplifier (MMPA) module, where slightly lower gain was observed in one mode of operation. 2 port S-parameter information was collected and utilized to help localize the circuitry causing the issue. A slight DC electrical difference was observed, and simulation was utilized to confirm that difference was causing the observed S-parameters. Physical analysis uncovered a very visible cause for the RF-only failure.

scholarly journals Parasitic Loop Inductances Reduction in the PCB Layout in GaN-Based Power Converters Using S-Parameters and EM Simulations

Energies ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1495
Author(s):  
Loris Pace ◽  
Nadir Idir ◽  
Thierry Duquesne ◽  
Jean-Claude De Jaeger
Keyword(s):  
High Frequency ◽  
Printed Circuit Board ◽  
Power Converters ◽  
Calibration Procedure ◽  
Circuit Board ◽  
Design System ◽  
Switching Speed ◽  
Parasitic Inductance ◽  
Frequency Converters ◽  
S Parameters

Due to the high switching speed of Gallium Nitride (GaN) transistors, parasitic inductances have significant impacts on power losses and electromagnetic interferences (EMI) in GaN-based power converters. Thus, the proper design of high-frequency converters in a simulation tool requires accurate electromagnetic (EM) modeling of the commutation loops. This work proposes an EM modeling of the parasitic inductance of a GaN-based commutation cell on a printed circuit board (PCB) using Advanced Design System (ADS®) software. Two different PCB designs of the commutation loop, lateral (single-sided) and vertical (double-sided) are characterized in terms of parasitic inductance contribution. An experimental approach based on S-parameters, the Cold FET technique and a specific calibration procedure is developed to obtain reference values for comparison with the proposed models. First, lateral and vertical PCB loop inductances are extracted. Then, the whole commutation loop inductances including the packaging of the GaN transistors are determined by developing an EM model of the device’s internal parasitic. The switching waveforms of the GaN transistors in a 1 MHz DC/DC converter are given for the different commutation loop designs. Finally, a discussion is proposed on the presented results and the development of advanced tools for high-frequency GaN-based power electronics design.

scholarly journals Evaluation of non-thermal microwave effects on bovine lens by measuring S-parameters induced by variations in dielectric coefficient

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Junqing Lan ◽  
Xiaofeng Sun ◽  
Huacheng Zhu ◽  
Xiaoren Cao ◽  
Lan Yang ◽  
...  
Keyword(s):  
Bovine Lens ◽  
S Parameters ◽  
Dielectric Coefficient ◽  
Microwave Effects

Numerical and experimental modelling of seepage in homogeneous earth dam with combined drain

2021 ◽  
pp. 1-11
Author(s):  
Azam Kouhpeyma ◽  
Fouad Kilanehei ◽  
Mahmood Hassanlourad ◽  
Reza Ziaie-Moayed
Keyword(s):  
Earth Dam ◽  
Experimental Modelling
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