Fabrication of a new type of field-effect transistor using neutralisation of shallow donors by atomic hydrogen in n-GaAs (Si)

1987 ◽  
Vol 23 (16) ◽  
pp. 841 ◽  
Author(s):  
E. Constant ◽  
N. Caglio ◽  
J. Chevallier ◽  
J.C. Pesant
Keyword(s):  
Atomic Hydrogen ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Shallow Donors ◽  
New Type ◽  
Effect Transistor

New Type of Ion-Sensitive Field-Effect Transistor with Sensing Region Separate from Gate-Controlled Region

2017 ◽  
Vol 17 (11) ◽  
pp. 8280-8284
Author(s):  
Ryoongbin Lee ◽  
Dae Woong Kwon ◽  
Sihyun Kim ◽  
Hyun-Sun Mo ◽  
Dae Hwan Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
New Type ◽  
Effect Transistor

A new type of halide-ion biosensor using halorhodopsin and an ion-sensitive field-effect transistor

1993 ◽  
Vol 14 (1-3) ◽  
pp. 659-660 ◽  
Author(s):  
Izumi Kubo ◽  
Atsushi Seki ◽  
Hiroaki Tomioka ◽  
Hiroyuki Sasabe
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
New Type ◽  
Effect Transistor

High-performance Hg2+ FET-type sensors based on reduced graphene oxide–polyfuran nanohybrids

The Analyst ◽  
2014 ◽  
Vol 139 (16) ◽  
pp. 3852-3855 ◽  
Author(s):  
Jin Wook Park ◽  
Seon Joo Park ◽  
Oh Seok Kwon ◽  
Choonghyen Lee ◽  
Jyongsik Jang
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Reduced Graphene ◽  
New Type ◽  
Effect Transistor

A new type of field-effect transistor (FET) sensor, based on reduced graphene oxide (rGO)–polyfuran (PF) nanohybrids, was strategically developed.

Preparations and Evaluations of Magnetoelectric Thin Films for Josephson Field Effect Transistor

2004 ◽  
Vol 811 ◽  
Author(s):  
Nobuyuki Iwata ◽  
Koji Matsuo ◽  
Noriaki Ootsuka ◽  
Hiroshi Yamamoto
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electronic Devices ◽  
Gate Insulator ◽  
Induced Magnetic Field ◽  
Multilayered Films ◽  
New Type ◽  
Effect Transistor

ABSTRACTWe proposed the magnetoelectric (ME) effect as a new function of oxides electronic devices. The ME effect is characterized by the appearance of an induced magnetization with electric field applied and also is true in the opposite way. As one of the oxides devices we proposed a new type of Josephson field effect transistor (JFET) as adopting the ME materials to a gate insulator. In such the device, considering the Fraunhofer pattern, large IC modulation was expected by the induced magnetic field. Representative ME material, Cr2O3 films were deposited on Josephson junctions which were formed bygrain boundaries in YBa2Cu3OX (YBCO) films grown on MgO substrates. The multilayered films, Cr2O3 /YBCO and Cr2O3 / Y2O3 / YBCO were studied as the model of JFET.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor
Sign in / Sign up

Export Citation Format

Share Document