High-performance Hg2+ FET-type sensors based on reduced graphene oxide–polyfuran nanohybrids
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New Type
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A new type of field-effect transistor (FET) sensor, based on reduced graphene oxide (rGO)–polyfuran (PF) nanohybrids, was strategically developed.
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2018 ◽
Vol 318
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pp. 012045
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Keyword(s):
2014 ◽
Vol 53
(5S1)
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pp. 05FD05
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Keyword(s):
2016 ◽
Vol 88
(6)
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pp. 2994-2998
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