12.5‐GHz direct modulation bandwidth of vapor phase regrown 1.3‐μm InGaAsP buried heterostructure lasers

1985 ◽  
Vol 46 (4) ◽  
pp. 344-346 ◽  
Author(s):  
C. B. Su ◽  
V. Lanzisera ◽  
W. Powazinik ◽  
E. Meland ◽  
R. Olshansky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Modulation Bandwidth ◽  
Direct Modulation ◽  
Buried Heterostructure

15-GHz direct-modulation bandwidth of vapor phase regrown 1.3-μm InGaAsP buried heterostructure lasers

1985 ◽  
Author(s):  
C. B. SU ◽  
V. LANZISERA ◽  
W. POWZINIK ◽  
E. MELAND ◽  
R. OLSHANSKY ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Modulation Bandwidth ◽  
Direct Modulation ◽  
Buried Heterostructure

12.5-GHz direct modulation bandwidth and Impedance charactaristics of vapor-phase regrown 1.3-μm InGaAsP BH lasers

1985 ◽  
Author(s):  
C. B. Su ◽  
V. Lanzisera ◽  
E. Meland ◽  
R. Olshansky ◽  
W. Powazinik ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Modulation Bandwidth ◽  
Direct Modulation

In situDeep Etching for an InGaAlAs Buried Heterostructure by Using HCl Gas in a Metalorganic Vapor Phase Epitaxy Reactor

2004 ◽  
Vol 43 (No. 10A) ◽  
pp. L1247-L1249 ◽  
Author(s):  
Tomonobu Tsuchiya ◽  
Takeshi Kitatani ◽  
Kiyoshi Ouchi ◽  
Hiroshi Sato ◽  
Masahiko Aoki
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Buried Heterostructure ◽  
Hcl Gas
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