Low-noise room-temperature wideband parametric amplifiers

1971 ◽  
Vol 7 (22) ◽  
pp. 657 ◽  
Author(s):  
J.C. Vokes ◽  
J.R. Dawsey ◽  
H.A. Deadman
Keyword(s):  
Room Temperature ◽  
Low Noise ◽  
Parametric Amplifiers

Magnetoelectric Sensors With Directly Integrated Charge Sensitive Readout Circuit—Improved Field Sensitivity and Signal-to-Noise Ratio

2011 ◽  
Vol 11 (10) ◽  
pp. 2260-2265 ◽  
Author(s):  
Zhao Fang ◽  
Ninad Mokhariwale ◽  
Feng Li ◽  
Suman Datta ◽  
Q. M. Zhang
Keyword(s):  
Room Temperature ◽  
Signal To Noise Ratio ◽  
Low Noise ◽  
Magnetic Sensors ◽  
Readout Circuit ◽  
Signal To Noise ◽  
Low Frequencies ◽  
Field Sensitivity ◽  
Piezoelectric Layers ◽  
Noise Ratio

The large magnetoelectric (ME) coupling in the ME laminates makes them attractive for ultrasensitive room temperature magnetic sensors. Here ,we investigate the field sensitivity and signal-to-noise ratio (SNR) of ME laminates, consisting of magnetostrictive and piezoelectric layers (Metglas and piezopolymer PVDF were used as the model system), which are directly integrated with a low noise readout circuit. Both the theoretical analysis and experimental results show that increasing the number of piezoelectric layers can improve the SNR, especially at low frequencies. We also introduce a figure of merit to measure the overall influence of the piezolayer properties on the SNR and show that the newly developed piezoelectric single crystals of PMN-PT and PZN-PT have the promise to achieve a very high SNR and consequently ultra-high sensitivity room temperature magnetic sensors. The results show that the ME coefficients used in early ME composites development works may not be relevant to the SNR. The results also show that enhancing the magnetostrictive coefficient, for example, by employing the flux concentration effect, can lead to enhanced SNR.

New Perspectives in Low Noise Preamplifier Design for Room Temperature Detector Applications

1993 ◽  
Vol 302 ◽  
Author(s):  
P.F. Manfredi
Keyword(s):  
Room Temperature ◽  
Silicon Detector ◽  
Low Noise ◽  
Discrete Elements ◽  
Active Devices ◽  
Temperature Detector ◽  
Low Noise Preamplifier

ABSTRACTAfter reviewing the noise limits in room temperature preamplifiers based on discrete elements, the paper discusses some results obtained with monolithic circuits and the perspectives opened-up by active devices directly integrated on the chip of a silicon detector.

An Ultra Low Noise Preamplifier for Room Temperature X-Ray Detectors

1993 ◽  
Vol 302 ◽  
Author(s):  
G. Bertuccio ◽  
P. Rehak ◽  
D.M. Xi
Keyword(s):  
Feedback Loop ◽  
Room Temperature ◽  
Low Noise ◽  
Charge Amplifier ◽  
X Ray ◽  
Input Field ◽  
Feedback Capacitor ◽  
Effect Transistor ◽  
Feedback Resistor ◽  
Ultra Low Noise

ABSTRACTA new circuital configuration for the charge amplifier is presented. By means of a double feedback loop, the input field-effect transistor can operate with its gate junction sligtly forward biased, collecting the detector current and discharging the feedback capacitor. The feedback resistor is so avoided and no resetting device or circuit is required for the preamplifier operation. The noise is limited by the input transistor, an equivalent noise charge of 19.5 r.m.s. electrons has been measured at room temperature by employing a commercial JFET.

A Study of Low-Noise Preamplifier Systems for Use with Room Temperature Mercuric Iodide (Hgi2) X-Ray Detectors

1981 ◽  
Vol 28 (1) ◽  
pp. 579-582 ◽  
Author(s):  
J. S. Iwanczyk ◽  
A. J. Dabrowski ◽  
G. C. Huth ◽  
A. Del Duca ◽  
W. Schnepple
Keyword(s):  
Room Temperature ◽  
Low Noise ◽  
Mercuric Iodide ◽  
X Ray ◽  
Low Noise Preamplifier
Sign in / Sign up

Export Citation Format

Share Document