High resolution physical analysis of ohmic contact formation at GaN-HEMT devices

2017 ◽  
Vol 76-77 ◽  
pp. 338-343 ◽  
Author(s):  
A. Graff ◽  
M. Simon-Najasek ◽  
F. Altmann ◽  
J. Kuzmik ◽  
D. Gregušová ◽  
...  
Keyword(s):  
High Resolution ◽  
Ohmic Contact ◽  
Physical Analysis ◽  
Contact Formation ◽  
Gan Hemt ◽  
Ohmic Contact Formation

Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing

2017 ◽  
Vol 64 (3) ◽  
pp. 1385-1389 ◽  
Author(s):  
Lin-Qing Zhang ◽  
Zhuo Liu ◽  
Sheng-Xun Zhao ◽  
Min-Zhi Lin ◽  
Peng-Fei Wang
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Microwave Annealing ◽  
Gan Hemt ◽  
Ohmic Contact Formation

Micron-Scale Annealing for Ohmic Contact Formation Applied in GaN HEMT Gate-First Technology

2018 ◽  
Vol 39 (12) ◽  
pp. 1896-1899 ◽  
Author(s):  
Zhikun Liu ◽  
Dingbo Chen ◽  
Lijun Wan ◽  
Guoqiang Li
Keyword(s):  
Ohmic Contact ◽  
Contact Formation ◽  
Gan Hemt ◽  
Ohmic Contact Formation

Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN

2008 ◽  
Vol 41 (17) ◽  
pp. 175105
Author(s):  
Yow-Jon Lin ◽  
Feng-Tso Chien ◽  
Ching-Ting Lee ◽  
Chi-Shin Lin ◽  
Yang-Chun Liu
Keyword(s):  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

Al-nGaAs ohmic contact formation by H2SeO3 treatment and annealing

2001 ◽  
Author(s):  
Sarunas Meskinis ◽  
Kestutis Slapikas ◽  
R. Gudaitis
Keyword(s):  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing

2000 ◽  
Vol 338-342 ◽  
pp. 1619-1619
Author(s):  
L.S. Tan ◽  
A. Raman ◽  
K.M. Ng ◽  
S.J. Chua ◽  
A.T.S. Wee ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Low Temperature ◽  
Ohmic Contact ◽  
Science And Technology ◽  
Contact Formation ◽  
Low Temperature Annealing ◽  
Silicon Doped ◽  
Ohmic Contact Formation ◽  
Double Publication

“removed due to double publication”. The original paper: Journal: Semiconductor Science and Technology Create an alertIssue Volume 15, Number 6 Citation: L S Tan et al 2000 Semicond. Sci. Technol. 15 585 doi: 10.1088/0268-1242/15/6/317 can be accesses at IOP: http://iopscience.iop.org/0268-1242/15/6/317

Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation

2017 ◽  
Vol 215 (9) ◽  
pp. 1700516
Author(s):  
Ievgen Boturchuk ◽  
Leopold Scheffler ◽  
Arne Nylandsted Larsen ◽  
Brian Julsgaard
Keyword(s):  
Heat Treatment ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation

2003 ◽  
Vol 82 (5) ◽  
pp. 736-738 ◽  
Author(s):  
H. Tang ◽  
J. A. Bardwell ◽  
J. B. Webb ◽  
S. Rolfe ◽  
Y. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Treatment ◽  
Ohmic Contact ◽  
Molecular Beam ◽  
Contact Formation ◽  
P Type ◽  
Ohmic Contact Formation
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