High current interleaved power converter for metal processing applications

2014 ◽  
Author(s):  
A.N. Hopkins ◽  
N. McNeill ◽  
D. Grant
Keyword(s):  
Power Converter ◽  
High Current ◽  
Metal Processing

scholarly journals High-efficiency high-current drive power converter IC for wearable medical devices

2015 ◽  
Vol 12 (24) ◽  
pp. 20150953-20150953 ◽  
Author(s):  
Yen-Chia Chu ◽  
Nabi Sertac Artan ◽  
Dariusz Czarkowski ◽  
Le-Ren Chang-Chien ◽  
Jonathan Chao
Keyword(s):  
Medical Devices ◽  
High Efficiency ◽  
Power Converter ◽  
Current Drive ◽  
High Current ◽  
Drive Power ◽  
Wearable Medical

P‐33: A High Current‐Drive, Step‐Up Capacitive Power Converter for Display Driver

2020 ◽  
Vol 51 (1) ◽  
pp. 1474-1477
Author(s):  
Chenglin Li ◽  
Dewei Zhang ◽  
Weiling Zeng ◽  
Hesheng Lin ◽  
Min Zhang
Keyword(s):  
Power Converter ◽  
Current Drive ◽  
High Current ◽  
Display Driver

Package design and development of a low cost high temperature (250°C), high current (50+A), low inductance discrete power package for advanced Silicon Carbide (SiC) and Gallium Nitride (GaN) devices

2013 ◽  
Vol 2013 (1) ◽  
pp. 000592-000597
Author(s):  
B. McPherson ◽  
B. Passmore ◽  
P. Killeen ◽  
D. Martin ◽  
A. Barkley ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
High Temperature ◽  
Power Density ◽  
High Performance ◽  
Elevated Temperatures ◽  
Power Converter ◽  
System Level ◽  
High Current ◽  
Package Design

The demands for high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of post silicon materials, including Silicon Carbide (SiC) and Gallium Nitride (GaN), are numerous, including: high temperature operation, high voltage blocking capability, extremely fast switching, and superior energy efficiency. These advantages, however, are severely limited by conventional power packages, particularly at temperatures higher than 175°C and >100 kHz switching speeds. In this discussion, APEI, Inc. presents the design of a newly developed discrete package specifically intended for high performance, high current (>50A), rapid switching, and extended temperature (>250°C) wide band gap devices which are now readily available on the commercial market at voltages exceeding 1200V. Finite element analysis (FEA) results will be presented to illustrate the modeling process, design tradeoffs, and critical decisions fundamental to a high performance package design. A low profile design focuses on reducing parasitic impedances which hinder high speed switching. A notable increase in the switching speed and frequency reduces the size and volume of associated filtering components in a power converter. Operating at elevated temperatures reduces the requirements of the heat removal system, ultimately allowing for a substantial increase in the power density. Highlights of these packages include the flexibility to house a variety of device sizes and types, co-packaged antiparallel diodes, a terminal layout designed to allow rapid system configuration (for paralleling or creating half- and full-bridge topologies), and a novel wire bondless backside cooled construction for lateral GaN HEMT devices. Specific focus was placed on minimizing the cost of the materials and fabrication processes of the package components. The design of the package is discussed in detail. High temperature testing of a SiC assembly and electrical test results of a high frequency GaN based boost converter will be presented to demonstrate system level performance advantages.

Simulation of a non conventional high current low voltage power converter with EMTP

1995 ◽  
Vol 38 (4-6) ◽  
pp. 323-333
Author(s):  
Carlos Guimarães ◽  
Guy Olivier ◽  
Georges-Émile April
Keyword(s):  
Low Voltage ◽  
Power Converter ◽  
High Current

Multistructure Power Converter With H-Bridge Series Regulator Suitable for High-Current High-Precision-Pulsed Current Source

2015 ◽  
Vol 30 (12) ◽  
pp. 6534-6542 ◽  
Author(s):  
Emiliano Penovi ◽  
Rogelio Garcia Retegui ◽  
Sebastian Maestri ◽  
Gustavo Uicich ◽  
Mario Benedetti
Keyword(s):  
High Precision ◽  
Current Source ◽  
Power Converter ◽  
Pulsed Current ◽  
High Current
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