P‐33: A High Current‐Drive, Step‐Up Capacitive Power Converter for Display Driver

2020 ◽  
Vol 51 (1) ◽  
pp. 1474-1477
Author(s):  
Chenglin Li ◽  
Dewei Zhang ◽  
Weiling Zeng ◽  
Hesheng Lin ◽  
Min Zhang
Keyword(s):  
Power Converter ◽  
Current Drive ◽  
High Current ◽  
Display Driver

scholarly journals High-efficiency high-current drive power converter IC for wearable medical devices

2015 ◽  
Vol 12 (24) ◽  
pp. 20150953-20150953 ◽  
Author(s):  
Yen-Chia Chu ◽  
Nabi Sertac Artan ◽  
Dariusz Czarkowski ◽  
Le-Ren Chang-Chien ◽  
Jonathan Chao
Keyword(s):  
Medical Devices ◽  
High Efficiency ◽  
Power Converter ◽  
Current Drive ◽  
High Current ◽  
Drive Power ◽  
Wearable Medical

scholarly journals Study of off-axis current drive using EC top-launch in KSTAR

2019 ◽  
Vol 203 ◽  
pp. 02003
Author(s):  
Young-soon Bae
Keyword(s):  
Operation Research ◽  
Essential Element ◽  
Current Drive ◽  
Electron Trapping ◽  
Lower Hybrid ◽  
Low Density ◽  
Simulation Studies ◽  
High Current ◽  
High Efficient ◽  
Lower Hybrid Current Drive

The off-axis current drive using electron cyclotron (EC) wave is typically very low due to the low density and temperature and electron trapping effect when it is launched from outside midplane. However, the heating and current drive by EC wave is being regarded as a essential element as an off-axis current drive source together with lower hybrid current drive (LHCD) for advanced tokamak operation research in KSTAR in future. Therefore, the reliable and high efficient ECCD using top launch has been studied for two different launch schemes of down-shift and up-shift resonance with various EC frequencies which will be available in the future KSTAR ECRH system. The ray tracing (GENRAY) simulation studies show that a broad ECCD profile peaked off axis is obtained with a high current drive efficiency for both schemes. It is almost twice as high as that of the outside midplane launch for the fundamental O-mode EC wave.

High Current Drive in Ultra-Short Impact Ionization MOS (I-MOS) Devices

2006 ◽  
Author(s):  
C. Charbuillet ◽  
S. Monfray ◽  
E. Dubois ◽  
P. Bouillon ◽  
F. Judong ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Current Drive ◽  
High Current ◽  
Mos Devices

Package design and development of a low cost high temperature (250°C), high current (50+A), low inductance discrete power package for advanced Silicon Carbide (SiC) and Gallium Nitride (GaN) devices

2013 ◽  
Vol 2013 (1) ◽  
pp. 000592-000597
Author(s):  
B. McPherson ◽  
B. Passmore ◽  
P. Killeen ◽  
D. Martin ◽  
A. Barkley ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
High Temperature ◽  
Power Density ◽  
High Performance ◽  
Elevated Temperatures ◽  
Power Converter ◽  
System Level ◽  
High Current ◽  
Package Design

The demands for high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of post silicon materials, including Silicon Carbide (SiC) and Gallium Nitride (GaN), are numerous, including: high temperature operation, high voltage blocking capability, extremely fast switching, and superior energy efficiency. These advantages, however, are severely limited by conventional power packages, particularly at temperatures higher than 175°C and >100 kHz switching speeds. In this discussion, APEI, Inc. presents the design of a newly developed discrete package specifically intended for high performance, high current (>50A), rapid switching, and extended temperature (>250°C) wide band gap devices which are now readily available on the commercial market at voltages exceeding 1200V. Finite element analysis (FEA) results will be presented to illustrate the modeling process, design tradeoffs, and critical decisions fundamental to a high performance package design. A low profile design focuses on reducing parasitic impedances which hinder high speed switching. A notable increase in the switching speed and frequency reduces the size and volume of associated filtering components in a power converter. Operating at elevated temperatures reduces the requirements of the heat removal system, ultimately allowing for a substantial increase in the power density. Highlights of these packages include the flexibility to house a variety of device sizes and types, co-packaged antiparallel diodes, a terminal layout designed to allow rapid system configuration (for paralleling or creating half- and full-bridge topologies), and a novel wire bondless backside cooled construction for lateral GaN HEMT devices. Specific focus was placed on minimizing the cost of the materials and fabrication processes of the package components. The design of the package is discussed in detail. High temperature testing of a SiC assembly and electrical test results of a high frequency GaN based boost converter will be presented to demonstrate system level performance advantages.

Hybrid SETMOS Architecture With Coulomb Blockade Oscillations and High Current Drive

2004 ◽  
Vol 25 (6) ◽  
pp. 411-413 ◽  
Author(s):  
A.M. Ionescu ◽  
S. Mahapatra ◽  
V. Pott
Keyword(s):  
Coulomb Blockade ◽  
Current Drive ◽  
High Current
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