Iodide Substitution Induced Phase Transition of Chemical Vapor Deposited MoS2

2022 ◽  
Author(s):  
Tianfu Zhang ◽  
Zimeng Zeng ◽  
Xiaoyang Xiao ◽  
Zhongzheng Huang ◽  
Jie Zhao ◽  
...  
Keyword(s):  
Phase Transition ◽  
Contact Resistance ◽  
Molybdenum Disulfide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Chemical Vapor ◽  
Full Potential ◽  
Chemical Vapor Deposited

Molybdenum disulfide (MoS2) based electronic devices, particularly field effect transistors, have outstanding performance. However, a large contact resistance between electrode metals and MoS2 limits the full potential of these devices....

scholarly journals High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

2013 ◽  
Vol 102 (14) ◽  
pp. 142106 ◽  
Author(s):  
Wei Wu ◽  
Debtanu De ◽  
Su-Chi Chang ◽  
Yanan Wang ◽  
Haibing Peng ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

scholarly journals Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates

2015 ◽  
Vol 106 (6) ◽  
pp. 062101 ◽  
Author(s):  
A. Sanne ◽  
R. Ghosh ◽  
A. Rai ◽  
H. C. P. Movva ◽  
A. Sharma ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

scholarly journals Molybdenum Disulfide Field Effect Transistors under Electron Beam Irradiation and External Electric Fields

2020 ◽  
Vol 4 (1) ◽  
pp. 25
Author(s):  
Aniello Pelella ◽  
Alessandro Grillo ◽  
Enver Faella ◽  
Filippo Giubileo ◽  
Francesca Urban ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molybdenum Disulfide ◽  
Field Emission ◽  
Electric Fields ◽  
Field Effect ◽  
Electron Beam Irradiation ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Beam Irradiation ◽  
Back Gate

In this work, monolayer molybdenum disulfide (MoS2) nanosheets, obtained via chemical vapor deposition onto SiO2/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. We study their electric characteristics from 10−6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Moreover, Schottky metal contacts in monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) are investigated under electron beam irradiation conditions. It is shown that the exposure of Ti/Au source/drain electrodes to an electron beam reduces the contact resistance and improves the transistor performance. It is shown that e-beam irradiation lowers the Schottky barrier at the contacts due to thermally induced atom diffusion and interfacial reactions. The study demonstrates that electron beam irradiation can be effectively used for contact improvement though local annealing. It is also demonstrated that the application of an external field by a metallic nanotip induces a field emission current, which can be modulated by the voltage applied to the Si substrate back-gate. Such a finding, that we attribute to gate-bias lowering of the MoS2 electron affinity, enables a new field-effect transistor based on field emission.

High performance electronic devices based on nanofibers via a crosslinking welding process

Nanoscale ◽  
2018 ◽  
Vol 10 (41) ◽  
pp. 19427-19434 ◽  
Author(s):  
Youchao Cui ◽  
You Meng ◽  
Zhen Wang ◽  
Chunfeng Wang ◽  
Guoxia Liu ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Epoxy Resin ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Welding Process ◽  
Device Performance ◽  
Adhesion Performance

An amine-hardened epoxy resin was selected as adhesion agent to weld nanofiber and improve the adhesion performance, resulting in low contact-resistance nanofiber networks (NFNs). The field-effect transistors based on In2O3 NFNs/SiO2 exhibit high device performance.

Scalable chemical vapor deposited graphene field-effect transistors for bio/chemical assay

2021 ◽  
Vol 8 (1) ◽  
pp. 011311
Author(s):  
Rajesh ◽  
Zhaoli Gao ◽  
A. T. Charlie Johnson ◽  
Nidhi Puri ◽  
Ashok Mulchandani ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Chemical Assay ◽  
Chemical Vapor Deposited
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