scholarly journals High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

2013 ◽  
Vol 102 (14) ◽  
pp. 142106 ◽  
Author(s):  
Wei Wu ◽  
Debtanu De ◽  
Su-Chi Chang ◽  
Yanan Wang ◽  
Haibing Peng ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

scholarly journals All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

2020 ◽  
Vol 10 (19) ◽  
pp. 6656
Author(s):  
Stefano Lai ◽  
Giulia Casula ◽  
Pier Carlo Ricci ◽  
Piero Cosseddu ◽  
Annalisa Bonfiglio
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Large Area ◽  
Parylene C ◽  
Biomedical Sensing ◽  
Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS2

2016 ◽  
Vol 6 (2) ◽  
pp. 198-204 ◽  
Author(s):  
Dianzhong Wu ◽  
Zhiyong Zhang ◽  
Danhui Lv ◽  
Guoli Yin ◽  
Zhijian Peng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Integrated Circuits ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor

scholarly journals Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates

2015 ◽  
Vol 106 (6) ◽  
pp. 062101 ◽  
Author(s):  
A. Sanne ◽  
R. Ghosh ◽  
A. Rai ◽  
H. C. P. Movva ◽  
A. Sharma ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

scholarly journals High Mobility of Dithiophene-Tetrathiafulvalene Single-Crystal Organic Field Effect Transistors

2004 ◽  
Vol 126 (4) ◽  
pp. 984-985 ◽  
Author(s):  
Marta Mas-Torrent ◽  
Murat Durkut ◽  
Peter Hadley ◽  
Xavi Ribas ◽  
Concepció Rovira
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Organic Field Effect Transistors
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