Synergistic Magnetic Proximity and Ferroelectric Field Effect on 2H-VS2 Monolayer by Ferromagnetic Termination of BiFeO3(0001) Surface

Journal of Materials Chemistry C ◽

10.1039/d1tc04764g ◽

2022 ◽

Author(s):

Jian-Qing Dai ◽

Jin Yuan ◽

Cheng Ke

Keyword(s):

Field Effect ◽

Van Der Waals ◽

Ferromagnetic Semiconductors

In present work, simultaneously introducing magnetic proximity and ferroelectric filed effect is demonstrated to be an encouraging strategy toward obtaining nonvolatile electrically-controlled 2D van der Waals ferromagnetic semiconductors. By using...

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Reply to “Comment on ‘Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed’”

ACS Nano ◽

10.1021/acsnano.5b08198 ◽

2016 ◽

Vol 10 (2) ◽

pp. 1716-1717

Author(s):

Jin Sung Kim ◽

Hee Sung Lee ◽

Seongil Im

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Van Der Waals ◽

High Mobility ◽

Effect Transistor

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Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides

npj 2D Materials and Applications ◽

10.1038/s41699-018-0082-2 ◽

2018 ◽

Vol 2 (1) ◽

Cited By ~ 17

Author(s):

June Yeong Lim ◽

Minju Kim ◽

Yeonsu Jeong ◽

Kyeong Rok Ko ◽

Sanghyuck Yu ◽

...

Keyword(s):

Transition Metal ◽

Field Effect ◽

Field Effect Transistors ◽

Van Der Waals ◽

Transition Metal Dichalcogenides ◽

Metal Dichalcogenides ◽

Channel Transition ◽

Junction Field Effect Transistors

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Steep Slope p-type 2D WSe2 Field-Effect Transistors with Van Der Waals Contact and Negative Capacitance

2018 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2018.8614493 ◽

2018 ◽

Cited By ~ 3

Author(s):

Jingli Wang ◽

Xuyun Guo ◽

Zhihao Yu ◽

Zichao Ma ◽

Yanghui Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Van Der Waals ◽

Steep Slope ◽

Negative Capacitance ◽

P Type

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Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure

ACS Nano ◽

10.1021/acsnano.8b01810 ◽

2018 ◽

Vol 12 (7) ◽

pp. 6700-6705 ◽

Cited By ~ 61

Author(s):

Mengwei Si ◽

Pai-Ying Liao ◽

Gang Qiu ◽

Yuqin Duan ◽

Peide D. Ye

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Van Der Waals ◽

Two Dimensional ◽

Van Der Waals Heterostructure

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Measurement of Two Dimensional Van Der Waals Materials' Bandgap Using Ambipolar Field Effect Transistor with Graphene Contact and hBN Passivation

ECS Meeting Abstracts ◽

10.1149/ma2018-01/10/901 ◽

2018 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Van Der Waals ◽

Two Dimensional ◽

Effect Transistor ◽

Van Der Waals Materials

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(Invited) From Field-Effect Transistors to Tunneling Devices and Resistive Random Access Memories in Two-Dimensional Van Der Waals Structures

ECS Meeting Abstracts ◽

10.1149/ma2019-01/12/826 ◽

2019 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Van Der Waals ◽

Random Access ◽

Two Dimensional ◽

Tunneling Devices

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Hysteresis-free MoS2 metal semiconductor field-effect transistors with van der Waals Schottky junction

Nanotechnology ◽

10.1088/1361-6528/abd2e8 ◽

2021 ◽

Vol 32 (13) ◽

pp. 135201

Author(s):

Da Wan ◽

Qixia Wang ◽

Hao Huang ◽

Bei Jiang ◽

Chen Chen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Van Der Waals ◽

Schottky Junction

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Light‐Emitting Transistors: Multioperation‐Mode Light‐Emitting Field‐Effect Transistors Based on van der Waals Heterostructure (Adv. Mater. 43/2020)

Advanced Materials ◽

10.1002/adma.202070320 ◽

2020 ◽

Vol 32 (43) ◽

pp. 2070320

Author(s):

Junyoung Kwon ◽

June‐Chul Shin ◽

Huije Ryu ◽

Jae Yoon Lee ◽

Dongjea Seo ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Van Der Waals ◽

Light Emitting ◽

Van Der Waals Heterostructure ◽

Light Emitting Transistors

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Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures

Physical Chemistry Chemical Physics ◽

10.1039/c9cp04654b ◽

2019 ◽

Vol 21 (42) ◽

pp. 23611-23619 ◽

Cited By ~ 9

Author(s):

Xinming Qin ◽

Wei Hu ◽

Jinlong Yang

Keyword(s):

Electric Field ◽

Field Effect ◽

Ohmic Contacts ◽

Field Effect Transistors ◽

Van Der Waals ◽

Interlayer Coupling ◽

Van Der Waals Heterostructures ◽

Potential Applications

Electric field and interlayer coupling tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures have been predicted theoretically to expect potential applications in graphene-based field-effect transistors.

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Tunnel Field Effect Transistors Based on Two-Dimensional Material Van-der-Waals Heterostructures

10.5772/intechopen.93143 ◽

2020 ◽

Author(s):

Jiang Cao

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Van Der Waals ◽

Two Dimensional ◽

Van Der Waals Heterostructures

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