Oxygen Vacancies Modulating the Photodetector Performances in ε-Ga2O3 Thin Films

2021 ◽  
Author(s):  
Shan Li ◽  
Jianying Yue ◽  
Xueqiang Ji ◽  
Chao Lu ◽  
Zuyong Yan ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Critical Role ◽  
Carrier Transfer ◽  
Post Annealing ◽  
Trapping Centers ◽  
Annealing Method ◽  
Photoelectric Devices

By acting as the trapping centers during change carrier transfer, the oxygen vacancy (VO) plays a critical role in oxide photoelectric devices. Herein, a post-annealing method was introduced to perfect...

Critical role of {002} preferred orientation on electronic band structure of electrodeposited monoclinic WO3 thin films

2018 ◽  
Vol 2 (10) ◽  
pp. 2224-2236 ◽  
Author(s):  
Wai Ling Kwong ◽  
Pramod Koshy ◽  
Judy N. Hart ◽  
Wanqiang Xu ◽  
Charles C. Sorrell
Keyword(s):  
Thin Films ◽  
Band Structure ◽  
Oxygen Vacancies ◽  
Electronic Band Structure ◽  
Critical Role ◽  
Preferred Orientation ◽  
Electronic Band ◽  
Wo3 Thin Films

Decoupled effects of crystallographic {002} orientation and oxygen vacancies on the electronic band structure of monoclinic WO3 films.

Defect-Mediated Mechanics in Non-Stoichiometric Oxide Films

MRS Advances ◽  
2018 ◽  
Vol 3 (10) ◽  
pp. 537-545 ◽  
Author(s):  
Jessica G. Swallow ◽  
Mostafa Youssef ◽  
Krystyn J. Van Vliet
Keyword(s):  
Thin Films ◽  
Elastic Modulus ◽  
Oxygen Vacancy ◽  
Elastic Properties ◽  
Oxygen Vacancies ◽  
Experimental Results ◽  
Chemical Expansion ◽  
Chemomechanical Coupling ◽  
Defect Content ◽  
Material Volume

ABSTRACTChemomechanical coupling is a hallmark of the functional oxides that are used widely for energy conversion and storage applications including solid oxide fuel cells (SOFCs). These oxides rely on the presence of oxygen vacancies to enable important properties including ionic conductivity and gas exchange reactivity. However, such defects can also facilitate chemical expansion, or coupling between material volume and defect content. Such chemomechanical coupling is particularly relevant with the recent interest in thin film SOFCs which have the potential to decrease operating temperatures and enable portable applications. Thin films present a particular challenge for modelling, as experimental results indicate that film defect chemistry can differ significantly from bulk counterparts under the same experimental conditions. In this study, we explore the influence of point defects, including oxygen vacancies and cation dopants, on the elastic properties of a model material, PrxCe1-xO2-δ (PCO), using density functional theory (DFT + U) simulations. Previously, we showed that PCO films exhibit a decrease in Young’s elastic modulus E due to chemical expansion, but that this decrease can be larger than predicted based on bulk defect models. Here, we apply DFT + U to show that the biaxial elastic modulus of PCO decreases with increased oxygen vacancy content in both bulk and membrane forms. We consider the relative influences of oxygen vacancies and cation dopants on this trend, and highlight local structural changes in the presence of such defects. By relating our computational and experimental results, we evaluate the relative importance of increased oxygen vacancy content and finite thickness on the mechanical properties of oxides that are subject to chemical expansion under operando conditions. This work informs the design of μ-SOFCs, emphasizing the need to characterize thin films separately from bulk counterparts and demonstrating how functional defect content can influence development of stress and strain in devices by changing both material volume and elastic properties.

Characterization of AgGaSe2 thin films grown by post annealing method

2006 ◽  
Vol 515 (2) ◽  
pp. 505-508 ◽  
Author(s):  
H. Matsuo ◽  
K. Yoshino ◽  
T. Ikari
Keyword(s):  
Thin Films ◽  
Post Annealing ◽  
Annealing Method

The Study of Purity Improvement on Tl-1223 Thin Films by DC Sputtering and Post-annealing Method

2014 ◽  
Vol 27 (7) ◽  
pp. 1665-1670 ◽  
Author(s):  
X. X. Gao ◽  
W. Xie ◽  
Z. Wang ◽  
X. J. Zhao ◽  
M. He ◽  
...  
Keyword(s):  
Thin Films ◽  
Dc Sputtering ◽  
Post Annealing ◽  
Annealing Method

scholarly journals Characterization of nanostructured VO_2 thin films grown by magnetron controlled sputtering deposition and post annealing method

2009 ◽  
Vol 17 (26) ◽  
pp. 24153 ◽  
Author(s):  
Sihai Chen ◽  
Jianjun Lai ◽  
Jun Dai ◽  
Hong Ma ◽  
Hongchen Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Sputtering Deposition ◽  
Post Annealing ◽  
Annealing Method

Near interface ionic transport in oxygen vacancy stabilized cubic zirconium oxide thin films

2018 ◽  
Vol 20 (41) ◽  
pp. 26068-26071 ◽  
Author(s):  
Mohsin Raza ◽  
Simone Sanna ◽  
Lucia dos Santos Gómez ◽  
Eric Gautron ◽  
Abdel Aziz El Mel ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Zirconium Oxide ◽  
Cold Plasma ◽  
Oxygen Vacancies ◽  
Ionic Transport ◽  
Cubic Phase ◽  
Oxide Thin Films ◽  
Sputtering Deposition ◽  
Pure Zirconia

The cubic phase of pure zirconia (ZrO2) is stabilized in dense thin films through a controlled introduction of oxygen vacancies (O defects) by cold-plasma-based sputtering deposition.

Investigation of interface and oxygen vacancy of Pt/Ba0.6Sr0.4TiO3/MgO interdigital capacitor through sequent low and high temperature annealings

2017 ◽  
Vol 31 (11) ◽  
pp. 1750124
Author(s):  
A. Y. Song ◽  
X. H. Dai ◽  
J. M. Song ◽  
D. Y. Ge ◽  
J. Shi ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Pulsed Laser ◽  
Dielectric Constants ◽  
Laser Deposition ◽  
Dielectric Losses ◽  
Interdigital Capacitor ◽  
Post Annealing

Pt/Ba[Formula: see text]Sr[Formula: see text]TiO[Formula: see text] (BST)/MgO interdigital capacitor (IDC) was patterned from a Pt/BST/MgO heterostructure, in which Pt film was prepared by sputtering and epitaxial BST film by pulsed laser deposition (PLD). Post-annealings at 200[Formula: see text]C and 750[Formula: see text]C were successively applied to the sample in order to investigate the impacts of post-annealing on the structural and dielectric properties of the IDC. The dielectric constants of the sample for as-grown and annealed at 200[Formula: see text]C and 750[Formula: see text]C were 1529, 1717 and 1800 and the corresponding dielectric losses were 0.073, 0.062 and 0.059, respectively. This is attributed to the fact that 200[Formula: see text]C annealing can improve the quality of Pt/BST interface and 750[Formula: see text]C annealing can reduce the oxygen vacancies in BST film. Our results provide the evidences that both the interface and oxygen vacancy play very important roles in dielectric properties of BST-based IDCs.

scholarly journals Zinc Vacancy-Induced Room-Temperature Ferromagnetism in Undoped ZnO Thin Films

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Hongtao Ren ◽  
Gang Xiang ◽  
Gangxu Gu ◽  
Xi Zhang ◽  
Wenjun Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Positron Annihilation ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Direct Relationship ◽  
Room Temperature Ferromagnetism ◽  
Zno Thin Films ◽  
Zinc Vacancy ◽  
Post Annealing ◽  
Different Temperatures

Undoped ZnO thin films are prepared by polymer-assisted deposition (PAD) and treated by postannealing at different temperatures in oxygen or forming gases (95%  Ar+5% H2). All the samples exhibit ferromagnetism at room temperature (RT). SQUID and positron annihilation measurements show that post-annealing treatments greatly enhance the magnetizations in undoped ZnO samples, and there is a positive correlation between the magnetization and zinc vacancies in the ZnO thin films. XPS measurements indicate that annealing also induces oxygen vacancies that have no direct relationship with ferromagnetism. Further analysis of the results suggests that the ferromagnetism in undoped ZnO is induced by Zn vacancies.

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