Flexible Electronics Based Upon 2D Transition Metal Dichalcogenides

2021 ◽  
Author(s):  
Dongting Jiang ◽  
Zhiyuan Liu ◽  
Zhe Xiao ◽  
Zhengfang Qian ◽  
Yiling Sun ◽  
...  
Keyword(s):  
Transition Metal ◽  
Flexible Electronics ◽  
Space Exploration ◽  
Transition Metal Dichalcogenides ◽  
Electronics Industry ◽  
Inorganic Oxides ◽  
Flexible Devices ◽  
Metal Dichalcogenides ◽  
Materials Used

Flexible devices play an important role in various fields such as electronics, industry, healthcare, military, space exploration, and so on. Traditional materials used for flexible devices include silicon, inorganic oxides,...

scholarly journals High elasticity and strength of ultra-thin metallic transition metal dichalcogenides

2021 ◽  
Author(s):  
Ali Sheraz ◽  
Naveed Mehmood ◽  
Mert Mirac Cicek ◽  
İbrahim Ergün ◽  
Hamid Reza Rasouli ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Transition Metal ◽  
Flexible Electronics ◽  
Transition Metal Dichalcogenides ◽  
High Elasticity ◽  
Metal Dichalcogenides

Mechanical properties of transition metal dichalcogenides (TMDCs) are relevant to their prospective applications in flexible electronics. So far, the focus has been on the semiconducting TMDCs, mostly MoX2 and WX2...

scholarly journals A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

RSC Advances ◽  
2020 ◽  
Vol 10 (51) ◽  
pp. 30529-30602 ◽  
Author(s):  
Hari Singh Nalwa
Keyword(s):  
Transition Metal ◽  
Molybdenum Disulfide ◽  
Strong Interaction ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Flexible Devices ◽  
Metal Dichalcogenides ◽  
Self Powered

Two-dimensional transition metal dichalcogenides have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures with other nanomaterials.

scholarly journals Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors

Nanomaterials ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 882 ◽  
Author(s):  
Yonatan Vaknin ◽  
Ronen Dagan ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Flexible Electronics ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Depletion Region ◽  
In Situ Monitoring ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Metal Dichalcogenides

The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS2), a transition metal dichalcogenides semiconductor, is considered an auspicious candidate for the post-silicon era due to its outstanding chemical and thermal stability. We present a Kelvin probe force microscopy (KPFM) study of a MoS2 FET device, showing direct evidence for pinch-off formation in the channel by in situ monitoring of the electrostatic potential distribution along the conducting channel of the transistor. In addition, we present a systematic comparison between a monolayer MoS2 FET and a few-layer MoS2 FET regarding gating effects, electric field distribution, depletion region, and pinch-off formation in such devices.

Recent progress of flexible electronics by 2D transition metal dichalcogenides

Nano Research ◽  
2021 ◽  
Author(s):  
Lu Zheng ◽  
Xuewen Wang ◽  
Hanjun Jiang ◽  
Manzhang Xu ◽  
Wei Huang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Flexible Electronics ◽  
Recent Progress ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides

scholarly journals In-plane and vertical heterostructures from 1T’/2H transition-metal dichalcogenides

2022 ◽  
Author(s):  
Yang Ma ◽  
Shiyu Xu ◽  
Juntian Wei ◽  
Bin Zhou ◽  
Yongji Gong
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Chemical Properties ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Flexible Devices ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Z Contrast ◽  
Physical And Chemical

Abstract Objectives An avalanche of research has been carried out on two-dimensional (2D) transition metal dichalcogenides (TMDs) due to their potential applications in advanced electronics and flexible devices. To take full use of the emerging 2D TMDs materials, their in-plane/vertical heterostructures have been explored, enabling effective tuning of their physical and chemical properties. However, structural differences between the various phases impede the formation of functional heterostructures. Therefore, robust synthesis strategies for heterostructures with different phases have been explored in this study. Methods A chemical vapor deposition process has been proposed in which the key parameters like reaction sources, deposition sites, etc. have been carefully adjusted, trying to achieve simultaneous synthesis of 1T’/2H in-plane and vertical heterostructures. Results Consequently, 2D in-plane RexMo1-xS2/MoS2 and vertical ReS2/MoS2 heterostructures have been produced in different regions at the same time. Atomic-resolution Z-contrast images reveal the detailed atomic structure of the 1T’/2H interfaces. The lateral interface is found to contain Mo atoms with only 5-fold coordination with S due to the phase mismatch. Conclusion This work demonstrates a route to exploit heterostructures of different phases and opens the possibility to build more complicated 2D heterostructures using CVD.

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