scholarly journals High elasticity and strength of ultra-thin metallic transition metal dichalcogenides

2021 ◽  
Author(s):  
Ali Sheraz ◽  
Naveed Mehmood ◽  
Mert Mirac Cicek ◽  
İbrahim Ergün ◽  
Hamid Reza Rasouli ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Transition Metal ◽  
Flexible Electronics ◽  
Transition Metal Dichalcogenides ◽  
High Elasticity ◽  
Metal Dichalcogenides

Mechanical properties of transition metal dichalcogenides (TMDCs) are relevant to their prospective applications in flexible electronics. So far, the focus has been on the semiconducting TMDCs, mostly MoX2 and WX2...

scholarly journals Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors

Nanomaterials ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 882 ◽  
Author(s):  
Yonatan Vaknin ◽  
Ronen Dagan ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Flexible Electronics ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Depletion Region ◽  
In Situ Monitoring ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Metal Dichalcogenides

The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS2), a transition metal dichalcogenides semiconductor, is considered an auspicious candidate for the post-silicon era due to its outstanding chemical and thermal stability. We present a Kelvin probe force microscopy (KPFM) study of a MoS2 FET device, showing direct evidence for pinch-off formation in the channel by in situ monitoring of the electrostatic potential distribution along the conducting channel of the transistor. In addition, we present a systematic comparison between a monolayer MoS2 FET and a few-layer MoS2 FET regarding gating effects, electric field distribution, depletion region, and pinch-off formation in such devices.

Defect evolution behaviors from single sulfur point vacancies to line vacancies in the monolayer molybdenum disulfide

2021 ◽  
Author(s):  
Chan Gao ◽  
Xiaoyong Yang ◽  
Ming Jiang ◽  
LiXin Chen ◽  
Zhi Wen Chen ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Transition Metal ◽  
Molybdenum Disulfide ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Defect Evolution ◽  
Metal Dichalcogenides ◽  
Optoelectronic Applications

Two-dimensional monolayer transition metal dichalcogenides (TMDs) are the promising candidates for many novel nanoelectronic and optoelectronic applications due to their exceptional electronic, optical, chemical and mechanical properties. Experimentally, single chalcogen...

Recent progress of flexible electronics by 2D transition metal dichalcogenides

Nano Research ◽  
2021 ◽  
Author(s):  
Lu Zheng ◽  
Xuewen Wang ◽  
Hanjun Jiang ◽  
Manzhang Xu ◽  
Wei Huang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Flexible Electronics ◽  
Recent Progress ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides

Flexible Electronics Based Upon 2D Transition Metal Dichalcogenides

2021 ◽  
Author(s):  
Dongting Jiang ◽  
Zhiyuan Liu ◽  
Zhe Xiao ◽  
Zhengfang Qian ◽  
Yiling Sun ◽  
...  
Keyword(s):  
Transition Metal ◽  
Flexible Electronics ◽  
Space Exploration ◽  
Transition Metal Dichalcogenides ◽  
Electronics Industry ◽  
Inorganic Oxides ◽  
Flexible Devices ◽  
Metal Dichalcogenides ◽  
Materials Used

Flexible devices play an important role in various fields such as electronics, industry, healthcare, military, space exploration, and so on. Traditional materials used for flexible devices include silicon, inorganic oxides,...

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