Regular ordering of spherical microdomains in dewetted monolayer islands induced by thermal annealing of spin-coated ultrathin films of a triblock copolymer

Soft Matter ◽  
2021 ◽  
Author(s):  
Rasha Ahmed Hanafy Bayomi ◽  
Takashi Aoki ◽  
Sono Sasaki ◽  
Shinichi Sakurai

We report spontaneous dewetting of a spin-coated, ultra-thin film of a sphere-forming block copolymer upon thermal annealing, and that the dewetting resulted in the formation of plateau-shaped islands, in which the spherical microdomains are regularly ordered.

2018 ◽  
Vol 379 (1) ◽  
pp. 1600184 ◽  
Author(s):  
Shigeo Suita ◽  
Norihiko Maruyama ◽  
Sadayuki Asaoka ◽  
Sono Sasaki ◽  
Shinichi Sakurai

2020 ◽  
Vol 140 (4) ◽  
pp. 92-96
Author(s):  
Yuto Goda ◽  
Hiroto Shobu ◽  
Kenji Sakai ◽  
Toshihiko Kiwa ◽  
Kenji Kondo ◽  
...  

Small ◽  
2021 ◽  
pp. 2100437
Author(s):  
Deepra Bhattacharya ◽  
Subarna Kole ◽  
Orhan Kizilkaya ◽  
Joseph Strzalka ◽  
Polyxeni P. Angelopoulou ◽  
...  

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.


2021 ◽  
Author(s):  
Olufemi Olatidoye ◽  
Daria Thomas ◽  
Bishnu Bastakoti

A facile synthesis of a mesoporous TiO2 thin film is reported using poly(styrene-2-vinyl pyridine-ethylene oxide) polymeric micelle as a synthetic template. As the Ti precursor strongly binds with polymeric micelles...


2014 ◽  
Vol 6 (12) ◽  
pp. 9442-9448 ◽  
Author(s):  
Jonathan W. Choi ◽  
Myungwoong Kim ◽  
Nathaniel S. Safron ◽  
Michael S. Arnold ◽  
Padma Gopalan
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