Control of Cu morphology on Ru-passivated and Ru-doped TaN Surfaces – promoting growth of 2D conducting copper for CMOS interconnects
Prolonging the lifetime of Cu as level 1 and level 2 interconnect metal in future nanoelectronic devices is a significant challenge as device dimensions continue to shrink and device structures...
2018 ◽
Vol 5
(2)
◽
pp. 7
◽