Ferroelectric PbZrxTi1-xO3 Thin Films Grown by Organometallic Chemical Vapor Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
G.J.M. Dormans ◽  
M. de Keijser ◽  
P. J. van Veldhoven
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Growth ◽  
Large Area ◽  
Si Substrates ◽  
Ic Technology ◽  
Ferroelectric Switching ◽  
Organometallic Chemical Vapor Deposition

AbstractFor the successful integration of ferroelectric thin films in IC technology, there is a need for a deposition technique capable of growing homogeneous layers at high growth rates over large-area structured substrates. Organometallic chemical vapor deposition (OMCVD) is a promising technique for meeting these demands.Ferroelectric layers of PbZrxTi1-xO3 (PZT) were grown by OMCVD on Pt-coated 10 cm diameter Si-substrates using the precursors tetra-ethyl-lead, tetra-iso-propoxy-titanium and tetra-tertiary-butoxy-zirconium at 700 °C without any post anneal. At this temperature the layers are single phase and highly (h00) and/or (00l) oriented. The layers show good ferroelectric switching properties with high remanent polarizations, but also with high coercive field strengths. Fatigue measurements are presented for these OMCVD grown PZT layers. The layers have a switching lifetime exceeding 1011 cycles at a switching amplitude of 5 V.

CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7198-7204 ◽  
Author(s):  
Michael E. Ramón ◽  
Aparna Gupta ◽  
Chris Corbet ◽  
Domingo A. Ferrer ◽  
Hema C. P. Movva ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Large Area ◽  
Cobalt Thin Films ◽  
Cmos Compatible

High‐Tc Undoped and Pb‐Doped BI‐SR‐CA‐CU‐O thin Films Prepared by Organometallic Chemical Vapor Deposition

1989 ◽  
Vol 169 ◽  
Author(s):  
J. M. Zhang ◽  
H. O Marcy ◽  
L .M. Tonge ◽  
B. W. Wessels ◽  
T. J. Marks ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Tc ◽  
Metal Organic ◽  
Organic Precursors ◽  
Organometallic Chemical Vapor Deposition

AbstractFilms of the high‐Tc undoped and Pb‐doped Bi‐Sr‐Ca‐Cu‐O (BSCCO) superconductors have been prepared by low pressure organometallic chemical vapor deposition (OMCVD) using the volatile metal‐organic precursors Cu(acetylacetonate)2, Sr(dipivaloylmethanate)2, Ca(dipivaloylmethanate)2, and triphenyl bismuth. Factors which influence texture and morphology of the OMCVD‐derived films have been investigated, including the effects of annealing, doping, and substrates.

Growth of CdTe Thin Films on Polar and Nonpolar Semiconductor Substrates by Metalorganic Chemical Vapor Deposition.

1988 ◽  
Vol 144 ◽  
Author(s):  
P. Grodzinski ◽  
J.H. Mazur ◽  
A. Nouhi ◽  
R.J. Stirn ◽  
R. Sudharsananu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Gaas Surface ◽  
Organic Chemical ◽  
Orientation Relationships ◽  
Si Substrates ◽  
Cdte Thin Films

ABSTRACTElectron diffraction and high resolution electron microscopy (HREM) have been used to investigate the origin of multiple orientation-relationships and defect structure of CdTe thin films grown on (100) GaAs and Si substrates by metal- organic chemical vapor deposition (MOCVD). It has been determined that growth at 370°C with pre-exposure of the GaAs surface to Te following oxide desorption treatment at 600°C resulted in non-parallel epitaxy ((111)CdTe // (100)GaAs), while growth at 300°C following oxide desorption at 500°C with no exposure to Te resulted in parallel epitaxy ((100)CdTe // (100)GaAs). Both epitaxial orientation-relationships were observed on the same substrate for growth at 300°C temperature after 600°C oxide desorption treatment, but with no pre-exposure of the GaAs surface to Te. Preliminary results of growth of CdTe on Si are also reported.

Growth of zinc oxide thin films on Y2O3/Si substrates by chemical vapor deposition

2005 ◽  
Vol 275 (1-2) ◽  
pp. e2481-e2485 ◽  
Author(s):  
Chih-Wei Lin ◽  
Tsan-Yao Cheng ◽  
Li Chang ◽  
Jenh-Yih Juang
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Thin Films ◽  
Si Substrates

Organometallic chemical vapor deposition of superconducting, highTcPb‐doped Bi‐Sr‐Ca‐Cu‐O thin films

1989 ◽  
Vol 55 (18) ◽  
pp. 1906-1908 ◽  
Author(s):  
J. M. Zhang ◽  
H. O. Marcy ◽  
L. M. Tonge ◽  
B. W. Wessels ◽  
T. J. Marks ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organometallic Chemical Vapor Deposition
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