Perspectives for CdSe/CdS Spherical Quantum Wells as Rapid-Response Nano-Scintillators

Nanoscale ◽  
2021 ◽  
Author(s):  
Zhu Meng ◽  
Benoit Mahler ◽  
Julien Houel ◽  
Florian Kulzer ◽  
Gilles Ledoux ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Shell Thickness ◽  
Rapid Response ◽  
Time Response ◽  
X Ray ◽  
Timing Properties

We explore the effect of the shell thickness on the time response of CdS/CdSe/CdS spherical quantum wells (SQWs) nanoscintillators under X-ray excitation. We first compare the spectral and timing properties...

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electron microscopy

2003 ◽  
Vol 240 (2) ◽  
pp. 297-300 ◽  
Author(s):  
T. M. Smeeton ◽  
M. J. Kappers ◽  
J. S. Barnard ◽  
M. E. Vickers ◽  
C. J. Humphreys
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Wells ◽  
Single Quantum ◽  
X Ray ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
Ray Scattering

Photoluminescence and X-ray characterisation of Si/Si1−xGex multiple quantum wells

1998 ◽  
Vol 80 (1-4) ◽  
pp. 503-507 ◽  
Author(s):  
T.P. Sidiki ◽  
A. Rühm ◽  
W.-X. Ni ◽  
G.V. Hansson ◽  
C.M. Sotomayor Torres
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray

Atomic ordering in (InGa)(AsN) quantum wells: An In K-edge X-ray absorption investigation

2003 ◽  
Vol 200 ◽  
pp. 34-39 ◽  
Author(s):  
G. Ciatto ◽  
F. Boscherini ◽  
F. D’Acapito ◽  
S. Mobilio ◽  
G. Baldassarri H.v.H ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Atomic Ordering ◽  
X Ray ◽  
X Ray Absorption

Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
Nicolas Grandjean ◽  
Jean Massies ◽  
Mathieu Leroux ◽  
Marguerite Latigt ◽  
Pierre Lefebvre ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Stark Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quantum Confined Stark Effect ◽  
Sapphire Substrates ◽  
Gan Buffer Layer ◽  
Large Quantum

AbstractAIGaN/GaN quantum well (QWs) were grown on (0001) sapphire substrates by molecular beam epitaxy (MBE) using ammonia as nitrogen precursor. The Al composition in the barriers was varied between 8 and 27 % and the well thickness from 4 to 17 monolayers (MLs, 1ML = 2.59Å). X-ray diffraction (XRD) experiments are used to investigate the strain state of both the well and the barriers. The QW transition energy are measured by low temperature photoluminescence (PL). A large quantum confined Stark effect is observed leading to QW luminescence much lower than the emission line of the GaN buffer layer for well width above a certain critical thickness. The built-in electric field responsible for such a phenomenon is deduced from fit of the PL data. Its magnitude is of several hundred kV/cm and increases linearly with the Al composition.

Grazing Incidence X-ray Scattering Studies of Single Quantum Wells

1988 ◽  
pp. 155-160 ◽  
Author(s):  
S. Bates ◽  
P. D. Hatton ◽  
C. A. Lucas ◽  
T. W. Ryan ◽  
S. J. Miles ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Grazing Incidence ◽  
Single Quantum ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering
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