Effect of the Hf content on the microstructure and ferroelectric properties of HfxZr1−xO2 thin films using an all-inorganic aqueous precursor solution

Nanoscale ◽  
2021 ◽  
Vol 13 (38) ◽  
pp. 16216-16225
Author(s):  
Jingjing Wang ◽  
Dayu Zhou ◽  
Wei Dong ◽  
Ziqi Li ◽  
Nana Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Inorganic Salt ◽  
Ferroelectric Properties ◽  
Precursor Solution ◽  
Ferroelectric Thin Films ◽  
20 Nm

20 nm thick Hf-doped ZrO2-based ferroelectric thin films were prepared using all-inorganic salt precursors through the CSD method.

Characterisation of Ferroelectric Lithium Tantalate Thin Films Prepared by a Sol-Gel Process

1993 ◽  
Vol 321 ◽  
Author(s):  
Chianping Ye ◽  
Paul Baude ◽  
Dennis L. Polla
Keyword(s):  
Thin Films ◽  
Curie Temperature ◽  
Single Crystal ◽  
Silicon Substrate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Solution ◽  
Pyroelectric Coefficient ◽  
Crystal Silicon ◽  
Sol Gel Process

ABSTRACTThin LiTaO3 films were prepared by spin coating of polymerized sol-gel precursor solution. Films have been deposited on single crystal silicon substrate, Ti/Pt or SiO2 coated silicon substrate. Films were characterized by x-ray diffraction, dielectric and pyroelectric Measurements. High Curie temperature (above 550 °C) was assumed for LiTaO3 thin films from the temperature dependence of dielectric constant. Replacing 35% of tantalum by titanium atoms in the LiTaO3 precursor solution has resulted the thin films with Curie temperature of 330 °C. The lower Curie temperature leads to the larger pyroelectric coefficient at room-temperature, which is more than double that of the undoped LiTaO3 thin films. The dielectric, pyroelectric, and ferroelectric properties have been compared to the single crystal LiTaO3 and ceramic Li0.91Ta0.73Ti0.36O3. LiTaO3 thin films are available by sol-gel process at low temperature, and their properties may possibly be controlled by varying the composition of the sol-gel precursor solution.

The role of nanoporosity on the local piezo and ferroelectric properties of lead titanate thin films

2015 ◽  
Vol 3 (5) ◽  
pp. 1035-1043 ◽  
Author(s):  
Alichandra Castro ◽  
Paula Ferreira ◽  
Brian J. Rodriguez ◽  
Paula M. Vilarinho
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Lead Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Films ◽  
Piezoelectric Response ◽  
Nanoporous Films ◽  
Switching Behaviour ◽  
Dense Films

Nanoporous PbTiO3 films present enhanced tetragonality at lower temperatures than respective dense films. Moreover, the porosity present in the nanoporous films allows an increase of the local piezoelectric response and a decrease of the local coercive field. As a result, these nanoporous films might be used to improve the switching behaviour of ferroelectric thin films.

scholarly journals Local Fatigue Evaluation in PZT Thin Films with Nanoparticles by Piezoresponse Force Microscopy

2012 ◽  
Vol 2012 ◽  
pp. 1-9
Author(s):  
B. S. Li
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Solution ◽  
Grain Morphology ◽  
Piezoresponse Force Microscopy ◽  
Lead Zirconate ◽  
Fatigue Performance ◽  
Pzt Thin Films

Lead zirconate titanate (PZT) thin films with the morphotropic phase boundary composition (Zr/Ti = 52/48) have been prepared using a modified diol-based sol-gel route by introducing 1–5 mol% barium titanate (BT) nanoseeds into the precursor solution on platinized silicon substrates (Pt/Ti/SiO2/Si). Macroscopic electric properties of PZT film with nanoparticle showed a significant improvement of ferroelectric properties. This work aims at the systematic study of the local switching polarization behavior during fatigue in PZT films with and without nanoparticles by using very recent developed scanning piezoelectric microscopy (SPM). We show that the local fatigue performance, which is characterized by variations of local piezoloop with electric cycles, is significantly improved by adding some nanoseeds. It has been verified by scanning electron microscope (SEM) that the film grain morphology changes from columnar to granular structure with the addition of the nanoseeds. On the other hand, the existence of PtxPb transition phase, which existed in interface at early crystallization stage of pure PZT thin film, deteriorates the property of the interface. These microstructures and the interfaces of these films significantly affect the electrons injection occurred on the interfaces. The domain wall pinning induced by injected electrons and the succeeding penetration into the films is discussed to explain the fatigue performance.

The influence of niobium-doping on lead zirconate titanate ferroelectric thin films

1991 ◽  
Vol 69 (3-4) ◽  
pp. 260-264 ◽  
Author(s):  
E. M. Griswold ◽  
M. Sayer ◽  
D. T. Amm ◽  
I. D. Calder
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Ferroelectric Thin Films ◽  
Crystallographic Structure ◽  
Niobium Content ◽  
Processing Technologies ◽  
Niobium Doping ◽  
Zirconate Titanate

Ferroelectric thin films have recently proven viable for nonvolatile memory applications in semiconductor technology. Current research is focused on the development of processing technologies and deposition on metallized semiconductor substrates. In this study, niobium-doped lead zirconate titanate thin films were prepared by a dc magnetron-sputtering technique using a multielement metal target. Films were deposited on indium tin oxide coated glass and on metallizations on silicon substrates. The crystallographic structure and surface morphology of the films was examined by scanning electron microscopy and X-ray diffraction as a function of processing variables such as sputtering pressure, film thickness, and niobium content. Electrical characterization of the films is discussed in terms of ferroelectric hysteresis and polarization properties. Improved ferroelectric properties are achieved through a densified structure resulting from niobium-doping.

Microstructure and Properties of A-Site Doping Bi4-xYxTi3O12 Ferrroelectric Thin Films

2015 ◽  
Vol 815 ◽  
pp. 171-175
Author(s):  
Hong Cheng Liu ◽  
Wei Jun Zhang ◽  
Xiao Chen Zhang ◽  
Qian Yu ◽  
Jue Wang
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Phase Development ◽  
Sol Gel Process ◽  
A Site

s. Yttium-substituted bismuth titanate (Bi4-xYxTi3O12, BYT) thin films were deposited on the (111)Pt/Ti/SiO2(100) substrates by a modified Sol-Gel process and studied in this work in terms ofY3+-modified microstructure and phase development as well as ferroelectric properties. With the aid of the fist-principle, the position of Y3+substitution for Bi3+on the microstructure of BYT was studied.The phase change in the formation of BYT crystalline and the effect of Y3+substitution for Bi3+on the microstructure of BYT was studiedbyXRD. The results showed that the optimal properties of the obtained BYT ferroelectric thin films werex:0.6. The ferroelectric properties of the films were also investigated. When the Y-substituted contentxwas equal to 0.6, the remnant polarization was the largest. The remnant polarization 2Prvalue was equal to 16.02μC/cm2and the coercive fieldEcvalue was 88 kV/cm.

Influence of Ta content on the physical properties of SrBi2Ta2O9 ferroelectric thin films

2006 ◽  
Vol 21 (12) ◽  
pp. 3124-3133 ◽  
Author(s):  
Fan-Yi Hsu ◽  
Ching-Chich Leu ◽  
Chao-Hsin Chien ◽  
Chen-Ti Hu
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Spin Coating ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Films ◽  
Preferential Orientation ◽  
Strontium Bismuth Tantalate ◽  
Metalorganic Decomposition

We have investigated the effect that the Ta content has on the ferroelectric properties of strontium bismuth tantalate (SBT) thin films synthesized using metalorganic decomposition (MOD) and spin coating techniques. The physical properties of these SBT samples were strongly dependent upon the Ta ratio. Polarization measurements revealed that Ta-deficient SBT exhibited a relatively low coercive field (2Ec ∼ 87 kV/cm) and a high remanent polarization (2Pr ∼ 15 μC/cm2). The value of 2Pr decreased as the Ta ratio in SBT increased. The improved ferroelectric properties of the Ta-deficient SBT samples may have resulted from the uniformly well-grown bismuth-layered-structured (BLS) phases of the films and their highly preferential orientation along the a and b axes. We suggest that the incorporation of Ta vacancies plays an important role in enhancing the crystallinities and microstructures of Ta-deficient SBT films.

Electrical Characteristics in Transparent (Bi3.25Nd0.75)(Ti2.9V0.1)O12 Ferroelectric Thin Films

2014 ◽  
Vol 602-603 ◽  
pp. 777-780
Author(s):  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Film ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Film Capacitor ◽  
X Ray

In this study, we investigated the structure and ferroelectric properties of the as-deposited (Bi3.25Nd0.75)(Ti2.9V0.1)O12ferroelectric thin films on ITO substrate fabricated by rf magnetron sputtering method. The electrical, ferroelectric and physical characteristics of as-deposited (Bi3.25Nd0.75)(Ti2.9V0.1)O12thin films were developed under different conditions to find the optimal deposited parameters. The crystalline structure of the prepared (Bi3.25Nd0.75)(Ti2.9V0.1)O12thin films was analyzed by X-ray diffraction (XRD). Field emission scanning electron microscopy (FESEM) was used to observe the film thickness and the surface morphology including grain size and porosity. Additionally, the remnant polarization of the as-deposited ferroelectric thin films was improved by neodymium and vanadium elements doped in this study. The remanent polarization of as-deposited ferroelectric thin films was 11 μC/cm2as the measured frequency of 1kHz. Finally, the polarization of as-deposited ferroelectric thin film capacitor was decreased by 9% after the fatigue test with 109switching cycles.

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