scholarly journals Spintronic memristor for neuromorphic circuits based on the angular variation of tunnel magnetoresistance

Nanoscale ◽  
2021 ◽  
Author(s):  
Marco Mansueto ◽  
Antoine Chavent ◽  
Stephane Auffret ◽  
Isabelle Joumard ◽  
Laurent Vila ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Angular Variation ◽  
Neuromorphic Circuits ◽  
Tunnel Magnetoresistance ◽  
New Type

In this study, a new type of magnetic memristor is demonstrated. It is based on the variation of the conductivity of a nano-sized magnetic tunnel junction as a function of...

High Tunnel Magnetoresistance in Mo/CoFe/MgO Magnetic Tunnel Junction: A First-Principles Study

2017 ◽  
Vol 53 (11) ◽  
pp. 1-4 ◽  
Author(s):  
Jiaqi Zhou ◽  
Weisheng Zhao ◽  
Shouzhong Peng ◽  
Junfeng Qiao ◽  
Jacques-Olivier Klein ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
First Principles ◽  
Magnetic Tunnel Junction ◽  
High Tunnel ◽  
Tunnel Magnetoresistance ◽  
First Principles Study

Resonant Tunnel Magnetoresistance in a Double Magnetic Tunnel Junction

2011 ◽  
Vol 25 (8) ◽  
pp. 2573-2576
Author(s):  
A. N. Useinov ◽  
N. K. Useinov ◽  
L. R. Tagirov ◽  
J. Kosel
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunnel Magnetoresistance ◽  
Resonant Tunnel

scholarly journals Tunnel Magnetoresistance of Fe3O4/MgO/Fe Nanostructures

2011 ◽  
Vol 2011 ◽  
pp. 1-3
Author(s):  
S. G. Chigarev ◽  
E. M. Epshtein ◽  
I. V. Malikov ◽  
G. M. Mikhailov ◽  
P. E. Zilberman
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Magnetic Fields ◽  
Tunnel Junction ◽  
Magnetic Energy ◽  
Magnetic Tunnel Junction ◽  
Tunnel Magnetoresistance ◽  
Unidirectional Anisotropy ◽  
Layer Orientation ◽  
Layer Magnetization

A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel magnetoresistance is calculated as a function of the external magnetic field. In contrast with junctions with unidirectional anisotropy, a substantially lower magnetic field is required for the junction switching.

Theoretical Study on Tunnel Magnetoresistance Oscillation Due to Coulomb Blockade in Nanoscale Magnetic Tunnel Junction

2003 ◽  
Vol 776 ◽  
Author(s):  
Yasushi Takemura ◽  
Jun-ichi Shirakashi
Keyword(s):  
Tunnel Junction ◽  
Coulomb Blockade ◽  
Theoretical Study ◽  
Voltage Dependence ◽  
Magnetic Tunnel Junction ◽  
Tunnel Magnetoresistance ◽  
The Monte Carlo Method ◽  
Current Voltage ◽  
Coulomb Staircase ◽  
Charging Energy

AbstractIn a small magnetic tunnel junction (MTJ) whose charging energy is larger than a thermal energy, the tunnel magnetoresistance (TMR) is enhanced by the Coulomb blockade. Transport properties in a double MTJ were theoretically studied by using the Monte Carlo method. The temperature dependence of current-voltage and TMR characteristics indicated that a small junction with 5 nm electrodes exhibited the Coulomb blockade at 300 K. It was also found that the background charge changed the threshold voltage of the Coulomb blockade. In asymmetric double tunnel junctions, the current-voltage characteristic exhibited a Coulomb staircase and the voltage dependence of the TMR ratio oscillated.

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