Synthesis and Application of a New 1,3,4-Thiadiazole Substituted Phenanthroimidazole Derivative as Thin Film Heterostructure Exhibiting Negative Differential Resistance and Rectifying Properties

2021 ◽  
Author(s):  
Merve Zurnacı ◽  
Fatih Ünal ◽  
Serkan Demir ◽  
Mahmut Gür ◽  
Nesrin Sener ◽  
...  
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Negative Differential Resistance ◽  
Physical Vapor Deposition ◽  
Differential Resistance ◽  
Prepared Glass

A new phenanthroimidazole derivative bearing 1,3,4-thiadiazole moiety (PMItz) was prepared and deposited as thin film on formerly prepared glass/ITO substrate by physical vapor deposition (PVD) method. The resulting thin film...

scholarly journals CVD and PVD coating process modelling by using artificial neural networks

2012 ◽  
Vol 1 (1) ◽  
pp. 46 ◽  
Author(s):  
Amir Mahyar Khorasani ◽  
Mohammad Reza Solymany yazdi ◽  
Mehdi Faraji ◽  
Alex Kootsookos
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Film Coating ◽  
Deposition Process ◽  
Thin Film Coating ◽  
Mlp Neural Network ◽  
Titanium Thin Film ◽  
Pvd Coating

Thin-film coating plays a prominent role on the manufacture of many industrial devices. Coating can increase material performance due to the deposition process. Having adequate and precise model that can predict the hardness of PVD and CVD processes is so helpful for manufacturers and engineers to choose suitable parameters in order to obtain the best hardness and decreasing cost and time of industrial productions. This paper proposes the estimation of hardness of titanium thin-film layers as protective industrial tools by using multi-layer perceptron (MLP) neural network. Based on the experimental data that was obtained during the process of chemical vapor deposition (CVD) and physical vapor deposition (PVD), the modeling of the coating variables for predicting hardness of titanium thin-film layers, is performed. Then, the obtained results are experimentally verified and very accurate outcomes had been attained.

Time-dependent reverse negative differential resistance in thin-film MIM devices

1986 ◽  
Vol 95 (1) ◽  
pp. 353-359 ◽  
Author(s):  
R. A. Collins ◽  
S. C. Edwards ◽  
F. J. Johnson ◽  
A. G. Jones ◽  
L. D. McMahon
Keyword(s):  
Thin Film ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Time Dependent

scholarly journals Aspects of thin film deposition on granulates by physical vapor deposition

2016 ◽  
Vol 70 (11) ◽  
Author(s):  
Andreas Eder ◽  
Gerwin H.S. Schmid ◽  
Harald Mahr ◽  
Christoph Eisenmenger-Sittner
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Thin Film Deposition ◽  
Film Deposition

Thermodynamic Analysis of Physical Vapor Deposition (PVD) Inorganic Thin Films on Low Temperature Cofired Ceramic (LTCC)

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000175-000182
Author(s):  
Carol Putman ◽  
Rachel Cramm Horn ◽  
Ambrose Wolf ◽  
Daniel Krueger
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
High Reliability ◽  
Interface Energy ◽  
Molecular Stability ◽  
Thin Film Adhesion ◽  
Inorganic Thin Films

Abstract Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high reliability, high density microelectronics. The functionality and robustness of rework has been increased through the incorporation of a Physical Vapor Deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for RF (Radio Frequency) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. While past work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e. thermodynamic) parameters in literature. This paper analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxides coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability over a range of temperatures. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.

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