scholarly journals Vapor-solid-solid growth dynamics in GaAs nanowires

2021 ◽  
Author(s):  
Carina B. Maliakkal ◽  
Marcus Tornberg ◽  
Daniel Jacobsson ◽  
Sebastian Lehmann ◽  
Kimberly A Dick
Keyword(s):  
Coming Of Age ◽  
Growth Dynamics ◽  
Semiconductor Nanowires ◽  
Promising Material ◽  
Gaas Nanowires ◽  
Material Systems ◽  
Axial Growth

Semiconductor nanowires are promising material systems for coming-of-age nanotechnology. The usage of the vapor-solid-solid (VSS) route, where the catalyst used for promoting axial growth of nanowire is a solid, offers...

scholarly journals Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy

2018 ◽  
Vol 30 (6) ◽  
pp. 065602 ◽  
Author(s):  
Suzanne Lancaster ◽  
Heiko Groiss ◽  
Tobias Zederbauer ◽  
Aaron M Andrews ◽  
Donald MacFarland ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Nanowires ◽  
Axial Growth

Mass-transport driven growth dynamics of AlGaAs shells deposited around dense GaAs nanowires by metalorganic vapor phase epitaxy

CrystEngComm ◽  
2015 ◽  
Vol 17 (31) ◽  
pp. 5998-6005 ◽  
Author(s):  
Ilio Miccoli ◽  
Paola Prete ◽  
Nico Lovergine
Keyword(s):  
Mass Transport ◽  
Vapor Phase ◽  
Growth Dynamics ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Shell Material ◽  
Free Standing ◽  
Group Iii ◽  
Gaas Nanowires ◽  
Movpe Growth ◽  
Vapor Mass

The MOVPE growth dynamics of AlGaAs shell material around ensembles of free-standing GaAs nanowires is presented and described by a model based on the vapor mass-transport of group-III species and the nanowires relevant size (diameter, height) and density.

scholarly journals Biodegradable fiducial markers for X-ray imaging – soft tissue integration and biocompatibility

2016 ◽  
Vol 4 (34) ◽  
pp. 5700-5712 ◽  
Author(s):  
Żaneta Górecka ◽  
Juliane Teichmann ◽  
Mirko Nitschke ◽  
Adrian Chlanda ◽  
Emilia Choińska ◽  
...  
Keyword(s):  
Soft Tissue ◽  
Medical Imaging ◽  
Promising Material ◽  
Fiducial Markers ◽  
X Ray ◽  
Tissue Integration ◽  
X Ray Imaging ◽  
Material Systems

This study aims at investigation of material for innovative fiducial markers for soft tissue in X-ray based medical imaging. NH3 plasma modified P[LAcoCL] combined with BaSO4 and hydroxyapatite as radio-opaque fillers appears to be a promising material systems for this application.

scholarly journals Complex axial growth patterns in an early Cambrian trilobite from South Australia

2021 ◽  
Vol 288 (1965) ◽  
Author(s):  
James D. Holmes ◽  
John R. Paterson ◽  
Diego C. García-Bellido
Keyword(s):  
Growth Regulation ◽  
South Australia ◽  
Growth Dynamics ◽  
Growth Patterns ◽  
Abrupt Changes ◽  
Cambrian Trilobite ◽  
Body Segmentation ◽  
Two Phases ◽  
Growth Controls ◽  
Axial Growth

The exceptional fossil record of trilobites provides our best window on developmental processes in early euarthropods, but data on growth dynamics are limited. Here, we analyse post-embryonic axial growth in the Cambrian trilobite Estaingia bilobata from the Emu Bay Shale, South Australia. Using threshold models, we show that abrupt changes in growth trajectories of different body sections occurred in two phases, closely associated with the anamorphic/epimorphic and meraspid/holaspid transitions. These changes are similar to the progression to sexual maturity seen in certain extant euarthropods and suggest that the onset of maturity coincided with the commencement of the holaspid period. We also conduct hypothesis testing to reveal the likely controls of observed axial growth gradients and suggest that size may better explain growth patterns than moult stage. The two phases of allometric change in E. bilobata , as well as probable differing growth regulation in the earliest post-embryonic stages, suggest that observed body segmentation patterns in this trilobite were the result of a complex series of changing growth controls that characterized different ontogenetic intervals. This indicates that trilobite development is more complex than previously thought, even in early members of the clade.

scholarly journals High electron mobility in strained GaAs nanowires

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Leila Balaghi ◽  
Si Shan ◽  
Ivan Fotev ◽  
Finn Moebus ◽  
Rakesh Rana ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Electron Mobility ◽  
High Performance ◽  
Room Temperature ◽  
High Mobility ◽  
Semiconductor Nanowires ◽  
Core Shell ◽  
High Electron ◽  
Bulk Crystals ◽  
Gaas Nanowires

AbstractTransistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where electrons are spatially confined inside the core. Here, it is demonstrated that the strain in lattice-mismatched core/shell nanowires can affect the effective mass of electrons in a way that boosts their mobility to distinct levels. Specifically, electrons inside the hydrostatically tensile-strained gallium arsenide core of nanowires with a thick indium aluminium arsenide shell exhibit mobility values 30–50 % higher than in equivalent unstrained nanowires or bulk crystals, as measured at room temperature. With such an enhancement of electron mobility, strained gallium arsenide nanowires emerge as a unique means for the advancement of transistor technology.

III-V COMPOUND SEMICONDUCTOR NANOWIRES FOR OPTOELECTRONIC DEVICE APPLICATIONS

2011 ◽  
Vol 20 (01) ◽  
pp. 131-141 ◽  
Author(s):  
Q. GAO ◽  
H. J. JOYCE ◽  
S. PAIMAN ◽  
J. H. KANG ◽  
H. H. TAN ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Semiconductor Nanowires ◽  
Compound Semiconductor ◽  
Research Activities ◽  
Exciton Lifetime ◽  
Gaas Nanowires ◽  
Device Applications

GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si ) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB , can also be engineered by carefully controlling the V/III ratio and catalyst size.

Cristal-growth dynamics of n-doped gaAs

1992 ◽  
Vol 50 (2) ◽  
pp. 1544-1545
Author(s):  
Pham V. Huong ◽  
Stéphanie Bouchet ◽  
Jean-Claude Launay
Keyword(s):  
Crystal Growth ◽  
Spatial Resolution ◽  
Epitaxial Layer ◽  
Outer Surface ◽  
Gaas Substrate ◽  
Structural Modification ◽  
Growth Dynamics ◽  
Argon Laser ◽  
High Anisotropy ◽  
Crystal Gaas

Microstructure of epitaxial layers of doped GaAs and its crystal growth dynamics on single crystal GaAs substrate were studied by Raman microspectroscopy with a Dilor OMARS instrument equipped with a 1024 photodiode multichannel detector and a ion-argon laser Spectra-Physics emitting at 514.5 nm.The spatial resolution of this technique, less than 1 μm2, allows the recording of Raman spectra at several spots in function of thickness, from the substrate to the outer deposit, including areas around the interface (Fig.l).The high anisotropy of the LO and TO Raman bands is indicative of the orientation of the epitaxial layer as well as of the structural modification in the deposit and in the substrate at the interface.With Sn doped, the epitaxial layer also presents plasmon in Raman scattering. This fact is already very well known, but we additionally observed that its frequency increases with the thickness of the deposit. For a sample with electron density 1020 cm-3, the plasmon L+ appears at 930 and 790 cm-1 near the outer surface.

Coming Of Age In A Profession

1959 ◽  
Vol 24 (2) ◽  
pp. 195-200
Author(s):  
Jon Eisenson
Keyword(s):  
Coming Of Age

EFPSA - An Organization Coming of Age

2006 ◽  
Vol 11 (4) ◽  
pp. 324-326 ◽  
Author(s):  
Anja Bregar
Keyword(s):  
Coming Of Age
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