Mass-transport driven growth dynamics of AlGaAs shells deposited around dense GaAs nanowires by metalorganic vapor phase epitaxy

CrystEngComm ◽  
2015 ◽  
Vol 17 (31) ◽  
pp. 5998-6005 ◽  
Author(s):  
Ilio Miccoli ◽  
Paola Prete ◽  
Nico Lovergine
Keyword(s):  
Mass Transport ◽  
Vapor Phase ◽  
Growth Dynamics ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Shell Material ◽  
Free Standing ◽  
Group Iii ◽  
Gaas Nanowires ◽  
Movpe Growth ◽  
Vapor Mass

The MOVPE growth dynamics of AlGaAs shell material around ensembles of free-standing GaAs nanowires is presented and described by a model based on the vapor mass-transport of group-III species and the nanowires relevant size (diameter, height) and density.

Optimal Design of Reactors for Metalorganic Vapor Phase Epitaxy of Group III Nitrides

2000 ◽  
Vol 616 ◽  
Author(s):  
R. P. Pawlowski ◽  
C. Theodoropoulos ◽  
T.J. Mountziaris ◽  
H.K. Moffat ◽  
J. Han ◽  
...  
Keyword(s):  
Optimal Design ◽  
Vapor Phase ◽  
Rotating Disk ◽  
Group Iii Nitrides ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Operating Conditions ◽  
Industrial Scale ◽  
Stagnation Flow ◽  
Group Iii

AbstractMetalorganic Vapor Phase Epitaxy (MOVPE) has emerged as the technique of choice for growing thin films and structures of group III-nitrides. The objective of this work is to address the optimal design of vertical rotating disk and stagnation flow MOVPE reactors in order to achieve film thickness uniformity over large area substrates. Gas inlets that preserve the axial symmetry and enable alternating feeding of the precursors through coaxial rings were studied. The growth of GaN films from trimethyl-gallium and ammonia was used as a typical example. A fundamental reaction-transport model of the MOVPE process including gas-phase reactions and gas-surface interactions has been developed. The model was validated through comparison with growth rate data obtained from both research-scale and industrial-scale reactors. Performance diagrams for industrial-scale stagnation flow and rotating disk reactors were developed by varying the reactor geometry and operating conditions to identify regions of uniform film growth.

InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport

2000 ◽  
Vol 77 (11) ◽  
pp. 1638-1640 ◽  
Author(s):  
G. Pozina ◽  
J. P. Bergman ◽  
B. Monemar ◽  
M. Iwaya ◽  
S. Nitta ◽  
...  
Keyword(s):  
Mass Transport ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
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