Defect evolution behaviors from single sulfur point vacancies to line vacancies in the monolayer molybdenum disulfide

Author(s):  
Chan Gao ◽  
Xiaoyong Yang ◽  
Ming Jiang ◽  
LiXin Chen ◽  
Zhi Wen Chen ◽  
...  

Two-dimensional monolayer transition metal dichalcogenides (TMDs) are the promising candidates for many novel nanoelectronic and optoelectronic applications due to their exceptional electronic, optical, chemical and mechanical properties. Experimentally, single chalcogen...

2019 ◽  
Vol 55 (60) ◽  
pp. 8772-8775 ◽  
Author(s):  
Manish K. Jaiswal ◽  
Kanwar Abhay Singh ◽  
Giriraj Lokhande ◽  
Akhilesh K. Gaharwar

We report the synthesis of superhydrophobic two-dimensional (2D) transition metal dichalcogenides by modulation of the degree of atomic defects. The presence of atomic vacancies in 2D molybdenum disulfide (MoS2) nanoassemblies dictated hydrophilic-to-hydrophobic transition and subsequent cell adhesion.


RSC Advances ◽  
2019 ◽  
Vol 9 (34) ◽  
pp. 19707-19711 ◽  
Author(s):  
Min-A Kang ◽  
Seongjun Kim ◽  
In-Su Jeon ◽  
Yi Rang Lim ◽  
Chong-Yun Park ◽  
...  

Two-dimensional transition metal dichalcogenides (TMDs) such as molybdenum disulfide, have recently attracted attention for their applicability as building blocks for fabricating advanced functional materials.


RSC Advances ◽  
2020 ◽  
Vol 10 (51) ◽  
pp. 30529-30602 ◽  
Author(s):  
Hari Singh Nalwa

Two-dimensional transition metal dichalcogenides have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures with other nanomaterials.


Nanophotonics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1675-1694 ◽  
Author(s):  
Yumei Jing ◽  
Baoze Liu ◽  
Xukun Zhu ◽  
Fangping Ouyang ◽  
Jian Sun ◽  
...  

AbstractDiffering from its bulk counterparts, atomically thin two-dimensional transition metal dichalcogenides that show strong interaction with light are considered as new candidates for optoelectronic devices. Either physical or chemical strategies can be utilized to effectively tune the intrinsic electronic structures for adopting optoelectronic applications. This review will focus on the different tuning strategies that include its physics principles, in situ experimental techniques, and its application of various optoelectronic devices.


MRS Advances ◽  
2019 ◽  
Vol 4 (48) ◽  
pp. 2609-2617 ◽  
Author(s):  
Jesse E. Thompson ◽  
Brandon T. Blue ◽  
Darian Smalley ◽  
Fernand Torres-Davila ◽  
Laurene Tetard ◽  
...  

ABSTRACTScanning tunneling microscopy and spectroscopy (STM/STS) are used to electronically switch atomically-thin memristors, referred to as “atomristors”, based on a graphene/molybdenum disulfide (MoS2)/Au heterostructure. A gold-assisted exfoliation method was used to produce near-millimeter (mm) scale MoS2 on Au thin-film substrates, followed by transfer of a separately exfoliated graphene top layer. Our results reveal that it is possible to switch the conductivity of a graphene/MoS2/Au memristor stack using an STM tip. These results provide a path to further studies of atomically-thin memristors fabricated from heterostructures of two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs).


2018 ◽  
Vol 20 (27) ◽  
pp. 18571-18578 ◽  
Author(s):  
Jun Wang ◽  
Haibo Shu ◽  
Tianfeng Zhao ◽  
Pei Liang ◽  
Ning Wang ◽  
...  

Two-dimensional Janus transition metal dichalcogenides with an asymmetric structure present intriguing electronic, transport, and optical properties, which make them ideally suitable for electronic and optoelectronic applications.


ACS Nano ◽  
2021 ◽  
Author(s):  
Miao Zhang ◽  
Martina Lihter ◽  
Tzu-Heng Chen ◽  
Michal Macha ◽  
Archith Rayabharam ◽  
...  

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