The interaction between vacancy defects in gallium sulfide monolayer and a new vacancy defect model

2021 ◽  
Author(s):  
JuTao Zhang ◽  
Ying Liang ◽  
Hao Guo ◽  
Tian C Zhang ◽  
Haidong Fan ◽  
...  
Keyword(s):  
Physical Properties ◽  
Electronic Properties ◽  
2D Materials ◽  
Vacancy Defect ◽  
Sufficient Information ◽  
Two Dimensional ◽  
Defect Model ◽  
Vacancy Defects ◽  
Gallium Sulfide

Vacancy defects are inevitable when synthesizing two-dimensional (2D) materials, and vacancy defects greatly affect the physical properties, such as magnetism and electronic properties. Currently, sufficient information is not available on...

scholarly journals Electronic properties of zigzag silicene nanoribbons with single vacancy defect

2020 ◽  
Vol 19 (1) ◽  
pp. 76
Author(s):  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Afiq Hamzah ◽  
Nurul Ezaila Alias ◽  
Cheng Siong Lim ◽  
...  
Keyword(s):  
Electronic Properties ◽  
2D Materials ◽  
Tight Binding ◽  
Vacancy Defect ◽  
Nearest Neighbour ◽  
Two Dimensional ◽  
Fabrication Technology ◽  
Single Vacancy ◽  
Silicene Nanoribbons ◽  
The Impact

<p>Silicene is envisaged as one of the two-dimensional (2D) materials for future nanoelectronic applications. In addition to its extraordinary electronic properties, it is predicted to be compatible with the silicon (Si) fabrication technology. By using nearest neighbour tight-binding (NNTB) approach, the electronic properties of zigzag silicene nanoribbons (ZSiNRs) with single vacancy (SV) defects are modelled and simulated. For 4-ZSiNR with L=2, the band structures and density of states (DOS) are computed based on SV incorporated ZSiNRs at varying defect locations. The results show that the SV defect will shift the band structure and increase the peak of DOS while the bandgap remain zero. This work provides a theoretical framework to understand the impact of SV defect which is an inevitable non-ideal effect during the fabrication of silicene nanoribbons (SiNRs).</p>

Two-dimensional topological insulators exfoliated from Na3Bi-like Dirac semimetals

2021 ◽  
Author(s):  
Xiaoqiu Guo ◽  
Ruixin Yu ◽  
Jingwen Jiang ◽  
Zhuang Ma ◽  
Xiuwen Zhang
Keyword(s):  
Physical Properties ◽  
Epitaxial Growth ◽  
Topological Insulators ◽  
2D Materials ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Dirac Semimetals

Topological insulation is widely predicted in two-dimensional (2D) materials realized by epitaxial growth or van der Waals (vdW) exfoliation. Such 2D topological insulators (TI’s) host many interesting physical properties such...

Tailoring the structural and electronic properties of an SnSe2/MoS2 van der Waals heterostructure with an electric field and the insertion of a graphene sheet

2019 ◽  
Vol 21 (39) ◽  
pp. 22140-22148 ◽  
Author(s):  
Tuan V. Vu ◽  
Nguyen V. Hieu ◽  
Le T. P. Thao ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Graphene Sheet ◽  
2D Materials ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Van Der Waals Heterostructure ◽  
Two Dimensional Materials ◽  
Structural And Electronic Properties

van der Waals heterostructures by stacking different two-dimensional materials are being considered as potential materials for nanoelectronic and optoelectronic devices because they can show the most potential advantages of individual 2D materials.

Atomistic insight into the oxidation of monolayer transition metal dichalcogenides: from structures to electronic properties

RSC Advances ◽  
2015 ◽  
Vol 5 (23) ◽  
pp. 17572-17581 ◽  
Author(s):  
Hongsheng Liu ◽  
Nannan Han ◽  
Jijun Zhao
Keyword(s):  
Transition Metal ◽  
Electronic Properties ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Insight Into

Monolayer transition metal dichalcogenides (TMDs) stand out in two-dimensional (2D) materials due to their potential applications in future microelectronic and optoelectronic devices.

High mobility and enhanced photoelectric performance in two-dimensional ternary compounds NaCuX (X=S, Se, and Te)

2020 ◽  
Author(s):  
Heming Li ◽  
Xinxin Jiang ◽  
Xuhui Xu ◽  
Ge Xu ◽  
Dongmei Li ◽  
...  
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
2D Materials ◽  
High Mobility ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Ternary Compounds ◽  
Photoelectric Performance ◽  
Thin Structure

Two-dimensional (2D) materials have attracted great interests in the field of optoelectronics in recent years due to their atomically thin structure and various electronic properties. Based on the first-principles calculations...

A novel SiO monolayer with a negative Poisson's ratio and Dirac semimetal properties

2020 ◽  
Vol 22 (35) ◽  
pp. 20107-20113
Author(s):  
Hui Du ◽  
Guoling Li ◽  
Jiao Chen ◽  
Zhenlong Lv ◽  
Yuanzheng Chen ◽  
...  
Keyword(s):  
Physical Properties ◽  
Poisson’S Ratio ◽  
2D Materials ◽  
Poisson's Ratio ◽  
Negative Poisson’S Ratio ◽  
Two Dimensional ◽  
2D Material ◽  
Dirac Semimetal ◽  
Negative Poisson's Ratio

Although a number of interesting physical properties such as a negative Poisson's ratio (NPR) and Dirac semimetal (DS) properties have been recently predicted in two-dimensional (2D) materials, the realization of a 2D material that exhibit both of these DS and NPR features has rarely been reported.

scholarly journals Preparation and Properties of 2D Materials

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 764
Author(s):  
Byungjin Cho ◽  
Yonghun Kim
Keyword(s):  
Physical Properties ◽  
2D Materials ◽  
Great Success ◽  
Two Dimensional

Since the great success of graphene, atomically thin layered nanomaterials—called two-dimensional (2D) materials—have attracted tremendous attention due to their extraordinary physical properties [...]

scholarly journals Exotic Physical Properties of 2D Materials Modulated by Moiré Superlattices

2021 ◽  
Author(s):  
Beibei Shi ◽  
Pengfei Qi ◽  
Meiling Jiang ◽  
Yuchen Dai ◽  
Feng Lin ◽  
...  
Keyword(s):  
Physical Properties ◽  
2D Materials ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Moire Pattern ◽  
Moiré Pattern ◽  
Two Dimensional Materials ◽  
Quantum Phenomena

Van der Waals heterostructures of two-dimensional materials are naturally endowed with the nanoscale moiré pattern, which has become a versatile platform for studying novel quantum phenomena during past decades. Here,...

scholarly journals Coverage-dependent magnetic and electronic properties of graphene with Co adatoms

2021 ◽  
pp. 2150165
Author(s):  
Min Gao ◽  
Jun Hu
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Dirac Point ◽  
2D Materials ◽  
Anomalous Hall Effect ◽  
Spin Moment ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Spin Polarized ◽  
Topological States

Decorating two-dimensional (2D) materials with transition-metal adatoms is an effective way to bring about new physical properties that are intriguing for applications in electronics and spintronics devices. Here, we systematically studied the coverage-dependent magnetic and electronic properties of graphene decorated by Co adatoms, based on first-principles calculations. We found that if the Co coverage is larger than 1/3[Formula: see text]ML, the Co atoms will aggregate to form a Co monolayer and then a van der Waals bilayer system between the Co monolayer and graphene forms. When the Co coverage is [Formula: see text][Formula: see text]ML, the Co adatom is spin-polarized with spin moment varying from 1.1 to 1.4[Formula: see text][Formula: see text]. The [Formula: see text] and [Formula: see text] orbitals of Co hybridize significantly with the [Formula: see text] bands of graphene, which generates a series of new bands in the energy range from [Formula: see text][Formula: see text]eV to 1[Formula: see text]eV with respect to the Dirac point of graphene. In most cases, the new bands near the Fermi level lead to topological states characterized by the quantum anomalous Hall effect.

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