scholarly journals Non-monotonic magnetic anisotropy behavior as a function of adsorbate coverage in Fe ultrathin films near the spin reorientation transition

2021 ◽  
Author(s):  
A. Quesada ◽  
G. Chen ◽  
A. T. N'Diaye ◽  
P. Wang ◽  
Y. Z. Wu ◽  
...  
Keyword(s):  
Carbon Monoxide ◽  
Magnetic Anisotropy ◽  
Ultrathin Films ◽  
Co Adsorption ◽  
Spin Reorientation ◽  
Spin Reorientation Transition ◽  
Out Of Plane

Carbon monoxide (CO) adsorption on ultrathin fcc Fe films is known to result in the rotation of magnetization from out-of-plane to in-plane.

scholarly journals Origin of perpendicular magnetic anisotropy in amorphous thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Daniel Lordan ◽  
Guannan Wei ◽  
Paul McCloskey ◽  
Cian O’Mathuna ◽  
Ansar Masood
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Functional Materials ◽  
Spin Reorientation ◽  
Amorphous Films ◽  
Amorphous Thin Films ◽  
Magnetic Performance ◽  
Out Of Plane ◽  
Sputtering Pressure

AbstractThe emergence of perpendicular magnetic anisotropy (PMA) in amorphous thin films, which eventually transforms the magnetic spins form an in-plane to the out-of-plane configuration, also known as a spin-reorientation transition (SRT), is a fundamental roadblock to attain the high flux concentration advantage of these functional materials for broadband applications. The present work is focused on unfolding the origin of PMA in amorphous thin films deposited by magnetron sputtering. The amorphous films were deposited under a broad range of sputtering pressure (1.6–6.2 mTorr), and its effect on the thin film growth mechanisms was correlated to the static global magnetic behaviours, magnetic domain structure, and dynamic magnetic performance. The films deposited under low-pressure revealed a dominant in-plane uniaxial anisotropy along with an emerging, however feeble, perpendicular component, which eventually evolved as a dominant PMA when deposited under high-pressure sputtering. This change in the nature of anisotropy redefined the orientation of spins from in-plane to out-of-plane. The SRT in amorphous films was attributed to the dramatic change in the growth mechanism of disorder atomic structure from a homogeneously dispersed to a porous columnar microstructure. We suggest the origin of PMA is associated with the columnar growth of the amorphous films, which can be eluded by a careful selection of a deposition pressure regime to avoid its detrimental effect on the soft magnetic performance. To the author’s best knowledge, no such report links the sputtering pressure as a governing mechanism of perpendicular magnetisation in technologically important amorphous thin films.

scholarly journals Temperature-Driven Spin Reorientation Transition in CoPt/AlN Multilayer Films

2012 ◽  
Vol 2012 ◽  
pp. 1-7
Author(s):  
Wupeng Cai ◽  
Shinji Muraishi ◽  
Ji Shi ◽  
Yoshio Nakamura ◽  
Wei Liu ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Mean Field ◽  
Multilayer Films ◽  
Spin Reorientation ◽  
Strong Temperature Dependence ◽  
Mean Field Model ◽  
Spin Reorientation Transition ◽  
Magnetoelastic Effect ◽  
Out Of Plane ◽  
Interface Anisotropy

Spin reorientation transition phenomena from out-of-plane to in-plane direction with increasing temperature are observed for the 500°C annealed CoPt/AlN multilayer films with different CoPt layer thicknesses. CoPt-AlN interface and volume anisotropy contributions, favoring out-of-plane and in-plane magnetization, respectively, are separately determined at various temperatures. Interface anisotropy exhibits much stronger temperature dependence than volume contribution, hence the temperature-driven spin reorientation transition occurs. Interface anisotropy in this work consists of Néel interface anisotropy and magnetoelastic effect. Magnetoelastic effect degrades rapidly and changes its sign from positive to negative above 200°C, because of the involvement of stress state in CoPt films with temperature. By contrast, Néel interface anisotropy decays slowly, estimated from a Néel mean field model. Thus, the strong temperature dependence of CoPt-AlN interface anisotropy is dominated by the change of magnetoelastic effect.

Physical and Magnetic Modification of Co/Pt Multilayers by Ion Irradiation

2002 ◽  
Vol 8 (4) ◽  
pp. 319-332 ◽  
Author(s):  
G.J. Kusinski ◽  
G. Thomas
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Irradiation ◽  
Strain Relaxation ◽  
Magnetic Domain ◽  
Perpendicular Magnetic Anisotropy ◽  
Spin Reorientation ◽  
Microstructural Changes ◽  
Spin Reorientation Transition ◽  
Before And After ◽  
Magnetic Modification

The microstructure of Co/Pt multilayers with large perpendicular magnetic anisotropy (PMA) was investigated before and after energetic ion irradiation. No pronounced microstructural changes were detected at ion doses sufficient to completely reduce the PMA and cause a spin reorientation transition to in-plane. Ion-induced displacement of Co and Pt atoms near Co/Pt interfaces lead to local “roughening” and Co layer strain relaxation, reducing the PMA. The magnetic domain confinement induced by ion irradiation and magnetic patterning by selective ion irradiation were also investigated.

Magnetic Domain Structure and Spin Reorientation Transition in the System Co/Au/W(110)

1997 ◽  
Vol 475 ◽  
Author(s):  
T. Duden ◽  
E. Bauer
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Time Resolution ◽  
Magnetic Domain ◽  
Spin Reorientation ◽  
High Time Resolution ◽  
Spin Reorientation Transition ◽  
In Situ Experiments ◽  
Out Of Plane

ABSTRACTUltrathin epitaxial Co layers grown on Au(111) show strong perpendicular magnetic aniso-tropy resulting in out-of-plane magnetization in thin films. With increasing Co thickness the increasing contribution of the shape anisotropy leads to a reorientation transition of the magnetization which has already been subject of many other studies. In the dynamic in-situ experiments reported here bulk Au(111) is replaced by epitaxially grown Au(111)/W(110). The high time resolution (0.05 ML Co deposition per acquisition cycle) allows to extract several mechanisms which occur during the spin reorientation transition.

Thickness-driven spin reorientation transition in ultrathin films

2012 ◽  
Vol 56 (1) ◽  
pp. 70-84 ◽  
Author(s):  
BingFeng Miao ◽  
YonkoTimtchev Millev ◽  
Liang Sun ◽  
Biao You ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Spin Reorientation ◽  
Spin Reorientation Transition

Spin Reorientation Transition and Magnetization Reversal Mechanism of Gd Doped FeCo High-Frequency Soft Magnetic Thin Films

2014 ◽  
Vol 924 ◽  
pp. 141-151 ◽  
Author(s):  
Yu Rong An ◽  
Yue Li ◽  
Zhen Wang ◽  
Ya Lu Zuo ◽  
Li Xi
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
High Frequency ◽  
Uniaxial Anisotropy ◽  
Spin Reorientation ◽  
Spin Reorientation Transition ◽  
Sputtering Power ◽  
Deposition Power ◽  
Reversal Mechanism

The magnetic FeCoGd thin films with various sputtering power from 10 to 30 W were fabricated on glass substrates by magnetron co-sputtering. The crystal structure of as-deposited FeCoGd thin films was investigated by X-ray diffraction. And an increasing trend of grain size with the increasing sputtering power was shown. When sputtering power is below 30 W, the films exhibited obviously in-plane uniaxial magnetic anisotropy, and the in-plane magnetic anisotropy field Hkdecreased with increasing deposition power. Moreover, good high frequency characteristics were obtained. The magnetization reversal mechanism has been investigated via the in-plane angular dependences of the magnetization and the coercivity. The experimental data points indicated that the magnetization reversal mechanism of FeCoGd film with in-plane uniaxial anisotropy is domain-wall depinning and coherent rotation when the applied field is close to the easy axis and hard axis, respectively. A spin reorientation transition phenomenon was observed when deposition power is larger than 30 W. A stripe domain structure for the sample with 30 W deposition power was developed due to a dominated perpendicular magnetic anisotropy.

scholarly journals Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy

2018 ◽  
Vol 30 (30) ◽  
pp. 1801639 ◽  
Author(s):  
Shishun Zhao ◽  
Lei Wang ◽  
Ziyao Zhou ◽  
Chunlei Li ◽  
Guohua Dong ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Spin Reorientation ◽  
Spin Reorientation Transition

Perpendicular magnetic anisotropy and spin reorientation transition in L10 FePt films

2011 ◽  
Vol 109 (7) ◽  
pp. 07B760 ◽  
Author(s):  
Jae Young Ahn ◽  
Nyun Jong Lee ◽  
Tae Hee Kim ◽  
J.-H. Lee ◽  
Anny Michel ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Spin Reorientation ◽  
Spin Reorientation Transition
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