scholarly journals Stability of organic thin-film transistors based on ultrathin films of dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT)

2021 ◽  
Vol 9 (1) ◽  
pp. 270-280
Author(s):  
Rachana Acharya ◽  
Darius Günder ◽  
Tobias Breuer ◽  
Guido Schmitz ◽  
Hagen Klauk ◽  
...  
Keyword(s):  
Thin Film ◽  
Ultrathin Films ◽  
Thin Film Transistors ◽  
Morphological Changes ◽  
Organic Thin Film Transistors ◽  
Organic Transistors ◽  
Organic Thin Film ◽  
The Stability

Ultrathin DNTT films are unstable due to rapid morphological changes. This work investigates the stability of ultrathin DNTT films and the fabrication of ultrathin DNTT organic transistors.

Stability of Organic Thin Film Transistors

2004 ◽  
Vol 814 ◽  
Author(s):  
Jeong In Han ◽  
Yong Hoon Kim ◽  
Sung Kyu Park ◽  
Dae Gyu Moon ◽  
Won Keun Kim
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Organic Thin Film Transistors ◽  
Passivation Layer ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Saturation Field ◽  
The Stability

AbstractThe stability of organic thin film transistors (OTFTs) has become one of the most vital issues in this area of research. In this report, we investigated the stability of rubber stamp printed OTFTs. The electrical properties such as saturation field effect mobility, threshold voltage and on/off current ratio change significantly in ambient air condition. In order to analyze the degradation of the device, transistors were measured in vacuum, dry N2 and air environment as a function of time. In vacuum and dry N2 atmosphere, saturation field effect mobility and threshold voltage variations are relatively small compared to those measured in ambient condition.To realize an air stable device, we applied a passivation layer which protects the device from oxygen or water molecules which is believed to be the source of the degradation. With the passivation layer, the threshold voltage shift was reduced suggesting that a proper passivation layer is a prerequisite in organic-based electronics.

Modeling of two complementary ambipolar organic thin film Transistors. Application to organic inverter

2020 ◽  
Author(s):  
Houaida Becharguia ◽  
M. Mahdouani ◽  
R. Bourguiga
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Organic Semiconductors ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Transistors ◽  
Organic Thin Film ◽  
Electrical Parameters ◽  
P Type ◽  
Organic Inverter

In this paper, we have study two types of thin-film organic transistors as well as the organic inverter. For manufacturing p-type and n-type organic thin film transistors (OTFT), pentacene and N,N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) were used as organic semiconductors. The organic thin film transistors showed excellent ambipolar operation. This ambipolar device is very useful in building flexible integrated circuits with easy design and low power consumption. The characterization and modeling of complementary thin film organic transistors allows us to describe one of its important applications which are the "inverter". In order to better understand the operation of inverters, an analytical model has been developed to describe the electrical behavior of both types of transistors and organic inverter. The model was carried out for transistors and organic inverters made experimentally. In this present work, we present the different electrical parameters resulting from the modeling for the two types of transistors and the organic inverter wich based on the complementary OTFTs.

Dielectrics for Organic Transistors with Low Threshold Voltage

2005 ◽  
Vol 871 ◽  
Author(s):  
Jochen Brill ◽  
Silke Goettling ◽  
Eduardo Margallo Balbás
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
Dielectric Materials ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Organic Transistors ◽  
Organic Thin Film ◽  
High K ◽  
Low Threshold

AbstractOrganic thin film transistors for display applications are investigated. Different dielectric materials – inorganic and organic – have been studied with respect to their electrical performance It was found that anodic oxidation is an excellent process to achieve smooth high-k dielectrics with high breakthrough field strength. With the proposed electrolyte electrical properties were further improved. The alignment of pentacene on different insulators as well as transistors characteristics is presented.

Solution-sheared ultrathin films for highly-sensitive ammonia detection using organic thin-film transistors

2014 ◽  
Vol 2 (7) ◽  
pp. 1264 ◽  
Author(s):  
Qing Meng ◽  
Fengjiao Zhang ◽  
Yaping Zang ◽  
Dazhen Huang ◽  
Ye Zou ◽  
...  
Keyword(s):  
Thin Film ◽  
Ultrathin Films ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Highly Sensitive ◽  
Ammonia Detection

High Performance Organic Thin Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Tommie W. Kelley ◽  
Dawn V. Muyres ◽  
Paul F. Baude ◽  
Terry P. Smith ◽  
Todd D. Jones
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Integrated Circuit ◽  
Ultrathin Films ◽  
Thin Film Transistors ◽  
High Performance ◽  
Surface Modifications ◽  
Dielectric Materials ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

AbstractWe report here methods of surface modification and device construction which consistently result in lab-scale pentacene-based TFTs with mobilities at or above 5 cm2/Vs. Surface modifications include polymeric ultrathin films presenting a passivated interface on which the semiconductor can grow. High performance TFTs have been fabricated on a variety of dielectric materials, both organic and inorganic, and are currently being implemented in manufacturable constructions. Our surface modifications have also proven useful for substituted pentacene materials and for a variety of other organic semiconductors. In addition, we report an all organic active layer, rf-powered integrated circuit. Further experiments and statistical analyses are underway to explain the elevated mobility in our samples, and efforts have been made to confirm these results through collaboration.

Model for the electro-mechanical behavior of elastic organic transistors

2020 ◽  
Vol 8 (27) ◽  
pp. 9276-9285
Author(s):  
Veronica G. Reynolds ◽  
Saejin Oh ◽  
Renxuan Xie ◽  
Michael L. Chabinyc
Keyword(s):  
Thin Film ◽  
Mechanical Behavior ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Transistors ◽  
Organic Thin Film ◽  
Stability Criteria ◽  
Complementary Inverters ◽  
Organic Electrochemical Transistors

A model is presented to predict the electro-mechanical behavior of organic thin film transistors and organic electrochemical transistors as well as a stability criteria for stretchable complementary inverters.

Molecular antenna tailored organic thin-film transistors for sensing application

2018 ◽  
Vol 5 (2) ◽  
pp. 240-247 ◽  
Author(s):  
Hongguang Shen ◽  
Ye Zou ◽  
Yaping Zang ◽  
Dazhen Huang ◽  
Wenlong Jin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Direct Interaction ◽  
Organic Thin Film Transistors ◽  
Organic Layer ◽  
Organic Transistors ◽  
Organic Thin Film ◽  
Target Analytes ◽  
Conductive Channel ◽  
Sensing Application

By tailoring the neighboring-conductive-channel organic layer using a plasma-assisted-interfacial-grafting method, we introduced a molecular antenna on the surface of organic transistors to enable direct interaction between the semiconductors in the conductive channel and the target analytes in solution.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

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