Solution-sheared ultrathin films for highly-sensitive ammonia detection using organic thin-film transistors

2014 ◽  
Vol 2 (7) ◽  
pp. 1264 ◽  
Author(s):  
Qing Meng ◽  
Fengjiao Zhang ◽  
Yaping Zang ◽  
Dazhen Huang ◽  
Ye Zou ◽  
...  
2008 ◽  
Vol 18 (19) ◽  
pp. 2905-2912 ◽  
Author(s):  
Mi Yeon Cho ◽  
Su Jin Kim ◽  
Yoon Deok Han ◽  
Dong Hyuk Park ◽  
Kyung Hwan Kim ◽  
...  

2021 ◽  
Vol 9 (1) ◽  
pp. 270-280
Author(s):  
Rachana Acharya ◽  
Darius Günder ◽  
Tobias Breuer ◽  
Guido Schmitz ◽  
Hagen Klauk ◽  
...  

Ultrathin DNTT films are unstable due to rapid morphological changes. This work investigates the stability of ultrathin DNTT films and the fabrication of ultrathin DNTT organic transistors.


2003 ◽  
Vol 771 ◽  
Author(s):  
Tommie W. Kelley ◽  
Dawn V. Muyres ◽  
Paul F. Baude ◽  
Terry P. Smith ◽  
Todd D. Jones

AbstractWe report here methods of surface modification and device construction which consistently result in lab-scale pentacene-based TFTs with mobilities at or above 5 cm2/Vs. Surface modifications include polymeric ultrathin films presenting a passivated interface on which the semiconductor can grow. High performance TFTs have been fabricated on a variety of dielectric materials, both organic and inorganic, and are currently being implemented in manufacturable constructions. Our surface modifications have also proven useful for substituted pentacene materials and for a variety of other organic semiconductors. In addition, we report an all organic active layer, rf-powered integrated circuit. Further experiments and statistical analyses are underway to explain the elevated mobility in our samples, and efforts have been made to confirm these results through collaboration.


2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui

2013 ◽  
Vol E96.C (11) ◽  
pp. 1360-1366 ◽  
Author(s):  
Ichiro FUJIEDA ◽  
Tse Nga NG ◽  
Tomoya HOSHINO ◽  
Tomonori HANASAKI

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