Controllable magnetism driven by carrier confinement and ferroelectric polarization in a two-dimensional heterostructure

2020 ◽  
Vol 8 (48) ◽  
pp. 17342-17348
Author(s):  
Ziye Zhu ◽  
Xiaofang Chen ◽  
Wenbin Li ◽  
Jingshan Qi
Keyword(s):  
Polarization Switching ◽  
Electric Polarization ◽  
Ferroelectric Polarization ◽  
Two Dimensional ◽  
Carrier Confinement

Electric-controlled ferromagnetism could be realized in a two-dimensional ferroelectric heterostructure CuInP2S6/InSe through carrier confinement induced by electric polarization switching and the Stoner mechanism.

Theoretical investigation of nonvolatile electrical control behavior by ferroelectric polarization switching in two-dimensional MnCl3/CuInP2S6 van der Waals heterostructures

2020 ◽  
Vol 8 (13) ◽  
pp. 4534-4541 ◽  
Author(s):  
Zheng Li ◽  
Baozeng Zhou
Keyword(s):  
Theoretical Investigation ◽  
Van Der Waals ◽  
Polarization Switching ◽  
Ferroelectric Polarization ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Electrical Control ◽  
Control Behavior ◽  
Electric Signals ◽  
Data Reading

A model of atom-thick multiferroic memory whose data writing depends on ferroelectric CuInP2S6 and data reading is based on different electric signals induced by magnetoelectrical coupling.

Mechano-ferroelectric coupling: stabilization enhancement and polarization switching in bent AgBiP2Se6 monolayers

2021 ◽  
Author(s):  
Jing Shang ◽  
Congxin Xia ◽  
Chun Tang ◽  
Chun Li ◽  
Yandong Ma ◽  
...  
Keyword(s):  
Polarization Switching ◽  
Ferroelectric Polarization ◽  
Two Dimensional ◽  
Next Generation ◽  
Storage Devices

Two-dimensional ferroelectrics are core candidates for the development of next-generation non-volatile storage devices, which rely highly on ferroelectric stability and feasible approaches to manipulate the ferroelectric polarization and domain.

Ferroelectric resistive switching behavior in two-dimensional materials/BiFeO3 hetero-junctions

Nanoscale ◽  
2018 ◽  
Vol 10 (48) ◽  
pp. 23080-23086 ◽  
Author(s):  
Yang Li ◽  
Xue-Yin Sun ◽  
Cheng-Yan Xu ◽  
Jian Cao ◽  
Zhao-Yuan Sun ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Two Dimensional ◽  
Resistive Switching Behavior ◽  
Two Dimensional Materials ◽  
Interface Modulation

We presented thickness-dependent ferroelectric resistive switching in 2D/BFO heterojunctions, which stems from ferroelectric polarization induced hetero-interface modulation.

Stable electric polarization switching accompanied by magnetization reversal in B-site-substituted multiferroic BiFe0.9Co0.1O3 thin films

2020 ◽  
Vol 13 (7) ◽  
pp. 071001
Author(s):  
Kei Shigematsu ◽  
Haruki Shimizu ◽  
Marin Katsumata ◽  
Keisuke Shimizu ◽  
Hajime Yamamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetization Reversal ◽  
Polarization Switching ◽  
Electric Polarization

Ferroelectric Polarization Switching in Sodium Nitrite

1963 ◽  
Vol 18 (8) ◽  
pp. 1229-1230 ◽  
Author(s):  
Ichiro Hatta ◽  
Shozo Sawada ◽  
Yohko Asao ◽  
Taketoshi Yanagi
Keyword(s):  
Sodium Nitrite ◽  
Polarization Switching ◽  
Ferroelectric Polarization

Giant tunneling electroresistance in two-dimensional ferroelectric tunnel junctions with out-of-plane ferroelectric polarization

2020 ◽  
Vol 101 (1) ◽  
Author(s):  
Lili Kang ◽  
Peng Jiang ◽  
Hua Hao ◽  
Yanhong Zhou ◽  
Xiaohong Zheng ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Ferroelectric Polarization ◽  
Two Dimensional ◽  
Out Of Plane
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