Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy

2013 ◽  
Vol 114 (18) ◽  
pp. 183504 ◽  
Author(s):  
Quan Wang ◽  
Yanmin Zhang ◽  
Ran Hu ◽  
Daohan Ge ◽  
Naifei Ren
2021 ◽  
Vol 9 (1) ◽  
pp. 117-126
Author(s):  
Jonas Keukelier ◽  
Karl Opsomer ◽  
Thomas Nuytten ◽  
Stefanie Sergeant ◽  
Wouter Devulder ◽  
...  

Raman spectroscopy and electrical measurements are performed on sputtered GexSe1−x thin films to identify and link bond presence to electrical behaviour.


2021 ◽  
Vol 606 ◽  
pp. 412726
Author(s):  
Gabriela Gomes Miranda ◽  
Raphael Lucas de Sousa e Silva ◽  
Hermínia Veridiana dos Santos Pessoni ◽  
A. Franco

The Analyst ◽  
1994 ◽  
Vol 119 (4) ◽  
pp. 491 ◽  
Author(s):  
S. Ellahi ◽  
R. E. Hester

2013 ◽  
Vol 44 ◽  
pp. 82-90 ◽  
Author(s):  
S. Kozyukhin ◽  
M. Veres ◽  
H.P. Nguyen ◽  
A. Ingram ◽  
V. Kudoyarova

2006 ◽  
Vol 60 (10) ◽  
pp. 1097-1102 ◽  
Author(s):  
Zachary D. Schultz ◽  
Marc C. Gurau ◽  
Lee J. Richter

2012 ◽  
Vol 1477 ◽  
Author(s):  
Marco A. Zepeda ◽  
Michel Picquart ◽  
Emmanuel Haro-Poniatowski

ABSTRACTThe Laser induced oxidation process of bismuth was investigated using Raman spectroscopy. Upon laser irradiation (λ = 532 nm) pure Bismuth was transformed gradually into Bi2O3. Raman spectra of the samples showed the characteristics peaks for pure Bi located at 71 cm-1 and 96 cm-1. The oxidation process was monitored by Raman spectra with four additional bands located at about 127 cm-1, 241 cm-1, 313 cm-1 and 455 cm-1. Maintaining constant the exposure time of irradiation, the intensity of these bands depended on laser irradiation power. The presence of Bi2O3 in the sample was confirmed through by energy dispersion spectroscopy (EDS).


2003 ◽  
Vol 64 (9-10) ◽  
pp. 1989-1993 ◽  
Author(s):  
E.P. Zaretskaya ◽  
V.F. Gremenok ◽  
V. Riede ◽  
W. Schmitz ◽  
K. Bente ◽  
...  

Author(s):  
J.García López ◽  
J.C.Cheang Wong ◽  
C. Ortega ◽  
J. Siejka ◽  
I. Trimaille ◽  
...  

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