Exploiting two-dimensional hybrid perovskites incorporating secondary amines for high-performance array photodetection

2020 ◽  
Vol 8 (37) ◽  
pp. 12848-12853
Author(s):  
Tao Yang ◽  
Yaobin Li ◽  
Shiguo Han ◽  
Yi Liu ◽  
Zhiyun Xu ◽  
...  
Keyword(s):  
High Performance ◽  
Secondary Amines ◽  
Two Dimensional ◽  
Hybrid Perovskite ◽  
2D Hybrid Perovskite

We present a new 2D hybrid perovskite by alloying secondary dimethylammonium cation as the “perovskiter” into the PbI3 framework, which shows the strong in-plane photoresponses.

High performance self-powered photodetection with a low detection limit based on a two-dimensional organometallic perovskite ferroelectric

2021 ◽  
Author(s):  
Yu Ma ◽  
Jiaqi Wang ◽  
Yi Liu ◽  
Shiguo Han ◽  
Yaobin Li ◽  
...  
Keyword(s):  
Detection Limit ◽  
High Performance ◽  
Optoelectronic Device ◽  
Two Dimensional ◽  
Low Detection Limit ◽  
Hybrid Perovskite ◽  
Device Applications ◽  
Self Powered ◽  
2D Hybrid Perovskite

Self-powered photodetection with an extremely low detection limit of 82 nW cm−2 is achieved in a 2D hybrid perovskite ferroelectric. This result sheds light on future advances of ferroelectrics toward smart optoelectronic device applications.

Exploring the role of halide mixing in lead-free BZA2SnX4 two dimensional hybrid perovskites

2020 ◽  
Vol 8 (4) ◽  
pp. 1875-1886 ◽  
Author(s):  
Ambra Pisanu ◽  
Mauro Coduri ◽  
Marta Morana ◽  
Yasemin O. Ciftci ◽  
Aurora Rizzo ◽  
...  
Keyword(s):  
Lead Free ◽  
Two Dimensional ◽  
Hybrid Perovskite ◽  
2D Hybrid Perovskite

The role of halide substitution in a lead-free 2D hybrid perovskite is studied on the BZA2SnX4 (BZA = benzylammonium; X = Cl, Br, I) system, by reporting the two novel compositions BZA2SnBr4 and BZA2SnCl4.

Two-dimensional organic–inorganic hybrid perovskite field-effect transistors with polymers as bottom-gate dielectrics

2019 ◽  
Vol 7 (14) ◽  
pp. 4004-4012 ◽  
Author(s):  
Fan Zhang ◽  
Huaye Zhang ◽  
Lijie Zhu ◽  
Liang Qin ◽  
Yue Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Inorganic Hybrid ◽  
Dielectric Layers ◽  
Hybrid Perovskite ◽  
Bottom Gate

High-performance bottom-gate 2D-layered (PEA)2SnI4 field-effect transistors have been fabricated using PVA/CL-PVP as gate dielectric layers.

Synthesis of ultrathin two-dimensional organic–inorganic hybrid perovskite nanosheets for polymer field-effect transistors

2018 ◽  
Vol 6 (15) ◽  
pp. 3945-3950 ◽  
Author(s):  
Lijie Zhu ◽  
Huaye Zhang ◽  
Qipeng Lu ◽  
Yue Wang ◽  
Zhenbo Deng ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Composite Films ◽  
Two Dimensional ◽  
Inorganic Hybrid ◽  
Hybrid Perovskite

The (PEA)2PbX4(PEA = C8H9NH3, X = Cl, Br, I) nanosheets: P3HT composite films were prepared as channel layers for high performance field-effect transistors.

A two-dimensional organic–inorganic hybrid perovskite-type semiconductor: poly[(2-azaniumylethyl)trimethylphosphanium [tetra-μ-bromido-plumbate(II)]]

2019 ◽  
Vol 75 (3) ◽  
pp. 354-358 ◽  
Author(s):  
Ling Cheng ◽  
Yingjie Cao
Keyword(s):  
Three Dimensional ◽  
Two Dimensional ◽  
Inorganic Hybrid ◽  
Hybrid Perovskite ◽  
Perovskite Material ◽  
Potential Applications ◽  
Type Semiconductor ◽  
Indirect Band Gap ◽  
2D Hybrid Perovskite ◽  
Perovskite Type

Recently, with the prevalence of `perovskite fever', organic–inorganic hybrid perovskites (OHPs) have attracted intense attention due to their remarkable structural variability and highly tunable properties. In particular, the optical and electrical properties of organic–inorganic hybrid lead halides are typical of the OHP family. Besides, although three-dimensional hybrid perovskites, such as [CH3NH3]PbX 3 (X = Cl, Br or I), have been reported, the development of new organic–inorganic hybrid semiconductors is still an area in urgent need of exploration. Here, an organic–inorganic hybrid lead halide perovskite is reported, namely poly[(2-azaniumylethyl)trimethylphosphanium [tetra-μ-bromido-plumbate(II)]], {(C5H16NP)[PbBr4]} n , in which an organic cation is embedded in inorganic two-dimensional (2D) mesh layers to produce a sandwich structure. This unique sandwich 2D hybrid perovskite material shows an indirect band gap of ∼2.700 eV. The properties of this compound as a semiconductor are demonstrated by a series of optical characterizations and indicate potential applications for optical devices.

Cage-Incorporation of Secondary Amine in Ruddlesden-Popper 2D Hybrid Perovskite with Strong Photoconductivity and Polarization Response

2021 ◽  
Author(s):  
beibei wang ◽  
Huaixi Chen ◽  
Wuqian Guo ◽  
Yi Liu ◽  
Shiguo Han ◽  
...  
Keyword(s):  
Physical Properties ◽  
Secondary Amine ◽  
Structural Diversity ◽  
Two Dimensional ◽  
Polarization Response ◽  
Hybrid Perovskite ◽  
2D Hybrid Perovskite

Two-dimensional (2D) Ruddlesden-Popper hybrid perovskites (RPHPs) have shown enormous potentials for photoelectric applications, owing to their advantages of structural diversity and unique physical properties. Despite extensive studies, the cage-incorporation of...

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals High performance self-powered photodetector based on 1D Te-2D WS2 mixed-dimensional heterostructure

2021 ◽  
Author(s):  
Lixiang Han ◽  
Mengmeng Yang ◽  
Peiting Wen ◽  
Wei Gao ◽  
nengjie huo ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Sharp Interface ◽  
Two Dimensional ◽  
High Quality ◽  
One Dimensional ◽  
Self Powered

One dimensional (1D)-two dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. The...

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