Synthesis of ultrathin two-dimensional organic–inorganic hybrid perovskite nanosheets for polymer field-effect transistors

2018 ◽  
Vol 6 (15) ◽  
pp. 3945-3950 ◽  
Author(s):  
Lijie Zhu ◽  
Huaye Zhang ◽  
Qipeng Lu ◽  
Yue Wang ◽  
Zhenbo Deng ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Composite Films ◽  
Two Dimensional ◽  
Inorganic Hybrid ◽  
Hybrid Perovskite

The (PEA)2PbX4(PEA = C8H9NH3, X = Cl, Br, I) nanosheets: P3HT composite films were prepared as channel layers for high performance field-effect transistors.

Two-dimensional organic–inorganic hybrid perovskite field-effect transistors with polymers as bottom-gate dielectrics

2019 ◽  
Vol 7 (14) ◽  
pp. 4004-4012 ◽  
Author(s):  
Fan Zhang ◽  
Huaye Zhang ◽  
Lijie Zhu ◽  
Liang Qin ◽  
Yue Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Inorganic Hybrid ◽  
Dielectric Layers ◽  
Hybrid Perovskite ◽  
Bottom Gate

High-performance bottom-gate 2D-layered (PEA)2SnI4 field-effect transistors have been fabricated using PVA/CL-PVP as gate dielectric layers.

High-performance organic–inorganic hybrid perovskite thin-film field-effect transistors

2018 ◽  
Vol 124 (9) ◽  
Author(s):  
Linlin Tang ◽  
Yuze Peng ◽  
Zhou Zhou ◽  
Yuxiang Wu ◽  
Jian Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Inorganic Hybrid ◽  
Hybrid Perovskite

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals Flexible Organic/Inorganic Hybrid Field-Effect Transistors with High Performance and Operational Stability

2016 ◽  
Vol 9 (1) ◽  
pp. 573-584 ◽  
Author(s):  
Abhishek S. Dahiya ◽  
Charles Opoku ◽  
Guylaine Poulin-Vittrant ◽  
Nicolas Camara ◽  
Christophe Daumont ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Operational Stability ◽  
Inorganic Hybrid

Solution-processed and High-performance Ionic-paper Gated Field-effect Transistors from Two-dimensional Layered Semiconductor Nanosheets for High Thermal Resolution

2022 ◽  
Author(s):  
Guokeng Liu ◽  
Chunyang Jin ◽  
Binlai Hu ◽  
Lihua Zhang ◽  
Guozheng Zeng ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Building Blocks ◽  
Two Dimensional ◽  
Layered Semiconductor ◽  
Solution Processed ◽  
Scalable Production

The remarkable properties of layered semiconductor nanosheets (LSNs), such as scalable production, bandgap tunability and mechanical flexibility have promoted them as promising building blocks for nanoelectronics and bioelectronics. However, it...

Effects of polymer grain boundary passivation on organic–inorganic hybrid perovskite field-effect transistors

2021 ◽  
Vol 119 (18) ◽  
pp. 183303
Author(s):  
Yuchen Zhou ◽  
Nikhil Tiwale ◽  
Yifan Yin ◽  
Ashwanth Subramanian ◽  
Miriam H. Rafailovich ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Inorganic Hybrid ◽  
Hybrid Perovskite ◽  
Polymer Grain

High-Performance and Ultralow-Noise Two-Dimensional Heterostructure Field-Effect Transistors with One-Dimensional Electrical Contacts

2021 ◽  
Vol 3 (9) ◽  
pp. 4126-4134
Author(s):  
Aroop K. Behera ◽  
Charles Thomas Harris ◽  
Douglas V. Pete ◽  
Collin J. Delker ◽  
Per Erik Vullum ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Electrical Contacts ◽  
Two Dimensional ◽  
One Dimensional ◽  
Heterostructure Field Effect Transistors

High-performance, hysteresis free, ambipolar hybrid perovskite based field-effect transistors

2017 ◽  
Author(s):  
Noelia Devesa Canicoba ◽  
Kasun Fernando ◽  
Jean-Christophe Blancon ◽  
Fangze Liu ◽  
Laurent Le Brizoual ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Hybrid Perovskite

High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets

2017 ◽  
Vol 110 (4) ◽  
pp. 043505 ◽  
Author(s):  
Hongzheng Tian ◽  
Xudong Wang ◽  
Yuankun Zhu ◽  
Lei Liao ◽  
Xianying Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Zno Nanosheets
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