Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn–Al–O Interfaces Fabricated by Atomic Layer Deposition

2017 ◽  
Vol 9 (13) ◽  
pp. 11711-11720 ◽  
Author(s):  
Yang Li ◽  
Rui Yao ◽  
Huanhuan Wang ◽  
Xiaoming Wu ◽  
Jinzhu Wu ◽  
...  
2016 ◽  
Vol 109 (22) ◽  
pp. 222103 ◽  
Author(s):  
A. Shaw ◽  
J. S. Wrench ◽  
J. D. Jin ◽  
T. J. Whittles ◽  
I. Z. Mitrovic ◽  
...  

2021 ◽  
Vol 52 (S2) ◽  
pp. 472-476
Author(s):  
Qi Li ◽  
Huijin Li ◽  
Junchen Dong ◽  
Jingyi Wang ◽  
Dedong Han ◽  
...  

RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.


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