The enhancement of a self-powered UV photodetector based on vertically aligned Ag-modified ZnO nanowires

RSC Advances ◽  
2015 ◽  
Vol 5 (82) ◽  
pp. 66738-66741 ◽  
Author(s):  
Yiyu Zeng ◽  
Xinhua Pan ◽  
Wen Dai ◽  
Yunchao Chen ◽  
Zhizhen Ye

A Ag nanoparticle-modified ZnO NWs based UV detector displays an excellent performance in UV detection such as high responsivity and fast response time.

2021 ◽  
Vol 9 (14) ◽  
pp. 4799-4807
Author(s):  
Yong Zhang ◽  
Weidong Song

P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.


2020 ◽  
Vol 8 (35) ◽  
pp. 12148-12154 ◽  
Author(s):  
Yifan Li ◽  
Yating Zhang ◽  
Tengteng Li ◽  
Xin Tang ◽  
Mengyao Li ◽  
...  

A novel self-powered NIR and THz PTE PD based on a (MAPbI3/PEDOT:PSS) composite with a rapid response time of 28 μs.


RSC Advances ◽  
2018 ◽  
Vol 8 (58) ◽  
pp. 33174-33179 ◽  
Author(s):  
Xiaoli Peng ◽  
Weihao Wang ◽  
Yiyu Zeng ◽  
Xinhua Pan ◽  
Zhizhen Ye ◽  
...  

A flexible UV detector exhibits high performance. The photoresponse of the device under different upward angles (tensile strain) and downward angles (compressive strain) were studied. A 163% change in responsivity was obtained when the downward angle reached 60°.


2021 ◽  
Author(s):  
Yong Lei ◽  
Xiao-Zhan Yang ◽  
Wenlin Feng

Abstract Van der Waals heterostructures based on the combination of 2D transition metal dichalcogenides (TMDCs) and conventional semiconductors offer new opportunities for the next generation of optoelectronics. In this work, the sulfurization of Mo film is used to synthesize vertically-aligned MoS2 nanofilm (V-MoS2) with wafer-size and layer controllability. The V-MoS2/n-Si heterojunction was fabricated by using a 20-nm thickness V-MoS2, and the self-powered broadband photodetectors covering from deep ultraviolet to near infrared is achieved. The device shows superior responsivity (5.06 mA/W), good photodetectivity (5.36×1011 Jones) and high on/off ratio Ion/Ioff (8.31 ×103 at 254 nm). Furthermore, the V-MoS2/n-Si heterojunction device presents a fast response speed with the rise time and fall time being 54.53 ms and 97.83 ms, respectiveely. The high photoelectric performances could be attributed to the high-quality heterojunction between the V-MoS2 and n-Si. These findings suggest that the V-MoS2/n-Si heterojunction has great potential applications in the deep ultraviolet-near infrared detection field, and might be used as a part of the construction of integrated optoelectronic systems.


2020 ◽  
Vol 45 (17) ◽  
pp. 4843
Author(s):  
Yulin Zheng ◽  
Xin Tang ◽  
Yuhui Yang ◽  
Wenliang Wang ◽  
Guoqiang Li

2020 ◽  
Vol 315 ◽  
pp. 112354 ◽  
Author(s):  
Dongyang Han ◽  
Kewei Liu ◽  
Qichao Hou ◽  
Xing Chen ◽  
Jialin Yang ◽  
...  

2020 ◽  
Vol 8 (13) ◽  
pp. 4502-4509 ◽  
Author(s):  
Zuyong Yan ◽  
Shan Li ◽  
Zeng Liu ◽  
Yusong Zhi ◽  
Jie Dai ◽  
...  

A β-Ga2O3/spiro-MeOTAD organic–inorganic p–n heterojunction was fabricated for use in a high sensitivity and fast response self-powered solar-blind UV photodetector.


2020 ◽  
Vol 8 (4) ◽  
pp. 1353-1358 ◽  
Author(s):  
Xiang Li ◽  
Shiyong Gao ◽  
Guangning Wang ◽  
Zhikun Xu ◽  
Shujie Jiao ◽  
...  

Ag nanoparticles were deposited onto TiO2 nanotubes and a ZnS layer was further fabricated on the surface of the TiO2/Ag nanotubes at room temperature to form a self-powered UV photodetector.


2018 ◽  
Vol 26 (3) ◽  
pp. 318-327
Author(s):  
Haider Al-Mumen

Titanium dioxide Nano particles have been used as a core material for the design of low-cost sustainable power source, the dye sensitized cell. In this work, dye sensitized cell was investigated to be used as a self-powered ultra violet light detector in a data acquisition system. To enhance the detector robustness, the device was sealed using cross-linked photo resist to isolate it from the environmental effects. The detector was tested in air as well as in water to proof its characteristics in various environmental conditions. High responsivity and fast response were achieved for both discrete and continuous ultraviolet (UV) illuminations. To prove the self-powered property of the sensor, it was interfaced to a microcontroller. Our experimental results confirmed that there is no need of intermediate electronics such as signal conditioning in the interfacing circuit. Furthermore, the detector observed obvious selectivity for different light colors. This characteristic makes it candidate for the development of color sensors.


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