Colloidal ZnTe quantum dots-based photocathode with metal-insulator-semiconductor structure towards solar-driven CO2 reduction to tunable syngas

2021 ◽  
Author(s):  
Peng Wen ◽  
Hui Li ◽  
Xiao Ma ◽  
Renbo Lei ◽  
Xinwei Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Energy Saving ◽  
Band Gap ◽  
Co2 Reduction ◽  
Solar Fuels ◽  
Environmentally Benign ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Type Semiconductor ◽  
P Type

Producing solar fuels via photoelectrochemical (PEC) CO2 reduction is an energy-saving and environmentally benign technology. As a p-type semiconductor, ZnTe has drawn much attention for the suitable band gap of...

Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

1989 ◽  
Vol 168 (2) ◽  
pp. 157-163 ◽  
Author(s):  
B. Ullrich ◽  
F. Kuchar ◽  
R. Meisels ◽  
F. Olcaytug ◽  
A. Jachimowicz
Keyword(s):  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage ◽  
P Type

Field effect studies on p-type PbTe metal/insulator/semiconductor structures

1982 ◽  
Vol 92 (3) ◽  
pp. 295-301
Author(s):  
A.L. Dawar ◽  
O.P. Taneja ◽  
S.K. Paradkar ◽  
Partap Kumar ◽  
P.C. Mathur
Keyword(s):  
Field Effect ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
P Type

Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors

2015 ◽  
Vol 242 ◽  
pp. 61-66
Author(s):  
Eddy Simoen ◽  
Valentina Ferro ◽  
Barry O’Sullivan
Keyword(s):  
Minority Carrier ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Silicon Layer ◽  
Si Substrate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Transient Spectroscopy ◽  
P Type ◽  
Mis Capacitors

Deep Level Transient Spectroscopy (DLTS) has been applied to Metal-Insulator-Semiconductor (MIS) capacitors, consisting of a p+ or n+ a-Si:H gate on an intrinsic i-a-Si:H passivation layer deposited on crystalline silicon n-or p-type substrates. It is shown that the type of gate has a pronounced impact on the obtained spectra, whereby both the kind of defects (dangling bonds at the a-Si:H/(100) c-Si interface (Pb0 defects) or in the amorphous silicon layer (D defects) and their relative importance (peak amplitude) may be varied. The highest trap densities have been found for the p+ a-Si:H gate capacitors on an n-type Si substrate. In addition, the spectra may exhibit unexpected negative peaks, suggesting minority carrier capture. These features are tentatively associated with interface states at the p+ or n+ a-Si:H/i-a-Si:H interface. Their absence in Al-gate capacitors is in support of this hypothesis.

scholarly journals Understanding doping anomalies in degenerate p-type semiconductor LaCuOSe

2014 ◽  
Vol 2 (17) ◽  
pp. 3429-3438 ◽  
Author(s):  
David O. Scanlon ◽  
John Buckeridge ◽  
C. Richard A. Catlow ◽  
Graeme W. Watson
Keyword(s):  
Dft Calculations ◽  
Band Gap ◽  
State Of The Art ◽  
Wide Band ◽  
Defect Chemistry ◽  
Wide Band Gap ◽  
Type Semiconductor ◽  
P Type

Using state-of-the-art hybrid DFT calculations we explain the defect chemistry of LaCuOSe, a poorly understood wide band gap p-type conductor.

Enhanced thermoelectric performance of InTe through Pb doping

2021 ◽  
Author(s):  
Shantanu Misra ◽  
Adèle Léon ◽  
Petr Levinsky ◽  
Jiří Hejtmánek ◽  
Bertrand Lenoir ◽  
...  
Keyword(s):  
Energy Conversion ◽  
Band Gap ◽  
Narrow Band ◽  
Thermoelectric Performance ◽  
Chalcogenide Semiconductors ◽  
Type Semiconductor ◽  
P Type ◽  
Pb Doping

Chalcogenide semiconductors continue to be of prime interest for designing novel efficient materials for energy-conversion applications. Among them, the narrow-band-gap p-type semiconductor InTe exhibits high thermoelectric performance that mostly stems...

One-step electrodeposition of CuInxGa1−xSe2 thin films from a mixture system of ionic liquid and ethanol

2015 ◽  
Vol 39 (10) ◽  
pp. 7742-7745 ◽  
Author(s):  
Ye Lian ◽  
Shanshan Ji ◽  
Lei Zhao ◽  
Jie Zhang ◽  
Peixia Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ionic Liquid ◽  
Band Gap ◽  
High Crystalline Quality ◽  
Cigs Thin Film ◽  
Type Semiconductor ◽  
One Step ◽  
P Type ◽  
Mixture System

Synthesizing high crystalline quality p-type semiconductor CIGS thin film with a band gap of 1.41 eV by galvanostatic electrodeposition.

Metal‐insulator‐semiconductor structures on p‐type GaAs with low interface state density

1996 ◽  
Vol 69 (2) ◽  
pp. 230-232 ◽  
Author(s):  
Zhi Chen ◽  
Dae‐Gyu Park ◽  
Francke Stengal ◽  
S. Noor Mohammad ◽  
Hadis Morkoç
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
P Type
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