scholarly journals Understanding doping anomalies in degenerate p-type semiconductor LaCuOSe

2014 ◽  
Vol 2 (17) ◽  
pp. 3429-3438 ◽  
Author(s):  
David O. Scanlon ◽  
John Buckeridge ◽  
C. Richard A. Catlow ◽  
Graeme W. Watson
Keyword(s):  
Dft Calculations ◽  
Band Gap ◽  
State Of The Art ◽  
Wide Band ◽  
Defect Chemistry ◽  
Wide Band Gap ◽  
Type Semiconductor ◽  
P Type

Using state-of-the-art hybrid DFT calculations we explain the defect chemistry of LaCuOSe, a poorly understood wide band gap p-type conductor.

Wide band gap and p-type conductive Cu-Nb-O films

2011 ◽  
Vol 5 (4) ◽  
pp. 153-155 ◽  
Author(s):  
Seiji Yamazoe ◽  
Shunsuke Yanagimoto ◽  
Takahiro Wada
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type

A pathway to p-type wide-band-gap semiconductors

2009 ◽  
Vol 95 (17) ◽  
pp. 172109 ◽  
Author(s):  
Anderson Janotti ◽  
Eric Snow ◽  
Chris G. Van de Walle
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
P Type

scholarly journals A wide-band-gap p-type thermoelectric material based on quaternary chalcogenides of Cu2ZnSnQ4 (Q=S,Se)

2009 ◽  
Vol 94 (20) ◽  
pp. 202103 ◽  
Author(s):  
Min-Ling Liu ◽  
Fu-Qiang Huang ◽  
Li-Dong Chen ◽  
I-Wei Chen
Keyword(s):  
Band Gap ◽  
Thermoelectric Material ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type

scholarly journals GaN Based p-n Structures Grown on SiC Substrates

1996 ◽  
Vol 1 ◽  
Author(s):  
V.A. Dmitriev
Keyword(s):  
Band Gap ◽  
Bright Light ◽  
Wide Band ◽  
Injection Laser ◽  
Light Emitters ◽  
Wide Band Gap ◽  
High Quality ◽  
P Type

Wide band gap nitrides(InN, GaN, AlN) have been considered promising optoelectronics materials for many years [1]. Recently two main technological problems in the nitrides were overcome: (1)high quality layers has been grown on both sapphire and SiC substrates and(2) p-type GaN and AlGaN material has been obtained. These achievements resulted in the fabrication of bright light emitters in the violet, blue and green spectral regions [2].First injection laser has been demonstrated [3]. This paper reviews results obtained over the last few years on nitride p-n junctions, particularly on GaN based p-n junctions grown on SiC substrates. We will consider GaN p-n junctions, AlGaN p-n junctions, GaN and AlGaN p-i-n structures, and, finally, GaN/SiC p-n structures.

Computational Prediction and Experimental Realization of p-Type Carriers in the Wide-Band-Gap Oxide SrZn1–xLixO2

2018 ◽  
Vol 57 (19) ◽  
pp. 11874-11883 ◽  
Author(s):  
Christos A. Tzitzeklis ◽  
Jyoti K. Gupta ◽  
Matthew S. Dyer ◽  
Troy D. Manning ◽  
Michael J. Pitcher ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Computational Prediction ◽  
Wide Band Gap ◽  
Experimental Realization ◽  
P Type

Theoretical and experimental studies on wide-band-gap p-type conductive BaCuSeF and related compounds

2015 ◽  
Vol 54 (8S1) ◽  
pp. 08KC07 ◽  
Author(s):  
Hiroshi Sakakima ◽  
Mikihiko Nishitani ◽  
Koichi Yamamoto ◽  
Takahiro Wada
Keyword(s):  
Band Gap ◽  
Experimental Studies ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type ◽  
Related Compounds

p-type conductivity in wide-band-gap BaCuQF (Q=S,Se)

2003 ◽  
Vol 82 (17) ◽  
pp. 2814-2816 ◽  
Author(s):  
Hiroshi Yanagi ◽  
Janet Tate ◽  
Sangmoon Park ◽  
Cheol-Hee Park ◽  
Douglas A. Keszler
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Type Conductivity ◽  
P Type

Challenges and State-of-the-Art of Oxides on SiC

2000 ◽  
Vol 640 ◽  
Author(s):  
Lori Lipkin ◽  
Mrinal Das ◽  
John Palmour
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
High Voltage ◽  
State Of The Art ◽  
Wide Band ◽  
High Current ◽  
Power Devices ◽  
Wide Band Gap ◽  
Single Crystal Sic ◽  
Lower Temperature

ABSTRACTSingle crystal SiC is a wide band-gap semiconductor with material characteristics that make it quite suitable for high voltage and high current applications. However, these devices are currently limited by their passivation. Significant improvements have been made with oxides on SiC. The most notable oxide processes are the re-oxidation anneal, a stacked ONO dielectric, and nitridation using an NO or N2O anneal. Additional improvements in lateral MOSFET mobility have been achieved using a surface channel implant, and lower temperature implant activation anneals. However, the passivation remains a significant limitation for SiC power devices.

P-type doping of organic wide band gap materials by transition metal oxides: A case-study on Molybdenum trioxide

2009 ◽  
Vol 10 (5) ◽  
pp. 932-938 ◽  
Author(s):  
Michael Kröger ◽  
Sami Hamwi ◽  
Jens Meyer ◽  
Thomas Riedl ◽  
Wolfgang Kowalsky ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Band Gap ◽  
Transition Metal Oxides ◽  
Molybdenum Trioxide ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type
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