Template effects in Cu(i)–Bi(iii) iodide double perovskites: a study of crystal structure, film orientation, band gap and photocurrent response

2020 ◽  
Vol 8 (15) ◽  
pp. 7288-7296 ◽  
Author(s):  
Le-Yu Bi ◽  
Tian-Li Hu ◽  
Mu-Qing Li ◽  
Bo-Kai Ling ◽  
Mohamed Saber Lassoued ◽  
...  
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Band Gap ◽  
Energy Band ◽  
Band Gaps ◽  
Double Perovskites ◽  
Photocurrent Response ◽  
Bismuth Iodide ◽  
Structural Dimensions

Structural dimensions, energy band gaps and thin film orientations are revealed to be amine-dependent in seven newly prepared cuprous–bismuth iodide double perovskites.

Analysis of Defects and Surface Roughness on the Hydrogenated Amorphous Silicon (a-Si:H) Intrinsic Thin Film for Solar Cells

2019 ◽  
Vol 966 ◽  
pp. 398-403
Author(s):  
Yoyok Cahyono ◽  
Novita Dwi Purnamasari ◽  
Mochamad Zainuri ◽  
Suminar Pratapa ◽  
Darminto
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Solar Cells ◽  
Band Gap ◽  
Indium Tin Oxide ◽  
Energy Band ◽  
Thin Layers ◽  
Oxide Glass ◽  
Energy Band Gap ◽  
Hydrogen Dilution

Effect of defect - through observation of energy absorption Urbach, on deposition rate, energy band gap, and surface roughness of intrinsic thin film are investigated using Radio Frequency Plasma Enhance Chemical Vapor Deposition (RF-PECVD). Films are grown on ITO (Indium Tin Oxide) glass substrate. Analysis of energy band gap is conducted to determine changes in the structure of a thin film of a-Si:H. Energy band gap is important to determine the portion of the spectrum of sunlight that is absorbed solar cells. From the characterization using UV-Vis spectrometer and the Tauc’s plot method, the width of the resulting energy band gap is greater if the hydrogen dilution is increased. It can be shown that the increase of the hydrogen dilution, will increase the energy band gap, and the surface roughness of thin layers. Instead, the improvement of the hydrogen dilution decrease the rate of deposition and Urbach energy. It is estimated that with greater hydrogen dilution, an intrinsic thin film of a-Si:H is more conductive for more reduction in residual of band tail defects or dangling bond defects.

scholarly journals Influence of substrate temperature and deposition time in energy band gap characteristic of lead sulfide thin film

2021 ◽  
Vol 2034 (1) ◽  
pp. 012026
Author(s):  
A A Faremi ◽  
M A Adekoya ◽  
S S Oluyamo ◽  
P A Adeyemo ◽  
A T Akindadelo ◽  
...  
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Band Gap ◽  
Lead Sulfide ◽  
Energy Band ◽  
Deposition Time ◽  
Energy Band Gap ◽  
Influence Of Substrate

An energy band engineering design to enlarge the band gap of KTiOPO4 (KTP)-type sulfates via aliovalent substitution

2019 ◽  
Vol 7 (26) ◽  
pp. 8131-8138 ◽  
Author(s):  
Fei Yang ◽  
Lijuan Huang ◽  
Xiaoyu Zhao ◽  
Ling Huang ◽  
Daojiang Gao ◽  
...  
Keyword(s):  
Band Gap ◽  
Engineering Design ◽  
Energy Band ◽  
Band Gaps ◽  
Band Engineering ◽  
Aliovalent Substitution

The two fluoride sulfates RbSnFSO4 and RbSbF2SO4 derived from the famous commercial crystal KTiOPO4via aliovalent substitution exhibited remarkably enlarged band gaps.

Electromagnetic Radiation Effect on ZnO Nanocrystallites

2011 ◽  
Vol 312-315 ◽  
pp. 836-841 ◽  
Author(s):  
L. Sepet ◽  
N. Baydogan ◽  
Huseyin Cimenoglu ◽  
E.S. Kayali ◽  
A.B. Tugrul ◽  
...  
Keyword(s):  
Thin Film ◽  
Electromagnetic Radiation ◽  
Band Gap ◽  
Absorption Edge ◽  
Energy Band ◽  
Radiation Effect ◽  
Absorbed Dose ◽  
Energy Band Gap ◽  
Absorption Edges

The changes on energy band gap at induced ZnO nanocrystallite thin film have investigated with the increase of absorbed dose. Irradiated ZnO nanocrystallite thin film exhibiting different absorption edges could adjust the transmittance of energetic electromagnetic radiation. The variations on absorption edge due to energy band gap were controlled by the absorbed dose.

Two-dimensional lead-free iodide-based hybrid double perovskites: crystal growth, thin-film preparation and photocurrent responses

2019 ◽  
Vol 7 (34) ◽  
pp. 19662-19667 ◽  
Author(s):  
Le-Yu Bi ◽  
Yue-Qiao Hu ◽  
Mu-Qing Li ◽  
Tian-Li Hu ◽  
Hao-Lan Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Crystal Growth ◽  
Lead Free ◽  
Double Perovskites ◽  
Two Dimensional ◽  
Photocurrent Response ◽  
Semiconducting Properties ◽  
Thin Film Preparation ◽  
Film Preparation

Herein, lead-free layered iodide double perovskites (C6H16N2)2MBiI8 (M = Ag/Cu) were synthesized, which showed typical semiconducting properties and obvious photocurrent response.

Thickness Dependent on Energy Band Gap and Electrical Conductivity of Undoped Conjugated Polymer Thin Films

2016 ◽  
Vol 846 ◽  
pp. 620-625 ◽  
Author(s):  
Hamizah Nadia Alias@Yusof ◽  
Hasiah Salleh ◽  
Mohd Ikmar Nizam Mohamad Isa
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Band Gap ◽  
Energy Band ◽  
Conjugated Polymer ◽  
Polymer Thin Films ◽  
Energy Band Gap ◽  
Lower Energy Band ◽  
Ito Glass

Conjugated polymers have been widely used for electronic purpose applications due to their numerous advantages. This has led many researches to pay their major attention in studying on characteristics of conjugated polymer thin films. The purpose of this study was to investigate the effect of undoped conjugated polymer thin films on their optical and electrical properties. Poly(3-thiophene acetic acid), Polypyrrole and Polythiophene thin film was fabricated on ITO glass substrate by using EIS. Film thickness, energy band gap and electrical conductivity of thin films were characterized by using profilometer, ultraviolet-visible spectrometer and four point probe method respectively. The thickness of each thin film varied between 50.534 nm to 97.03 nm. The result has shown that thicker film has lower energy band gap compared to the thinner one. However the electrical conductivity showed an opposite behavior.

The Characteristics of ZnO Nanorods According to Growth Concentration on PES Substrate

2015 ◽  
Vol 754-755 ◽  
pp. 498-501
Author(s):  
Hyun Min Lee ◽  
Sang Hyun Kim ◽  
Jae Heon Ock ◽  
Nak Won Jang ◽  
Hong Seung Kim
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Surface Morphology ◽  
Band Gap ◽  
Epitaxial Growth ◽  
Zno Nanorods ◽  
Zno Thin Film ◽  
Electrical Characteristics ◽  
Uv Visible

In particular, the PES substrate, the crystal structure of the amorphous as well as the surface morphology is not good. So research of thin films growth for epitaxial growth by the use of a buffer layer on the amorphous PES substrate is essential. Therefore, in this study, we deposited ZnO thin-film on PES substrate, and grown ZnO nanorods at various ZnO concentrations during 1 hour. We used SEM, XRD, and HP 4145B for observe the structural and electrical characteristics of ZnO nanorods. UV-visible spectrometer was used to get the band gap and transmittance.

Structure, Magnetic Property and Energy Band Gap of Fe-Doped NiO Nanoparticles Prepared by Co-Precipitation Method

2017 ◽  
Vol 751 ◽  
pp. 379-383 ◽  
Author(s):  
Buppachat Toboonsung
Keyword(s):  
Crystal Structure ◽  
Band Gap ◽  
Energy Band ◽  
Precipitation Method ◽  
Precipitation Process ◽  
X Rays ◽  
Nio Nanoparticles ◽  
Energy Band Gap ◽  
Air Atmosphere ◽  
Co Precipitation

Fe-doped NiO nanoparticles was prepared by the co-precipitation method. The precipitation solution were used the concentration of FeSO4 mixing NiCl2 for 0.5 M. The precipitation process was used a magnetic stirrer of 1100 rpm, a temperature of 30-60 OC for 0.5 h and the dropping a NaOH of 0.5 M in the mixing solution. The precipitate product was dried at the temperature of 120 OC for 9 h and calcined in a furnace at the temperature of 400 OC for 4 h in air atmosphere. The powder product was analyzed a crystal structure by a x-rays diffractometer, calculated an energy band gap by UV-VIS spectrophotometer, measured a magnetic properties by a vibrating sample magnetometer and explained morphology by a scanning electron microscope. It was found that the crystal structure was shown face center cubic. The nanoparticles in the range of 30-100 nm was observed the morphology of the optimum product. However, the coercive, the magnetic moment and the energy band gap was found the optimum at the doping Fe of 8 wt% at the precipitation temperature of 40 OC.

Tunability of conductivity type and energy band gap of CdTe thin film in the electrodeposition technique

2020 ◽  
Author(s):  
Sunday Samuel Oluyamo ◽  
Abass Akande Faremi ◽  
Olajide Ibukun-Olu Olusola ◽  
Yisau Adelaja Odusote
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Energy Band ◽  
Cdte Thin Film ◽  
Electrodeposition Technique ◽  
Energy Band Gap ◽  
Conductivity Type
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