Tunability of conductivity type and energy band gap of CdTe thin film in the electrodeposition technique

2020 ◽  
Author(s):  
Sunday Samuel Oluyamo ◽  
Abass Akande Faremi ◽  
Olajide Ibukun-Olu Olusola ◽  
Yisau Adelaja Odusote
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Energy Band ◽  
Cdte Thin Film ◽  
Electrodeposition Technique ◽  
Energy Band Gap ◽  
Conductivity Type

scholarly journals Optoelectronics applications of electrodeposited p- and n-type Al2Se3 thin films

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
A. A. Faremi ◽  
S. S. Oluyamo ◽  
O. Olubosede ◽  
I. O. Olusola ◽  
M. A. Adekoya ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Gap ◽  
Energy Band ◽  
Selenium Dioxide ◽  
Photoelectrochemical Cells ◽  
Energy Band Gap ◽  
Cathodic Deposition ◽  
Conductivity Type ◽  
P Type

Abstract In this paper, energy band gaps and electrical conductivity based on aluminum selenide (Al2Se3) thin films are synthesized electrochemically using cathodic deposition technique, with graphite and carbon as cathode and anode, respectively. Synthesis is done at 353 K from an aqueous solution of analytical grade selenium dioxide (SeO2), and aluminum chloride (AlCl2·7H2O). Junctions-based Al2Se3 thin films from a controlled medium of pH 2.0 are deposited on fluorine-doped tin oxide (FTO) substrate using potential voltages varying from 1,000 mV to 1,400 mV and 3 minutes −15 minutes respectively. The films were characterized for optical properties and electrical conductivity using UV-vis and photoelectrochemical cells (PEC) spectroscopy. The PEC reveals a transition in the conduction of the films from p-type to n-type as the potential voltage varies. The energy band gap reduces from 3.2 eV to 2.9 eV with an increase in voltage and 3.3 eV to 2.7 eV with increase in time. These variations indicate successful fabrication of junction-based Al2Se3 thin films with noticeable transition in the conductivity type and energy band gap of the materials. Consequently, the fabricated Al2Se3 can find useful applications in optoelectronic devices.

Analysis of Defects and Surface Roughness on the Hydrogenated Amorphous Silicon (a-Si:H) Intrinsic Thin Film for Solar Cells

2019 ◽  
Vol 966 ◽  
pp. 398-403
Author(s):  
Yoyok Cahyono ◽  
Novita Dwi Purnamasari ◽  
Mochamad Zainuri ◽  
Suminar Pratapa ◽  
Darminto
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Solar Cells ◽  
Band Gap ◽  
Indium Tin Oxide ◽  
Energy Band ◽  
Thin Layers ◽  
Oxide Glass ◽  
Energy Band Gap ◽  
Hydrogen Dilution

Effect of defect - through observation of energy absorption Urbach, on deposition rate, energy band gap, and surface roughness of intrinsic thin film are investigated using Radio Frequency Plasma Enhance Chemical Vapor Deposition (RF-PECVD). Films are grown on ITO (Indium Tin Oxide) glass substrate. Analysis of energy band gap is conducted to determine changes in the structure of a thin film of a-Si:H. Energy band gap is important to determine the portion of the spectrum of sunlight that is absorbed solar cells. From the characterization using UV-Vis spectrometer and the Tauc’s plot method, the width of the resulting energy band gap is greater if the hydrogen dilution is increased. It can be shown that the increase of the hydrogen dilution, will increase the energy band gap, and the surface roughness of thin layers. Instead, the improvement of the hydrogen dilution decrease the rate of deposition and Urbach energy. It is estimated that with greater hydrogen dilution, an intrinsic thin film of a-Si:H is more conductive for more reduction in residual of band tail defects or dangling bond defects.

scholarly journals Influence of substrate temperature and deposition time in energy band gap characteristic of lead sulfide thin film

2021 ◽  
Vol 2034 (1) ◽  
pp. 012026
Author(s):  
A A Faremi ◽  
M A Adekoya ◽  
S S Oluyamo ◽  
P A Adeyemo ◽  
A T Akindadelo ◽  
...  
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Band Gap ◽  
Lead Sulfide ◽  
Energy Band ◽  
Deposition Time ◽  
Energy Band Gap ◽  
Influence Of Substrate

Electromagnetic Radiation Effect on ZnO Nanocrystallites

2011 ◽  
Vol 312-315 ◽  
pp. 836-841 ◽  
Author(s):  
L. Sepet ◽  
N. Baydogan ◽  
Huseyin Cimenoglu ◽  
E.S. Kayali ◽  
A.B. Tugrul ◽  
...  
Keyword(s):  
Thin Film ◽  
Electromagnetic Radiation ◽  
Band Gap ◽  
Absorption Edge ◽  
Energy Band ◽  
Radiation Effect ◽  
Absorbed Dose ◽  
Energy Band Gap ◽  
Absorption Edges

The changes on energy band gap at induced ZnO nanocrystallite thin film have investigated with the increase of absorbed dose. Irradiated ZnO nanocrystallite thin film exhibiting different absorption edges could adjust the transmittance of energetic electromagnetic radiation. The variations on absorption edge due to energy band gap were controlled by the absorbed dose.

Thickness Dependent on Energy Band Gap and Electrical Conductivity of Undoped Conjugated Polymer Thin Films

2016 ◽  
Vol 846 ◽  
pp. 620-625 ◽  
Author(s):  
Hamizah Nadia Alias@Yusof ◽  
Hasiah Salleh ◽  
Mohd Ikmar Nizam Mohamad Isa
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Band Gap ◽  
Energy Band ◽  
Conjugated Polymer ◽  
Polymer Thin Films ◽  
Energy Band Gap ◽  
Lower Energy Band ◽  
Ito Glass

Conjugated polymers have been widely used for electronic purpose applications due to their numerous advantages. This has led many researches to pay their major attention in studying on characteristics of conjugated polymer thin films. The purpose of this study was to investigate the effect of undoped conjugated polymer thin films on their optical and electrical properties. Poly(3-thiophene acetic acid), Polypyrrole and Polythiophene thin film was fabricated on ITO glass substrate by using EIS. Film thickness, energy band gap and electrical conductivity of thin films were characterized by using profilometer, ultraviolet-visible spectrometer and four point probe method respectively. The thickness of each thin film varied between 50.534 nm to 97.03 nm. The result has shown that thicker film has lower energy band gap compared to the thinner one. However the electrical conductivity showed an opposite behavior.

scholarly journals Ultra-optical characterization of thin film solar cells materials using core/shell absorber layer

2022 ◽  
Vol 12 (2) ◽  
pp. 1377
Author(s):  
Ahmed Thabet ◽  
Safaa Abdelhady ◽  
Youssef Mobarak
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Quantum Dot ◽  
Band Gap ◽  
Energy Band ◽  
Absorber Layer ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Core Shell ◽  
Energy Band Gap

<span>This paper investigates on new design of heterojunction quantum dot (HJQD) photovoltaics solar cells CdS/PbS that is based on quantum dot metallics PbS core/shell absorber layer and quantum dot window layer. It has been enhanced the performance of traditional HJQD thin film solar cells model based on quantum dot absorber layer and bulk window layer. The new design has been used sub-micro absorber layer thickness to achieve high efficiency with material reduction, low cost, and time. Metallics-semiconductor core/shell absorber layer has been succeeded for improving the optical characteristics such energy band gap and the absorption of absorber layer materials, also enhancing the performance of HJQD ITO/CdS/QDPbS/Au, sub micro thin film solar cells. Finally, it has been formulating the quantum dot (QD) metallic cores concentration effect on the absorption, energy band gap and electron-hole generation rate in absorber layers, external quantum efficiency, energy conversion efficiency, fill factor of the innovative design of HJQD cells.</span>

Multiple Regression Model on Optical Properties of Tin Oxide Thin Film

2015 ◽  
Vol 1107 ◽  
pp. 520-525
Author(s):  
Fouziah Md.Yassin ◽  
Saturi Baco ◽  
Noraini Abdullah
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Band Gap ◽  
Multiple Regression ◽  
Tin Oxide ◽  
Energy Band ◽  
Oxide Thin Film ◽  
Transmission Spectra ◽  
Energy Band Gap

Tin Oxide (SnO2) thin film is one of the important transparent conducting oxides (TCOs) due to its electrical and optical transparency in visible light spectrum. This study presents the best model in estimating optical properties of tin oxide thin film which is performed using the absorption coefficient of the film. The annealing temperature is at 473 K prepared by radio frequency sputtering technique. Twelve multiple regression (MR) models with interactions are generated from three independent variables (transmission spectra, energy band gap and the wavelength of light). They are developed from data sets of 50. The best model M8.0.0 is chosen from the 6 selected models based on the Eight Selection Criterion (8SC). Best model will have the majority criteria with the least value. Factors affect the absorption coefficient are found to be X1(transmission spectra), X2(energy band gap) and X1X2(interaction between transmission spectra and energy band gap).

scholarly journals The effect of dopant material to optical properties: energy band gap Tin Oxide thin film

2021 ◽  
Vol 1816 (1) ◽  
pp. 012114
Author(s):  
A Doyan ◽  
Susilawati ◽  
L Muliyadi ◽  
S Hakim ◽  
H Munandar ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Band Gap ◽  
Tin Oxide ◽  
Energy Band ◽  
Oxide Thin Film ◽  
Energy Band Gap

scholarly journals No Resistive Normal Electrons in Beginning Superconducting States

Mathematics ◽  
2020 ◽  
Vol 8 (9) ◽  
pp. 1512
Author(s):  
Changho Seo ◽  
Seongsoo Cho ◽  
Je Huan Koo
Keyword(s):  
Band Gap ◽  
Energy Band ◽  
Energy Band Gap

We investigate why normal electrons in superconductors have no resistance. Under the same conditions, the band gap is reduced to zero as well, but normal electrons at superconducting states are condensed into this virtual energy band gap.

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