scholarly journals Structural, optical and electronic properties of Ni1−xCoxO in the complete composition range

RSC Advances ◽  
2020 ◽  
Vol 10 (71) ◽  
pp. 43497-43507
Author(s):  
Kiran Baraik ◽  
Ashok Bhakar ◽  
V. Srihari ◽  
Indranil Bhaumik ◽  
C. Mukherjee ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Conduction Band ◽  
Solid Solutions ◽  
Composition Range ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Optical Gap ◽  
Optical And Electronic Properties

The optical gap of Ni1−xCoxO solid solutions neither varies linearly with Co composition nor shows any bowing in the complete composition range. The nature of this variation of the gap is governed by the position of conduction band edge.

Long-time luminescence kinetics of localized excitons and conduction band edge smearing in ZnSe(1−c)Tec solid solutions

JETP Letters ◽  
2000 ◽  
Vol 72 (6) ◽  
pp. 320-323 ◽  
Author(s):  
A. Klochikhin ◽  
S. G. Ogloblin ◽  
S. Permogorov ◽  
A. Reznitsky ◽  
C. Klingshirn ◽  
...  
Keyword(s):  
Conduction Band ◽  
Solid Solutions ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Luminescence Kinetics ◽  
Long Time ◽  
Localized Excitons ◽  
Kinetics Of

scholarly journals The band-edge excitons observed in few-layer NiPS3

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Ching-Hwa Ho ◽  
Tien-Yao Hsu ◽  
Luthviyah Choirotul Muhimmah
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Lower Energy ◽  
Transition Energy ◽  
Threshold Energy ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Rydberg Series ◽  
Optical Gap ◽  
Energy Side

AbstractBand-edge excitons of few-layer nickel phosphorous trisulfide (NiPS3) are characterized via micro-thermal-modulated reflectance (μTR) measurements from 10 to 300 K. Prominent μTR features of the A exciton series and B are simultaneously detected near the band edge of NiPS3. The A exciton series contains two sharp A1 and A2 levels and one threshold-energy-related transition (direct gap, E∞), which are simultaneously detected at the lower energy side of NiPS3. In addition, one broadened B feature is present at the higher energy side of few-layer NiPS3. The A series excitons may correlate with majorly d-to-d transition in the Rydberg series with threshold energy of E∞ ≅ 1.511 eV at 10 K. The binding energy of A1 is about 36 meV, and the transition energy is A1 ≅ 1.366 eV at 300 K. The transition energy of B measured by μTR is about 1.894 eV at 10 K. The excitonic series A may directly transit from the top of valence band to the conduction band of NiPS3, while the B feature might originate from the spin-split-off valence band to the conduction band edge. The direct optical gap of NiPS3 is ~1.402 eV at 300 K, which is confirmed by μTR and transmittance experiments.

scholarly journals Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 822
Author(s):  
Hyo-Jun Joo ◽  
Dae-Hwan Kim ◽  
Hyun-Seok Cha ◽  
Sang-Hun Song
Keyword(s):  
Magnetic Field ◽  
Electron Density ◽  
Conduction Band ◽  
Electron System ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Offset Voltage ◽  
Three Samples ◽  
Dimensional Electron System ◽  
Longitudinal Distance

We measured and analyzed the Hall offset voltages in InGaZnO thin-film transistors. The Hall offset voltages were found to decrease monotonously as the electron densities increased. We attributed the magnitude of the offset voltage to the misalignment in the longitudinal distance between the probing points and the electron density to Fermi energy of the two-dimensional electron system, which was verified by the coincidence of the Hall voltage with the perpendicular magnetic field in the tilted magnetic field. From these results, we deduced the combined conduction band edge energy profiles from the Hall offset voltages with the electron density variations for three samples with different threshold voltages. The extracted combined conduction band edge varied by a few tens of meV over a longitudinal distance of a few tenths of µm. This result is in good agreement with the value obtained from the analysis of percolation conduction.

Size-Dependent Valence and Conduction Band-Edge Energies of Semiconductor Nanocrystals

ACS Nano ◽  
2011 ◽  
Vol 5 (7) ◽  
pp. 5888-5902 ◽  
Author(s):  
Jacek Jasieniak ◽  
Marco Califano ◽  
Scott E. Watkins
Keyword(s):  
Conduction Band ◽  
Semiconductor Nanocrystals ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Size Dependent

scholarly journals Photocatalytic properties of a new Z-scheme system BaTiO3/In2S3 with a core–shell structure

RSC Advances ◽  
2019 ◽  
Vol 9 (20) ◽  
pp. 11377-11384 ◽  
Author(s):  
Kaili Wei ◽  
Baolai Wang ◽  
Jiamin Hu ◽  
Fuming Chen ◽  
Qing Hao ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Valence Band ◽  
Conduction Band ◽  
Shell Structure ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Core Shell ◽  
Valence Band Edge ◽  
Core Shell Structure ◽  
Positive Valence

It's highly desired to design an effective Z-scheme photocatalyst with excellent charge transfer and separation, a more negative conduction band edge (ECB) than O2/·O2− (−0.33 eV) and a more positive valence band edge (EVB) than ·OH/OH− (+2.27 eV).

ALD Deposited Al2 O3 Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere

2005 ◽  
Vol 483-485 ◽  
pp. 559-562 ◽  
Author(s):  
Kun Yuan Gao ◽  
Thomas Seyller ◽  
Konstantin V. Emtsev ◽  
Lothar Ley ◽  
Florin Ciobanu ◽  
...  
Keyword(s):  
Conduction Band ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Atomic Layer ◽  
Hydrogen Atmosphere ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Strong Increase ◽  
Admittance Spectroscopy ◽  
Spectroscopy Measurement

Atomic Layer Deposited Al2O3 films on hydrogen-terminated 6H-SiC(0001) were annealed in hydrogen atmosphere and characterized by admittance spectroscopy measurement and photoelectron spectroscopy (PES). The resultant density of interface trap (Dit) from admittance spectroscopy measurement is reduced near mid gap, but increases strongly towards the conduction band edge. Systematic PES measurements show that hydrogen annealing introduces Si4+ as a new component besides Si0 and Si+. Using different electron escape depths for photon electrons, depth profiling of Si in its different oxidation states was performed. The result indicates the formation of a top SiO2 layer and a rougher interfacial layer containing more Si+ and Si4+ which could be responsible for the strong increase of Dit just below the conduction band edge.

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