scholarly journals Green thin film for stable electrical switching in a low-cost washable memory device: proof of concept

RSC Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 4327-4338
Author(s):  
Naila Arshad ◽  
Muhammad Sultan Irshad ◽  
Misbah Sehar Abbasi ◽  
Saif Ur Rehman ◽  
Iftikhar Ahmed ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Low Cost ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Proof Of Concept ◽  
Access Memory ◽  
Electrical Switching

Low-cost and washable resistive switching (RS) memory devices with stable retention and low operational voltage are important for resistive random-access memory (RRAM).

Sol-Gel Processed ZrO2 Based Forming-Free Resistive Switching Memory Devices

2022 ◽  
Vol 1048 ◽  
pp. 198-202
Author(s):  
K.M. Shafi ◽  
K. Muhammed Shibu ◽  
N.K. Sulfikarali ◽  
K.P. Biju
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Sol Gel ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Switching Behaviour

In this work, we fabricated ZrO2 based resistive random access memory by sol-gel spin coating technique and investigated its structural, optical and resistive switching properties. The X-ray diffraction pattern revealed that 400 °C annealed ZrO2 thin film has tetragonal structure. The optical band gap value of ZrO2 thin film obtained was 5.51 eV. The resistive switching behaviour of W/ZrO2/ITO capacitor like structure was studied. It was found that no initial electroforming process required for the device. The fabricated devices show a self-compliance bipolar resistive switching behaviour and have high on off ratio (>102). Our result suggests that solution processed ZrO2 has great potential to develop transparent and flexible resistive random access memory devices.

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