scholarly journals Bipolar Switching Properties of Bilayer V2O5/Sm2O3 Thin-film Resistive Random Access Memory Device Prepared by Sputtering Technology

2018 ◽  
pp. 933
RSC Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 4327-4338
Author(s):  
Naila Arshad ◽  
Muhammad Sultan Irshad ◽  
Misbah Sehar Abbasi ◽  
Saif Ur Rehman ◽  
Iftikhar Ahmed ◽  
...  

Low-cost and washable resistive switching (RS) memory devices with stable retention and low operational voltage are important for resistive random-access memory (RRAM).


2021 ◽  
Vol 12 (7) ◽  
pp. 1876-1884
Author(s):  
Mousam Charan Sahu ◽  
Sameer Kumar Mallik ◽  
Sandhyarani Sahoo ◽  
Sanjeev K. Gupta ◽  
Rajeev Ahuja ◽  
...  

2012 ◽  
Vol 213 (23) ◽  
pp. 2472-2478 ◽  
Author(s):  
Wenpeng Lin ◽  
Huibin Sun ◽  
Shujuan Liu ◽  
Huiran Yang ◽  
Shanghui Ye ◽  
...  

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