Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device
Keyword(s):
2018 ◽
Vol 51
(22)
◽
pp. 225102
◽
2017 ◽
Vol 57
(1)
◽
pp. 011501
◽
2019 ◽
Vol 40
(10)
◽
pp. 1599-1601
◽
Keyword(s):
2015 ◽
Vol 54
(6S1)
◽
pp. 06FH11
◽
2010 ◽
2018 ◽
Vol 57
(6S1)
◽
pp. 06HD06
◽
Keyword(s):