Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device

2013 ◽  
Vol 113 (16) ◽  
pp. 164507 ◽  
Author(s):  
Y. S. Chen ◽  
B. Chen ◽  
B. Gao ◽  
L. F. Liu ◽  
X. Y. Liu ◽  
...  
RSC Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 4327-4338
Author(s):  
Naila Arshad ◽  
Muhammad Sultan Irshad ◽  
Misbah Sehar Abbasi ◽  
Saif Ur Rehman ◽  
Iftikhar Ahmed ◽  
...  

Low-cost and washable resistive switching (RS) memory devices with stable retention and low operational voltage are important for resistive random-access memory (RRAM).


2008 ◽  
Vol 93 (22) ◽  
pp. 223505 ◽  
Author(s):  
Jung Won Seo ◽  
Jae-Woo Park ◽  
Keong Su Lim ◽  
Ji-Hwan Yang ◽  
Sang Jung Kang

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