scholarly journals Direct measurement of K+ ion efflux from neuronal cells using a graphene-based ion sensitive field effect transistor

RSC Advances ◽  
2020 ◽  
Vol 10 (62) ◽  
pp. 37728-37734
Author(s):  
Hongmei Li ◽  
Kenneth B Walsh ◽  
Ferhat Bayram ◽  
Goutam Koley
Keyword(s):  
Direct Measurement ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Neuronal Cells ◽  
High Sensitivity ◽  
Live Cells ◽  
Ion Efflux ◽  
Effect Transistor

A graphene-based ISFET has been developed and demonstrated high sensitivity and direct measurement of K+ ion efflux from live cells.

High-sensitivity detection of Concanavalin A using MoS2-based field effect transistor biosensor

2021 ◽  
Vol 54 (24) ◽  
pp. 245401
Author(s):  
Mingyang Ma ◽  
Lemeng Chao ◽  
Yuhang Zhao ◽  
Jiafeng Ding ◽  
Zhongchao Huang ◽  
...  
Keyword(s):  
Concanavalin A ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Sensitivity ◽  
Effect Transistor ◽  
High Sensitivity Detection ◽  
Sensitivity Detection

Real-time and selective detection of nitrates in water using graphene-based field-effect transistor sensors

2018 ◽  
Vol 5 (8) ◽  
pp. 1990-1999 ◽  
Author(s):  
Xiaoyan Chen ◽  
Haihui Pu ◽  
Zipeng Fu ◽  
Xiaoyu Sui ◽  
Jingbo Chang ◽  
...  
Keyword(s):  
Real Time ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Selectivity ◽  
High Sensitivity ◽  
Selective Detection ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Modified Graphene ◽  
Benzyltriethylammonium Chloride

A benzyltriethylammonium chloride-modified graphene field-effect transistor sensor has high sensitivity, high selectivity and rapid response for nitrate detection.

scholarly journals Comparison of Duplex and Quadruplex Folding Structure Adenosine Aptamers for Carbon Nanotube Field Effect Transistor Aptasensors

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2280
Author(s):  
Hong Phan T. Nguyen ◽  
Thanihaichelvan Murugathas ◽  
Natalie O. V. Plank
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Dissociation Constants ◽  
High Sensitivity ◽  
Quadruplex Structure ◽  
G Quadruplex ◽  
Effect Transistor ◽  
Folding Structure

Carbon nanotube field effect transistor (CNT FET) aptasensors have been investigated for the detection of adenosine using two different aptamer sequences, a 35-mer and a 27-mer. We found limits of detection for adenosine of 100 pM and 320 nM for the 35-mer and 27-mer aptamers, with dissociation constants of 1.2 nM and 160 nM, respectively. Upon analyte recognition the 35-mer adenosine aptamer adopts a compact G-quadruplex structure while the 27-mer adenosine aptamer changes to a folded duplex. Using the CNT FET aptasensor platform adenosine could be detected with high sensitivity over the range of 100 pM to 10 µM, highlighting the suitability of the CNT FET aptasensor platform for high performance adenosine detection. The aptamer restructuring format is critical for high sensitivity with the G-quadraplex aptasensor having a 130-fold smaller dissociation constant than the duplex forming aptasensor.

scholarly journals EGFET-Based Sensors for Bioanalytical Applications: A Review

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 4042 ◽  
Author(s):  
Salvatore Pullano ◽  
Costantino Critello ◽  
Ifana Mahbub ◽  
Nishat Tasneem ◽  
Samira Shamsir ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Cost ◽  
High Sensitivity ◽  
Nucleic Acid Hybridization ◽  
Protein Protein Interaction ◽  
Effect Transistor ◽  
Bioanalytical Applications ◽  
Antigen Antibody ◽  
Low Cost Manufacturing

Since the 1970s, a great deal of attention has been paid to the development of semiconductor-based biosensors because of the numerous advantages they offer, including high sensitivity, faster response time, miniaturization, and low-cost manufacturing for quick biospecific analysis with reusable features. Commercial biosensors have become highly desirable in the fields of medicine, food, and environmental monitoring as well as military applications, whereas increasing concerns about food safety and health issues have resulted in the introduction of novel legislative standards for these sensors. Numerous devices have been developed for monitoring biological processes such as nucleic acid hybridization, protein–protein interaction, antigen–antibody bonds, and substrate–enzyme reactions, just to name a few. Since the 1980s, scientific interest moved to the development of semiconductor-based devices, which also include integrated front-end electronics, such as the extended-gate field-effect transistor (EGFET) biosensor, one of the first miniaturized chemical sensors. This work is intended to be a review of the state of the art focused on the development of biosensors and chemosensors based on extended-gate field-effect transistor within the field of bioanalytical applications, which will highlight the most recent research reported in the literature. Moreover, a comparison among the diverse EGFET devices will be presented, giving particular attention to the materials and technologies.

High-Sensitivity Hydrogen Sensor Based on AlGaN/GaN Heterojunction Field-Effect Transistor

2020 ◽  
Vol 20 (7) ◽  
pp. 4404-4408
Author(s):  
June-Heang Choi ◽  
Tuan Anh Vuong ◽  
Hyungtak Kim ◽  
Ho-Young Cha
Keyword(s):  
Power Consumption ◽  
Barrier Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Sensitivity ◽  
Hydrogen Sensor ◽  
Hydrogen Gas ◽  
Algan Barrier ◽  
Algan Barrier Layer ◽  
Effect Transistor

We have developed a Pd-functionalized hydrogen gas sensor based on a recessed AlGaN/GaN heterostructure field-effect transistor. The AlGaN barrier layer under the Pd catalyst was partially etched to enhance its sensitivity. Both low-power consumption and high sensitivity were achieved by employing a recessed structure. Sensor characterization was carried out at the temperature range from room temperature to 250 °C, among which the best sensing characteristics were observed at 200 °C. A sensitivity of 380% with a response time of 0.25 s was achieved at a bias voltage of 0.3 V at 200 °C under a hydrogen exposure concentration of 4%. The standby power consumption was only 2 μW for the sensing area of 100×28 μm2 due to the low standby current, which was caused by the recessed AlGaN barrier layer.

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