scholarly journals Quantifying thermal transport in buried semiconductor nanostructures via Cross-Sectional Scanning Thermal Microscopy

Nanoscale ◽  
2021 ◽  
Author(s):  
Jean Spièce ◽  
Charalambos Evangeli ◽  
Alexander J. Robson ◽  
Alexandros El Sachat ◽  
Linda Haenel ◽  
...  
Keyword(s):  
Thermal Transport ◽  
Semiconductor Nanostructures ◽  
Scanning Thermal Microscopy ◽  
Thermoelectric Devices ◽  
Cross Sectional ◽  
Moore’S Law ◽  
Thermal Microscopy ◽  
Moore's Law ◽  
Speed Increase ◽  
Clock Speed

Managing thermal transport in nanostructures became a major challenge in development of active microelectronic, optoelectronic and thermoelectric devices, stalling the famous Moore’s law of clock speed increase of microprocessors for...

Native-oxide limited cross-plane thermal transport in suspended silicon membranes revealed by scanning thermal microscopy

2017 ◽  
Vol 111 (6) ◽  
pp. 063106 ◽  
Author(s):  
A. M. Massoud ◽  
J.-M. Bluet ◽  
V. Lacatena ◽  
M. Haras ◽  
J.-F. Robillard ◽  
...  
Keyword(s):  
Thermal Transport ◽  
Native Oxide ◽  
Scanning Thermal Microscopy ◽  
Thermal Microscopy ◽  
Silicon Membranes

scholarly journals Dimension- and shape-dependent thermal transport in nano-patterned thin films investigated by scanning thermal microscopy

2017 ◽  
Vol 28 (48) ◽  
pp. 485706 ◽  
Author(s):  
Yunfei Ge ◽  
Yuan Zhang ◽  
Jonathan M R Weaver ◽  
Phillip S Dobson
Keyword(s):  
Thin Films ◽  
Thermal Transport ◽  
Scanning Thermal Microscopy ◽  
Thermal Microscopy

Nanoscale Thermal Imaging of Thermionic Devices Using Scanning Thermal Microscopy

2001 ◽  
Author(s):  
Kwong-Luck Tan ◽  
Andrew Miner ◽  
Xiaofeng Fan ◽  
Chris LaBounty ◽  
Gehong Zheng ◽  
...  
Keyword(s):  
Temperature Measurement ◽  
Cross Section ◽  
Temperature Control ◽  
Thermal Imaging ◽  
Relative Size ◽  
Cooling Curves ◽  
Scanning Thermal Microscopy ◽  
Cross Sectional ◽  
Cooling Performance ◽  
Thermal Microscopy

Abstract Ever increasing importance of cooling and precise temperature control in microelectronics and optoelectronics has driven recent development of integrated thermoelectric and thermionic cooling structures. Previous studies have investigated SiGe/Si superlattice thermionic coolers experimentally using thermocouples that were 50 μm in diameter. However, the relative size of these thermocouples as compared to the devices sizes (30–100 μm) makes surface and cross-section temperature measurement of the SiGe/Si superlattice thermionic coolers not possible. In this work, a sub 100 nm probe was used to measure the surface and cross-sectional temperature of the SiGe/Si superlattice thermionic coolers using scanning thermal microscopy. Two sets of superlattice thermionic coolers were used in this study and their cooling curves (temperature vs current) are presented. Each set consists of six devices of different sizes. A comparison of device cooling performance is examined. A mechanism for studying thermionic cooling in the superlattice coolers is discussed through an analysis of the cooler cross-section temperature profile.

Chips with Everything

2017 ◽  
Author(s):  
David Segal
Keyword(s):  
Quantum Computing ◽  
Integrated Circuits ◽  
Critical Role ◽  
Moore’S Law ◽  
Moore's Law ◽  
Silicon Chips ◽  
History Of ◽  
Future Potential ◽  
Digital Computers ◽  
Dna Computer

Chapter 3 highlights the critical role materials have in the development of digital computers. It traces developments from the cat’s whisker to valves through to relays and transistors. Accounts are given for transistors and the manufacture of integrated circuits (silicon chips) by use of photolithography. Future potential computing techniques, namely quantum computing and the DNA computer, are covered. The history of computability and Moore’s Law are discussed.

scholarly journals Scanning Thermal Microscopy of Ultrathin Films: Numerical Studies Regarding Cantilever Displacement, Thermal Contact Areas, Heat Fluxes, and Heat Distribution

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 491
Author(s):  
Christoph Metzke ◽  
Fabian Kühnel ◽  
Jonas Weber ◽  
Günther Benstetter
Keyword(s):  
Thermal Properties ◽  
Ultrathin Films ◽  
Hexagonal Boron Nitride ◽  
Thermal Contact ◽  
Heat Transfer Process ◽  
Heat Propagation ◽  
Heat Fluxes ◽  
Detailed Knowledge ◽  
Scanning Thermal Microscopy ◽  
Thermal Microscopy

New micro- and nanoscale devices require electrically isolating materials with specific thermal properties. One option to characterize these thermal properties is the atomic force microscopy (AFM)-based scanning thermal microscopy (SThM) technique. It enables qualitative mapping of local thermal conductivities of ultrathin films. To fully understand and correctly interpret the results of practical SThM measurements, it is essential to have detailed knowledge about the heat transfer process between the probe and the sample. However, little can be found in the literature so far. Therefore, this work focuses on theoretical SThM studies of ultrathin films with anisotropic thermal properties such as hexagonal boron nitride (h-BN) and compares the results with a bulk silicon (Si) sample. Energy fluxes from the probe to the sample between 0.6 µW and 126.8 µW are found for different cases with a tip radius of approximately 300 nm. A present thermal interface resistance (TIR) between bulk Si and ultrathin h-BN on top can fully suppress a further heat penetration. The time until heat propagation within the sample is stationary is found to be below 1 µs, which may justify higher tip velocities in practical SThM investigations of up to 20 µms−1. It is also demonstrated that there is almost no influence of convection and radiation, whereas a possible TIR between probe and sample must be considered.

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