A high speed electrically switching reflective structural color display with large color gamut

Nanoscale ◽  
2021 ◽  
Author(s):  
Wenqiang Wang ◽  
Zhiqiang Guan ◽  
Hongxing Xu
Keyword(s):  
High Speed ◽  
Structural Color ◽  
Color Gamut ◽  
Switching Speed ◽  
Color Display

We theoretically designed a reflective structural color display pixel with high electrically switching speed (∼10 MHz) and large color gamut (157% sRGB).

Laser Silicon Interaction Study on Ring Oscillators to Establish Temperature Voltage Dependency Trends on 14 nm and Future FinFET Technologies

2017 ◽  
Author(s):  
Gaurav Mattey ◽  
Lava Ranganathan
Keyword(s):  
High Speed ◽  
Laser Frequency ◽  
Ring Oscillator ◽  
Switching Speed ◽  
Dual Nature ◽  
Voltage Imaging ◽  
Multiple Cores ◽  
Speed Performance ◽  
Self Test ◽  
Frequency Changes

Abstract Critical speed path analysis using Dynamic Laser Stimulation (DLS) technique has been an indispensable technology used in the Semiconductor IC industry for identifying process defects, design and layout issues that limit product speed performance. Primarily by injecting heat or injecting photocurrent in the active diffusion of the transistors, the laser either slows down or speeds up the switching speed of transistors, thereby affecting the overall speed performance of the chip and revealing the speed limiting/enhancing circuits. However, recently on Qualcomm Technologies’ 14nm FinFET technology SOC product, the 1340nm laser’s heating characteristic revealed a Vt (threshold voltage) improvement behavior at low operating voltages which helped identify process issues on multiple memory array blocks across multiple cores failing for MBIST (Memory Built-in Self-test). In this paper, we explore the innovative approach of using the laser to study Vt shifts in transistors due to process issues. We also study the laser silicon interactions through scanning the 1340nm thermal laser on silicon and observing frequency shifts in a high-speed Ring Oscillator (RO) on 16nm FinFET technology. This revealed the normal and reverse Temperature Dependency Gate voltages for 16nm FinFET, thereby illustrating the dual nature of stimulation (reducing mobility and improving Vt) from a thermal laser. Frequency mapping through Laser Voltage Imaging (LVI) was performed on the Ring Oscillator (RO) using the 1340nm thermal laser, while concurrently stimulating the transistors of the RO. Spatial distribution of stimulation was studied by observing the frequency changes on LVI.

The Dynamic Characteristics of Al Gate CuPc Thin Film Transistor

2014 ◽  
Vol 981 ◽  
pp. 830-833
Author(s):  
Ze Ying Wang ◽  
Dong Xing Wang ◽  
Yong Shuang Zhang ◽  
Yue Yue Wang ◽  
Jing Hua Yin ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Dynamic Characteristics ◽  
High Speed ◽  
High Current Density ◽  
Thin Film Transistor ◽  
Cutoff Frequency ◽  
Organic Thin Film ◽  
Switching Speed ◽  
Static And Dynamic Characteristics

We have fabricated Au/CuPc/Al/CuPc/Au organic thin film transistor (OTFTs) using vacuum deposition with CuPc thin films of stable chemical property and semi conductive Al gate thin film electrode. The static and dynamic characteristics were tested at room temperature. The test results show that the switching speed of the OTFT is ton=2.68ms, toff= 1.32ms, amplification bandwidth is 400Hz, and the cutoff frequency fc=400Hz when inputting 100Hz small square wave signal. Our OTFT has submicron conductive channel, shows operation characteristics of high frequency, high speed and high current density. Good static and dynamic characteristics of OTFT can be obtained by controlling appropriate Al gate film thickness and CuPc film thickness.

HIGH SPEED PHOTODETECTOR USING ACCELERATED PARTICLES CONTROLLED BY LIGHT

2012 ◽  
Vol 21 (02) ◽  
pp. 1250023
Author(s):  
S. UEAMANAPONG ◽  
I. SRITHANACHAI ◽  
S. NIEMCHAROEN ◽  
P. P. YUPAPIN
Keyword(s):  
Optical Tweezers ◽  
High Speed ◽  
Optical Tweezer ◽  
Performance Degradation ◽  
Fabrication Process ◽  
Switching Speed ◽  
Silicon Bulk ◽  
New Form ◽  
Accelerated Particles

In this paper, we propose a new design device that can be used to solve the performance degradation of a diode due to after-fabrication process problems which involves the silicon bulk defects. The optical tweezer technique has been used to control the movement of electrons, specifically an electron's speed using a PANDA ring. The PANDA microring is a new form of a modified add-drop filter that can be used to improve the switching speed of a diode by using the optical tweezers for trapping electrons' movement from anode contact to cathode contact. The trapping probe can be adjusted to fit for atom size of 200 pm (picometer) to 1.4 nm (nanometer) by controlling the ring parameters. The goal of this paper is to present the use of a PANDA microring for improving photodetector performance which can be used further for many applications.

Dynamic Structural Color Display Based on Femtosecond Laser Variable Polarization Processing

2021 ◽  
pp. 2100460
Author(s):  
Peichao Wu ◽  
Xiaowen Cao ◽  
Ling Zhao ◽  
Zhihao Chen ◽  
Mina Zhang ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Structural Color ◽  
Color Display

scholarly journals A Novel QCA based Compact Scan Flip-flop for Digital Design Testing

2019 ◽  
Vol 9 (1) ◽  
pp. 6681-6686 ◽  
Keyword(s):  
Energy Dissipation ◽  
Cell Count ◽  
High Speed ◽  
Minimum Energy ◽  
Cmos Technology ◽  
Digital Design ◽  
Switching Speed ◽  
Flip Flop ◽  
A Cell ◽  
Simulation Engines

Quantum-dot Cellular Automata (QCA) is an emerging technology used for computation at nano scale. It is an excellent alternative for the conventional CMOS technology. QCA provides us with low energy, high speed, faster switching speed and compact structures for logical circuits. Testing is the integral part of the design verification, scan flip-flop is used for device testing. It is used in processors for a built-in self-test. The objective of this paper is to design an optimized structure of a scan flip-flop which occupies less area and dissipates minimum energy compared to the previously designed architectures. The efficiency of the proposed structure is analyzed in terms of cell count, energy dissipation, and area occupied by the logical circuit. Proposed scan flip flop has a cell count of 32 and an energy dissipation of 0.0105 eV which is 20 % more efficient in terms of cell count and 29 % more efficient than the previous designs. The CAD tool, QCADesigner is used for design and simulation. Cells have a dimension of 18 nm in height and 18 nm in breadth and there is a distance of 2 nm between these cells. Bi-stable and coherence vector simulation engines are used in the tool for simulation.

An engineering model for high-speed switching in GeSbTe phase-change memory

2022 ◽  
Author(s):  
Junji TOMINAGA
Keyword(s):  
Phase Change ◽  
High Speed ◽  
High Performance ◽  
Ab Initio Molecular Dynamics ◽  
Switching Speed ◽  
Non Volatile Memory ◽  
Crystal Transition ◽  
Dynamics Simulations ◽  
High Speed Switching ◽  
Successful Phase

Abstract Ge2Sb2Te5 is the most successful phase-change alloy in non-volatile memory using the amorphous-crystal phase transition. In deriving further high performance in switching, especially SET speed (from amorphous to crystal transition) should still be modified. In this work, It was examined an ideal Ge2Sb2Te5 alloy based on the Kolobov model using ab-initio molecular dynamics simulations. As a result, it was cleared that a uniaxial exchange between vacancies and Ge atoms is the crucial role in realizing high-speed switching and a large contrast in the resonance bonding state in the alloy. The vacancy engineering enables the alloy switching speed extremely faster.

Structure Optimization on High-Speed Electromagnetic Repulsion Mechanism

2014 ◽  
Vol 532 ◽  
pp. 611-615
Author(s):  
En Yuan Dong ◽  
Mei Wei Liu ◽  
Zhi Bing Li ◽  
Xiang Lian Yan ◽  
Yu Shuo Chen
Keyword(s):  
Power Systems ◽  
High Speed ◽  
Structure Optimization ◽  
Magnetic Actuator ◽  
Switching Speed ◽  
Element Analysis ◽  
Fast Switching ◽  
The Core ◽  
Permanent Magnetic Actuator ◽  
Capacitance Voltage

High speed mechanical switches are gradually becoming a research hotspot in power systems, for its fast switching speed, large conduction flow and voltage-withstanding. Among them, the core design of the switches focuses on optimal design of the structure of repulsion actuator. Besides traditional factors like coil turns, capacitance, voltage, which affect the output power, the material and structure of coil frame, the enclosure of repulsion mechanism are found to be important factors in this paper. Based on finite element analysis and simulation of repulsion mechanism, a novel prototype was designed, and the simulation results were verified by experiments. Moreover, during opening process of switch, the repulsion mechanism coupled with either assistant spring or assistant opening coil in permanent magnetic actuator (PMA) are compared by experiments. The results show that the switch has smaller opening oscillation and simpler structure through using assistant opening coil. This paper has provided a better guidance for the development of high-speed repulsion mechanism in interrupters.

Impacts of using wide bandgap transistors on electronics and motors

2020 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Mathieu Gerber ◽  
Guillaume Callerant ◽  
Christophe Espanet ◽  
Farid Meibody-Tabar ◽  
Noureddine Takorabet
Keyword(s):  
High Frequency ◽  
High Speed ◽  
Wide Bandgap ◽  
Switching Frequency ◽  
Switching Speed ◽  
Content Type ◽  
Parasitic Element ◽  
Fast Switching ◽  
Electronic Model ◽  
The Impact

Purpose The purpose of this paper is to study the high-frequency impacts of fast switching wide-bandgap transistors on electronic and motor designs. The high-frequency power converters, dedicated to driving high-speed motors, require specific models to design predictively electronic and motors. Design/methodology/approach From magnetic and electric models, the high-frequency parasitic elements for both electronics and motor are determined. Then, high-frequency circuit models accounting for of parasitic element extractions are built to study the wide bandgap transistors commutations and their impacts on motor windings. Findings The results of the models, for electronics and motors, are promising. The high-frequency commutation cell study is used to optimize the layouts and to improve the commutation behaviours and performances. The impact of the switching speed is highlighted on the winding voltage susceptibility. Then, the switching frequency and commutation rapidity can be both optimized to increase the performance of motor and electronics. The electronic model is validated by experimentations. Research limitations/implications The method can be only applied to the existing motor and electronic designs. It is not taken into account in an automized global high-frequency optimizer. Originality/value Helped by magnetic and electric FEA calculations where the parasitic element extractions are performed. The switching frequency and commutation rapidity can be both optimized to increase the performance of motor and electronics.

scholarly journals Scalable Fabrication and Testing Processes for Three-Layer Multi-Color Segmented Electrowetting Display

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 341 ◽  
Author(s):  
Guisong Yang ◽  
Biao Tang ◽  
Dong Yuan ◽  
Alex Henzen ◽  
Guofu Zhou
Keyword(s):  
Contrast Ratio ◽  
High Volume ◽  
Driving Voltage ◽  
Optical Performance ◽  
Color Gamut ◽  
Switching Speed ◽  
Aperture Ratio ◽  
Full Color ◽  
Three Layer Architecture ◽  
Full Investigation

Colorful electrowetting displays (EWD) present many challenges, such as scalability and electro-optical performance improvement (e.g., brightness, color gamut, and contrast ratio). The first full investigation of scalable fabrication and testing processes for multi-color segmented EWD with potentially unprecedented electro-optical performance is proposed. A three-layer architecture is employed to achieve colorful EWD, where the key components are three primary color layers (cyan, magenta, and yellow), switched independently. Unlike previous reports referred to herein, which used the same fabrication and testing processes for each layer, this architecture facilitates a uniform performance, improves yield, and simplifies the process for colorful EWD. With an aperture ratio greater than 80%, National Television Standards Committee (NTSC) color gamut area greater than 63%, switching speed lower than 12 ms, and DC driving voltage below 22V, the testing results of colorful EWD are proven successfully by using our proposed processes. The processes investigated in this paper have greatly improved efficiency, suitable for a high-volume of full-color EWD.

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