scholarly journals Enhanced carrier transport by transition metal doping in WS2 field effect transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (33) ◽  
pp. 17253-17264 ◽  
Author(s):  
Maomao Liu ◽  
Sichen Wei ◽  
Simran Shahi ◽  
Hemendra Nath Jaiswal ◽  
Paolo Paletti ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
Contact Condition ◽  
Transition Metal Doping ◽  
Two Dimensional ◽  
Metal Doping

Both generalized atomic doping and localized contact decoration using transition metal, Cu, can significantly improve the contact condition and enhance the carrier transport of two-dimensional semiconductors.

First principles studies on electronic and contact properties of Single layer 2H-MoS2/1T'-MX2 heterojunctions

2022 ◽  
Author(s):  
Jiao Yu ◽  
Caijuan Xia ◽  
Zhengyang Hu ◽  
jianping Sun ◽  
Xiaopeng Hao ◽  
...  
Keyword(s):  
Transition Metal ◽  
First Principles ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Layer ◽  
Metal Chalcogenides ◽  
Two Dimensional ◽  
Transition Metal Chalcogenides

With in-plane heterojunction contacts between semiconducting 2H phase (as channel) and the metallic 1T' phase (as electrode), the two-dimensional (2D) transition metal chalcogenides (TMDs) field-effect transistors (FETs) have received much...

scholarly journals Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

2013 ◽  
Vol 103 (5) ◽  
pp. 053513 ◽  
Author(s):  
Cheng Gong ◽  
Hengji Zhang ◽  
Weihua Wang ◽  
Luigi Colombo ◽  
Robert M. Wallace ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Band Alignment ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Two-dimensional nanomaterial-based field-effect transistors for chemical and biological sensing

2017 ◽  
Vol 46 (22) ◽  
pp. 6872-6904 ◽  
Author(s):  
Shun Mao ◽  
Jingbo Chang ◽  
Haihui Pu ◽  
Ganhua Lu ◽  
Qiyuan He ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Recent Progress ◽  
Field Effect Transistors ◽  
Black Phosphorus ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Biological Sensing ◽  
Water Contaminants

This review highlights the recent progress in graphene-, 2D transition metal dichalcogenide-, and 2D black phosphorus-based FET sensors for detecting gases, biomolecules, and water contaminants.

scholarly journals Air Pressure, Gas Exposure and Electron Beam Irradiation of 2D Transition Metal Dichalcogenides

2020 ◽  
Vol 10 (17) ◽  
pp. 5840
Author(s):  
Antonio Di Bartolomeo ◽  
Aniello Pelella ◽  
Alessandro Grillo ◽  
Francesca Urban ◽  
Filippo Giubileo
Keyword(s):  
Electron Beam ◽  
Transition Metal ◽  
Transport Properties ◽  
Field Effect ◽  
Electron Beam Irradiation ◽  
Field Effect Transistors ◽  
Gas Absorption ◽  
Two Dimensional ◽  
Beam Irradiation ◽  
Type Conduction

In this study, we investigate the electrical transport properties of back-gated field-effect transistors in which the channel is realized with two-dimensional transition metal dichalcogenide nanosheets, namely palladium diselenide (PdSe2) and molybdenum disulfide (MoS2). The effects of the environment (pressure, gas type, electron beam irradiation) on the electrical properties are the subject of an intense experimental study that evidences how PdSe2-based devices can be reversibly tuned from a predominantly n-type conduction (under high vacuum) to a p-type conduction (at atmospheric pressure) by simply modifying the pressure. Similarly, we report that, in MoS2-based devices, the transport properties are affected by pressure and gas type. In particular, the observed hysteresis in the transfer characteristics is explained in terms of gas absorption on the MoS2 surface due to the presence of a large number of defects. Moreover, we demonstrate the monotonic (increasing) dependence of the width of the hysteresis on decreasing the gas adsorption energy. We also report the effects of electron beam irradiation on the transport properties of two-dimensional field-effect transistors, showing that low fluences of the order of few e-/nm2 are sufficient to cause appreciable modifications to the transport characteristics. Finally, we profit from our experimental setup, realized inside a scanning electron microscope and equipped with piezo-driven nanoprobes, to perform a field emission characterization of PdSe2 and MoS2 nanosheets at cathode–anode separation distances as small as 200 nm.

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