Two-dimensional nanomaterial-based field-effect transistors for chemical and biological sensing

2017 ◽  
Vol 46 (22) ◽  
pp. 6872-6904 ◽  
Author(s):  
Shun Mao ◽  
Jingbo Chang ◽  
Haihui Pu ◽  
Ganhua Lu ◽  
Qiyuan He ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Recent Progress ◽  
Field Effect Transistors ◽  
Black Phosphorus ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Biological Sensing ◽  
Water Contaminants

This review highlights the recent progress in graphene-, 2D transition metal dichalcogenide-, and 2D black phosphorus-based FET sensors for detecting gases, biomolecules, and water contaminants.

First principles studies on electronic and contact properties of Single layer 2H-MoS2/1T'-MX2 heterojunctions

2022 ◽  
Author(s):  
Jiao Yu ◽  
Caijuan Xia ◽  
Zhengyang Hu ◽  
jianping Sun ◽  
Xiaopeng Hao ◽  
...  
Keyword(s):  
Transition Metal ◽  
First Principles ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Layer ◽  
Metal Chalcogenides ◽  
Two Dimensional ◽  
Transition Metal Chalcogenides

With in-plane heterojunction contacts between semiconducting 2H phase (as channel) and the metallic 1T' phase (as electrode), the two-dimensional (2D) transition metal chalcogenides (TMDs) field-effect transistors (FETs) have received much...

Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 8883-8889 ◽  
Author(s):  
Ronen Dagan ◽  
Yonatan Vaknin ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Surface ◽  
Volume Ratio ◽  
Transition Metal Dichalcogenide ◽  
State Distribution ◽  
Fermi Level Pinning ◽  
Gap States

Gap states and Fermi level pinning play an important role in all semiconductor devices, but even more in transition metal dichalcogenide-based devices due to their high surface to volume ratio and the absence of intralayer dangling bonds.

scholarly journals Enhanced carrier transport by transition metal doping in WS2 field effect transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (33) ◽  
pp. 17253-17264 ◽  
Author(s):  
Maomao Liu ◽  
Sichen Wei ◽  
Simran Shahi ◽  
Hemendra Nath Jaiswal ◽  
Paolo Paletti ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
Contact Condition ◽  
Transition Metal Doping ◽  
Two Dimensional ◽  
Metal Doping

Both generalized atomic doping and localized contact decoration using transition metal, Cu, can significantly improve the contact condition and enhance the carrier transport of two-dimensional semiconductors.

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