Passivation-driven speciation, dealloying and purification

2021 ◽  
Author(s):  
Andrew Martin ◽  
Boyce Chang ◽  
Joel Cutinho ◽  
Liyang Shen ◽  
Thomas Ward ◽  
...  

Kinetics of passivating oxide growth can drive nanoscale surface order/speciation. Combined with oxide growth and thermal expansion, trapped oxide crystals (‘ship-in-a-bottle’) or extrusion of metal fingerlings (‘spiky particles’) can be achieved.

1992 ◽  
Vol 139 (9) ◽  
pp. L82-L83 ◽  
Author(s):  
A. Philipossian ◽  
D. B. Jackson
Keyword(s):  

2008 ◽  
Vol 163 (8) ◽  
pp. 713-727 ◽  
Author(s):  
S. B. Ubizskii ◽  
O. A. Buryy ◽  
P. Potera

2018 ◽  
Vol 2018 ◽  
pp. 1-19 ◽  
Author(s):  
J. J. Ramos-Hernandez ◽  
J. Porcayo-Calderon ◽  
J. G. Gonzalez-Rodriguez ◽  
Jan Mayén ◽  
G. Lara-Rodriguez ◽  
...  

This paper discusses the effect of the addition of noble metals on the microstructure, mechanism, and oxidation kinetics of the Ni3Al intermetallic alloy. Ni3Al was doped with 1% (atomic percent) of Au, Ag, Pd, and Pt. Oxidation behavior of the alloys was evaluated at 900, 1000, and 1100°C in O2 for 24 hours. XRD analysis showed that the addition of noble metals favored the oxide growth on preferential crystallographic planes. In addition, the preferential substitution of the noble metals in the Ni3Al structure modifies the surface composition by increasing the Al/Ni ratio. It was observed that most of the alloys showed a subparabolic behavior, and only the intermetallic base and the alloy doped with Ag show a parabolic behavior at 900°C. The developed oxides were analyzed both superficially and in cross section by scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDXA). It was evident that only the intermetallic base showed the formation of a duplex oxide scale (Al2O3/NiO). The alloys doped with noble metals showed the oxide growth practically of pure Al2O3. This was due to a decrease in the diffusion of the Ni cations because of the presence of the noble metals in the crystalline structure.


1975 ◽  
Vol 31 (2) ◽  
pp. 331-338 ◽  
Author(s):  
M. G. C. Cox ◽  
B. Mcenaney ◽  
V. D. Scott

1987 ◽  
Vol 92 ◽  
Author(s):  
J. Nulman

ABSTRACTThe in-situ processing of silicon dielectrics by rapid thermal processing (RTP) is described. RTP includes here three basic sequentially performed processes: wafer cleaning, oxidation and annealing. The insitu cleaning allows for reduction of chemical and native oxides and silicon surface chemical polish, resulting in interface density of states as low as 5×l09 cm-2eV-1. Kinetics of oxide growth indicates an activation energy of 1.4 eV for the initial linear oxidation rate.


1983 ◽  
Vol 36 (4) ◽  
pp. 553 ◽  
Author(s):  
TR Finlayson

For a number of materials which exhibit a change of structure on being cooled below a certain temperature Tm, some physical properties display anomalous behaviour at temperatures above Tm. The particular structural transformations in mind have been broadly classified as 'martensitic' and the anomalous physical properties as 'precursive phenomena'. Some debate exists regarding the role of the precursive phenomenon in the kinetics of the structural transformation. The most direct evidence for 'martensite precursors' is obtained from electron diffraction, although various indirect evidence is contained in X-ray, neutron and y-ray diffraction and various physical properties, for example, elastic constants and thermal expansion. In this paper current understanding of 'martensite precursors' is reviewed and examples of data from the A15 structure compounds V 3Si and Nb3Sn,. In-TI and TiNi alloys are discussed.


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